標題: | Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory |
作者: | Singh, Pragya Simanjuntak, Firman Mangasa Kumar, Amit Tseng, Tseung-Yuen 電子工程學系及電子研究所 電機工程學系 Department of Electronics Engineering and Institute of Electronics Department of Electrical and Computer Engineering |
關鍵字: | Resistive switching;Nanorods;Gallium;Zinc oxide;Conductive-bridge random-access memory;Chemical solution deposition |
公開日期: | 30-八月-2018 |
摘要: | The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 10(4) s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. |
URI: | http://dx.doi.org/10.1016/j.tsf.2018.03.027 http://hdl.handle.net/11536/147983 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2018.03.027 |
期刊: | THIN SOLID FILMS |
Volume: | 660 |
起始頁: | 828 |
結束頁: | 833 |
顯示於類別: | 期刊論文 |