Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application
| dc.citation.epage | en_US | |
| dc.citation.issue | 6 | en_US |
| dc.citation.volume | 53 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chou, Kun-I | en_US |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:36:20Z | |
| dc.date.available | 2014-12-08T15:36:20Z | |
| dc.date.issued | 2014-06-01 | en_US |
| dc.description.abstract | To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeOx/TiOy/TaN RRAM shows a large resistance window of >10(2), 85 degrees C retention, a high-resistance-state (HRS) activation energy (E-a) of 0.52 eV, and a good DC cycling of 10(3) cycles, which are significantly better than those of a Ni/AlOx/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx. (C) 2014 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/JJAP.53.061502 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.53.061502 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/24665 | |
| dc.identifier.wosnumber | WOS:000338104600015 | |
| dc.language.iso | en_US | en_US |
| dc.title | Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application | en_US |
| dc.type | Article | en_US |