Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress

Abstract

In this study, we determined the effects of hot-carrier stress on the low-frequency noise characteristics of partially depleted metal-oxide-semi conductor field-effect transistors (MOSFETs) in silicon-on-insulator (SOI) technology. In devices with a floating-body configuration, kink-related excess noise was observed due to the floating-body effect. The level of this excess noise decreased after normal-mode stress, while it was masked by 1/f noise after reverse-mode stress. The effects of stress-generated interface traps on the drain-to-body leakage current and the floating-body effect were also determined and used to explain the noise behavior. Moreover, the stress-induced 1/f noise degradation in floating-body devices and body-contact devices was studied. It was found that the 1/f degradation of body-contact devices is more significant than that of floating-body devices after hot-carrier stress.