Indium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass Application
| dc.citation.epage | 577 | en_US |
| dc.citation.spage | 575 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Fan, Yang-Shun | en_US |
| dc.contributor.author | Hsu, Ching-Hui | en_US |
| dc.contributor.author | Teng, Li-Feng | en_US |
| dc.contributor.author | Yu, Ming-Chang | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2017-04-21T06:48:28Z | |
| dc.date.available | 2017-04-21T06:48:28Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application. | en_US |
| dc.identifier.issn | 1883-2490 | en_US |
| dc.identifier.journal | IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135537 | |
| dc.identifier.wosnumber | WOS:000393147800143 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Indium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass Application | en_US |
| dc.type | Proceedings Paper | en_US |
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