Browsing by Author "Hu, HH"

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Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
(2005-06-01)
Chen, KM
;
Hu, HH
;
Huang, GW
;
Chang, CY
;
電子工程學系及電子研究所
In this study, we determined the effects of hot-carrier stress on the low-frequency noise characteristics of partially depleted metal-oxide-semi conductor field-effect transistors (MOSFETs) in silicon-on-insulator (SOI) technology. In devices with a floating-body configuration, kink-related excess noise was observed due to the floating-body effect. The level of this excess noise decreased after normal-mode stress, while it was masked by 1/f noise after reverse-mode stress. The effects of stress-generated interface traps on the drain-to-body leakage current and the floating-body effect were also determined and used to explain the noise behavior. Moreover, the stress-induced 1/f noise degradation in floating-body devices and body-contact devices was studied. It was found that the 1/f degradation of body-contact devices is more significant than that of floating-body devices after hot-carrier stress.
Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperatures
(2004-04-01)
Chen, KM
;
Hu, HH
;
Huang, GW
;
Yeh, WK
;
Chang, CY
The low-frequency noise characteristics of partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) in silicon-on-insulator technology at various temperatures were investigated. For floating-body devices, a Lorentzian-like noise overshoot is observed due to the floating-body effect. The noise overshoot is dependent on temperature and bias, and can be reduced using a source-to-body-connected structure. At high temperature or high drain bias, the 1/f noise will be observed, and it is temperature-independent due to the trap-induced mobility fluctuation in the channel.