1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorFan, Yang-Shunen_US
dc.contributor.authorHsu, Ching-Huien_US
dc.contributor.authorTeng, Li-Fengen_US
dc.contributor.authorYu, Ming-Changen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.date.accessioned2017-04-21T06:48:28Z-
dc.date.available2017-04-21T06:48:28Z-
dc.date.issued2011en_US
dc.identifier.issn1883-2490en_US
dc.identifier.urihttp://hdl.handle.net/11536/135537-
dc.description.abstractA new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.en_US
dc.language.isoen_USen_US
dc.titleIndium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3en_US
dc.citation.spage575en_US
dc.citation.epage577en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000393147800143en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


Related Contents
Loading...