標題: Indium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass Application
作者: Fan, Yang-Shun
Hsu, Ching-Hui
Teng, Li-Feng
Yu, Ming-Chang
Liu, Po-Tsun
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 2011
摘要: A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.
URI: http://hdl.handle.net/11536/135537
ISSN: 1883-2490
期刊: IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
起始頁: 575
結束頁: 577
顯示於類別:會議論文