Indium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass Application

標題:	Indium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass Application
作者:	Fan, Yang-Shun Hsu, Ching-Hui Teng, Li-Feng Yu, Ming-Chang Liu, Po-Tsun 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
公開日期:	2011
摘要:	A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.
URI:	http://hdl.handle.net/11536/135537
ISSN:	1883-2490
期刊:	IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
起始頁:	575
結束頁:	577
Appears in Collections:	Conferences Paper