Browsing by Author "Hsiao, C. N."

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High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric
(2008)
Cheng, C. H.
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Pan, H. C.
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Lin, S. H.
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Hsu, H. H.
;
Hsiao, C. N.
We have fabricated high-kappa Ni/TiZrO/TaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3x10(-8) A/cm(2) at -1 V was obtained for a 18 fF/mu m(2) capacitance density. For a 5.5 fF/mu m(2) capacitance density device, a small voltage coefficient of capacitance alpha of 105 ppm/V(2) and temperature coefficient of capacitance of 156 ppm/degrees C were measured. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2993977] All rights reserved.
Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode
(2007-12-01)
Cheng, C. H.
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Pan, H. C.
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Yang, H. J.
;
Hsiao, C. N.
;
Chou, C. P.
We have fabricated high-kappa. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 x 10(-7) A/cm(2) was obtained at 125 degrees C for 24-fF/mu m(2) density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.
Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode
(2008-10-01)
Cheng, C. H.
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Pan, H. C.
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Huang, C. C.
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Chou, C. P.
;
Hsiao, C. N.
We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 x 10(-6) A/cm(2) (at -1 V) at a 28 fF/mu m(2) capacitance density.
Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors
(2007)
Chiang, K. C.
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Huang, C. C.
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Pan, H. C.
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Hsiao, C. N.
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Lin, J. W.
An unavoidable drawback when using high-kappa dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high-kappa TiHfO capacitors. This avoids sacrificing the overall kappa value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits. (c) 2007 The Electrochemical Society.
Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors
(2007-08-01)
Chiang, K. C.
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Cheng, C. H.
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Jhou, K. Y.
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Pan, H. C.
;
Hsiao, C. N.
We have studied the stress reliability of low-energy-bandgap high-kappa. SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (Delta C/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.
Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications
(2007)
Chiang, K. C.
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Lin, J. W.
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Pan, H. C.
;
Hsiao, C. N.
;
Chen, W. J.
We demonstrate a high-performance TaN/SrTiO3/TaN metal-insulator- metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fF/mu m(2), small voltage linearity alpha of 54 ppm/V-2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits. (c) 2007 The Electrochemical Society.