Indium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass Application

Abstract

A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.