Browsing by Author "Hsu, Ching-Hui"

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Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications
(1970-01-01)
Fan, Yang-Shun
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Liu, Po-Tsun
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Teng, Li-Feng
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Hsu, Ching-Hui
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光電工程學系
"Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 104 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742737]"
Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility
(2012)
Fan, Yang-Shun
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Hsu, Ching-Hui
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Chang, Chih-Hsiang
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Huang, Wei-Hsun
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Yu, Ming-Chang
The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.
Indium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass Application
(2011)
Fan, Yang-Shun
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Hsu, Ching-Hui
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Teng, Li-Feng
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Yu, Ming-Chang
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Liu, Po-Tsun
A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.
Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability
(2013-12-31)
Fan, Yang-Shun
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Liu, Po-Tsun
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Hsu, Ching-Hui
;
光電工程學系
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顯示科技研究所
Recently, non-volatile memory (NVM) has been widely used in electronic devices. Nowadays, the prevailing NVM is Flash memory. However, it is generally believed that the conventional Flash memory will approach its scaling limit within about a decade. The resistive random access memory (RRAM) is emerging as one of the potential candidates for future memory replacement because of its high storage density, low power consumption as well as simple structure. The purpose of this work is to develop a reliable a-InGaZnO based resistive switching memory. We investigate the resistive switching characteristics of TiN/Ti/IGZO/Pt structure and TiN/IGZO/Pt structure. The device with TiN/Ti/IGZO/Pt structure exhibits stable bipolar resistive switching. The impact of inserting a Ti interlayer is studied by material analyses. The device shows excellent resistive switching properties. For example, the DC sweep endurance can achieve over 1000 times; and the pulse induced switching cycles can reach at least 10,000 times. Furthermore, the impact of different sputtering ambience, the variable temperature measurement, and the conduction mechanisms are also investigated. According to our experiments, we propose a model to explain the resistive switching phenomenon observed in our devices. (C) 2013 Elsevier B. V. All rights reserved.
Multilevel resistive switching memory with amorphous InGaZnO-based thin film
(2013-02-11)
Hsu, Ching-Hui
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Fan, Yang-Shun
;
Liu, Po-Tsun
;
光電工程學系
;
顯示科技研究所
Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792316]