Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application

Abstract

To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeOx/TiOy/TaN RRAM shows a large resistance window of >10(2), 85 degrees C retention, a high-resistance-state (HRS) activation energy (E-a) of 0.52 eV, and a good DC cycling of 10(3) cycles, which are significantly better than those of a Ni/AlOx/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx. (C) 2014 The Japan Society of Applied Physics