Browsing by Author "Huang, CM"

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A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
(1999)
Zous, NK
;
Wang, TH
;
Yeh, CC
;
Tsai, CW
;
Huang, CM
The mechanisms and transient characteristics of hot hole stress and FN stress induced excess leakage currents in tunnel oxides are investigated. Hot hole SILC is found to have a more pronounced transient effect. The transient is attributed to positive oxide charge detrapping and thus annihilation of positive charge-assisted tunneling current. The positive charge assisted tunneling current can be annealed by substrate hot electron injection. The DC and transient components in FN SILC are also discussed.
A multiplierless reconfigurable resizer for multi-window image display
(1997-01-01)
Huang, CM
;
Chang, TS
;
Jen, CW
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper presents a real-time resizing IC that can dynamically reconfigure the multiplierless polyphase CIC (cascaded-integer-comb) filter modules to meet even non-integer resizing ratio. The IC can process four 320x200 30 frames/sec at 55 Mhz clock.
A multiplierless reconfigurable resizer for multi-window image display
(1997-08-01)
Huang, CM
;
Chang, TS
;
Jen, CW
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper presents a real-time resizing IC that can dynamically reconfigure the multiplierless polyphase CIC (cascaded-integer-comb) filter modules to meet even noninteger resizing ratio. The hardware cost is greatly reduced by using overlap-save based block input and concurrent register reset scheme. The simulated results show that this chip can process four 320x200 30 frames/sec at 55 MHz clock.
Adaptive sliding-mode torque control of a PM synchronous motor
(2002-05-01)
Fang, CH
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Huang, CM
;
Lin, SK
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電控工程研究所
;
Institute of Electrical and Control Engineering
An adaptive sliding-mode torque control system, which incorporates the merits of both the sliding-mode control and the adaptive algorithm, is proposed. The sliding-mode controller is constructed by two integral surface functions. The uncertainty is formulated as a random variable around a constant mean, so that an adaptive mechanism is used to estimate the constant mean and the bound of the random variable. Moreover, an application of the proposed torque control to the position control of a motor is also presented. Some experiments verify the control theory and demonstrate the usefulness of the proposed control scheme.
Amino acid coupling patterns in thermophilic proteins
(2005-04-01)
Liang, HK
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Huang, CM
;
Ko, MT
;
Hwang, JK
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生物資訊及系統生物研究所
Structural analysis is useful in elucidating structural features responsible for enhanced thermal stability of proteins. However, due to the rapid increase of sequenced genomic data, there are far more protein sequences than the corresponding three-dimensional (3D) structures. The usual sequence-based amino acid composition analysis provides useful but simplified clues about the amino acid types related to thermal stability of proteins. In this work, we developed a statistical approach to identify the significant amino acid coupling sequence patterns in thermophilic proteins. The amino acid coupling sequence pattern is defined as any 2 types of amino acids separated by I or more amino acids. Using this approach, we construct the p profiles for the coupling patterns. The p value gives a measure of the relative occurrence of a coupling pattern in thermophiles compared with mesophiles. We found that thermophiles and mesophiles exhibit significant bias in their amino acid coupling patterns. We showed that such bias is mainly due to temperature adaptation instead of species or GC content variations. Though no single outstanding coupling pattern can adequately account for protein thermostability, we can use a group of amino acid coupling patterns having strong statistical significance (p values < 10(-7)) to distinguish between thermophilic and mesophilic proteins. We found a good correlation between the optimal growth temperatures of the genomes and the occurrences of the coupling patterns (the correlation coefficient is 0.89). Furthermore, we can separate the thermophilic proteins from their mesophilic orthologs using the amino acid coupling patterns. These results may be useful in the study of the enhanced stability of proteins from thermophiles - especially when structural information is scarce. (C) 2005 Wiley-Liss, Inc.
An investigation of Taiwanese early adolescents' views about the nature of science
(2005-09-01)
Huang, CM
;
Tsai, CC
;
Chang, CY
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教育研究所
;
師資培育中心
This study developed a Pupils' Nature of Science Scale, including the subscales of the invented and changing nature of science, the role of social negotiation on science, and cultural context on science, to assess early adolescents' views about the nature of science. More than 6,000 fifth and sixth graders in Taiwan responded to the Scale. The study revealed that the adolescents had quite different perspectives toward different subscales of the nature of science. Moreover, male adolescents tended to express more constructivist-oriented views toward the nature of science than did their female counterparts. The adolescents of different grades and races also displayed varying views toward the nature of science.
Charge-orbital ordering and verwey transition in magnetite measured by resonant soft X-ray scattering
(2006-03-10)
Huang, DJ
;
Lin, HJ
;
Okamoto, J
;
Chao, KS
;
Jeng, HT
We report experimental evidence for the charge-orbital ordering in magnetite below the Verwey transition temperature T-V. Measurements of O K-edge resonant x-ray scattering on magnetite reveal that the O 2p states in the vicinity of the Fermi level exhibit a charge-orbital ordering along the c axis with a spatial periodicity of the doubled lattice parameter of the undistorted cubic phase. Such a charge-orbital ordering vanishes abruptly above T-V and exhibits a thermal hysteresis, correlating closely with the Verwey transition in magnetite.
Charge-orbital ordering of magnetite studied by soft resonant X-ray scattering
(2006-05-01)
Chao, KS
;
Huang, DJ
;
Lin, HJ
;
Okamoto, J
;
Hsu, CH
We report direct experimental evidence for the existence of charge and orbital ordering in magnetite. In particular, measurements of oxygen K-edge resonant X-ray scattering on magnetite reveal that the oxygen 2p states in the vicinity of the Fermi level exhibit a charge-orbital ordering with a spatial periodicity of the doubled lattice parameter of the undistorted cubic phase. (c) 2006 Published by Elsevier B.V.
Composition determination of semiconductor quantum wires by X-ray scattering
(2005-02-28)
Hsu, CH
;
Tang, MT
;
Lee, HY
;
Huang, CM
;
Liang, KS
Self-assembled semiconductor nano-structures, e.g. quantum dots and wires, have recently attracted intensive interests due to their potential applications in optoelectronic industry. Strain field, compositional profile, size, and shape are the key factors determining the physical properties of these nano-structures. However, due to their mesoscopic size, it is a challenge to accurately determine those geometric and chemical parameters. In this work, we present the structural and compositional investigation of GaAs quantum wires grown on InP(0 0 1) substrates by grazing incidence X-ray scattering. In particular, we applied resonant X-ray scattering to determine the compositional distribution within the wires. With properly chosen diffraction peak and X-ray energy range, the profile of energy scan is highly sensitive to the composition of the region with selected lattice constant. As compared to other composition determination methods, which rely on the intensity ratio either between a strong and a weak diffraction or between the same Bragg diffraction collected at different energies, the profile of energy scan is not affected by the significant intensity modulation introduced by inter-wire correlation. Therefore, this method can be applied to systems of various surface morphologies and ordered structures and still provides compositional information with high accuracy and good resolution. (C) 2004 Elsevier B.V. All rights reserved.
Data line driver design for a 10'' 480x640x3 color FED
(1996)
Wang, CC
;
Wu, JC
;
Huang, CM
;
交大名義發表
;
電子工程學系及電子研究所
A data line driver with 120 outputs and capable of producing contrast ratio over 100 for a 10'' 480x(640x3) pixels color field emission display (FED) panel have been designed. Three phase clocks were used to reduce the maximum operating frequency to 22.68Mhz. A class AB Op Amp was used as the analog output buffer to reduce the power dissipation. The chip is implemented in a 24V CMOS process, chip size is 7620 mu m x 17500 mu m.
Development of cognitive structures and information processing strategies of elementary school students learning about biological reproduction
(2001-12-01)
Tsai, CC
;
Huang, CM
;
師資培育中心
;
Center of Teacher Education
The purpose of this study was to explore 28 Taiwanese fifth graders' development of knowledge on biological reproduction. The students received three weeks of instruction about biological reproduction and were interviewed to determine their cognitive structures. The interviews were conducted three times, at weekly intervals throughout the instruction, and an additional interview was conducted two months after the instruction. The interview data were analysed through a flow map method to show cognitive structure, and the students' information processing strategies, derived from an analysis of the flow map data, were also explored. The results suggest that there are three stages of cognitive structure development. In the first stage, categorised as 'knowledge development', both the extent of knowledge and the richness of networking of ideas increase. In the second stage, categorised as 'knowledge extension', only the amount of knowledge continues to increase. In the final stage, called 'knowledge refinement', the amount of knowledge recalled decreases, while the richness in networking of ideas remains stable. At the same time, the use of higher-order information processing modes (e.g., narrative containing statements inferring and explaining) increases dramatically. This implies that the rich connections between concepts and the use of higher-order information processing strategies may facilitate maturation of connected knowledge in memory.
Exploring students' cognitive structures in learning science: a review of relevant methods
(2002-09-01)
Tsai, CC
;
Huang, CM
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教育研究所
;
Institute of Education
Understanding how people think and how people organise knowledge are always major concerns for educational researchers. Hence, educators have developed various ways of representing learners' 'cognitive structures'. This article provides a review of the use of five methods of representing cognitive structures-free word association, controlled word association, tree construction, concept map and flow map. Through comparing the types of analyses that are generated from these cognitive structure representation methods, this paper discusses the applications, as well as the limitations, among these methods.
Investigation of high-power device and process for field emission display
(1996)
Yeh, CF
;
Liu, JS
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Huang, CM
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交大名義發表
;
電子工程學系及電子研究所
A method of fabricating a semiconductor device including a high withstanding voltage lateral CMOS and a standard logic CMOS is developed for field emission display. Structure, process and simulation by TSUPREM and MEDICI will be discussed in this paper.
Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique
(1998-07-01)
Wang, TH
;
Chang, TE
;
Chiang, LP
;
Wang, CH
;
Zous, NK
We proposed a new measurement technique to investigate oxide charge trapping and detrapping in a hot carrier stressed n-MOSFET by measuring a GIDL current transient. This measurement technique is based on the concept that in a MOSFET the Si surface field and thus GIDL current vary with oxide trapped charge. By monitoring the temporal evolution of GIDL current, the oxide charge trapping/detrapping characteristics can be obtained. An analytical model accounting for the time-dependence of an oxide charge detrapping induced GIDL current transient was derived, A specially designed measurement consisting of oxide trap creation, oxide trap filling with electrons or holes and oxide charge detrapping was performed. Two hot carrier stress methods, channel hot electron injection and band-to-band tunneling induced hot hole injection, were employed in this work, Both electron detrapping and hole detrapping induced GIDL current transients were observed in the same device. The time-dependence of the transients indicates that oxide charge detrapping is mainly achieved via field enhanced tunneling. In addition, we used this technique to characterize oxide trap growth in the two hot carrier stress conditions. The result reveals that the hot hole stress is about 10(4) times more efficient in trap generation than the hot electron stress in terms of injected charge.
Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
(1996)
Wang, TH
;
Chang, TE
;
Chiang, LP
;
Huang, CM
;
Guo, JC
Modeling finger number dependence on RF noise to 10 GHz in 0.13 mu m node MOSFETs with 80nm gate length
(2004)
King, MC
;
Lai, ZM
;
Huang, CH
;
Lee, CF
;
Ma, MW
We have modeled the as-measured and de-embedded NFmin on multi-fingers 0.13 mum node MOSFETs. In contrast to the as-measured large NFmin value and strong dependence on parallel gate fingers, the de-embedded NFmin. has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of R(g)g(m) and drain hot carrier noise but both have weak dependence on finger numbers.
New triple self-aligned (SA3) split-gate flash cell with T-shaped source coupling
(2005-10-01)
Sung, HC
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Lei, TF
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Huang, CM
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Kao, YC
;
Lin, YT
A new triple self-aligned (SA3) split-gate flash cell with a T-shaped source coupling approach is described in this paper. This novel structure can significantly enhance coupling capacitance between the Source and floating gate without increasing cell size. The enhancement can be simply modulated by an oxide-etching step. This new structure can be applied to program voltage reduction and cell size scaling. For program voltage reduction, the maximum program voltage of the new cell can be reduced from 7.4 to 6AV, which is characterized by a newly developed methodology for program vs disturb window characterization. For cell size scaling, comparable sort-1 and sort-2 yields are demonstrated using the new cell with a shorter floating length and a shallower source junction. To understand the relationship between source coupling ratio (SCR) and the program/erase mechanism, an insightful discussion on the program and erase mechanisms for our split-gate flash cell is also shown in this paper.
Properties of covalently bonded layered-silicate/polystyrene nanocomposites synthesized via atom transfer radical polymerization
(2005-02-01)
Li, CP
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Huang, CM
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Hsieh, MT
;
Wei, KH
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材料科學與工程學系
Covalently bonded layered silicated/polystyrene nanocomposites were synthesized via atom transfer radical polymerization in the presence of initiator-modified layered silicate. The resulting nanocomposites had an intercalated and partially exfoliated structure, as confirmed by X-ray diffraction and transmission electron microscopy. The thermal properties of the nanocomposites improved substantially over those of neat polystyrene. In particular, a maximum increase of 35.5 degreesC in the degradation temperature was displayed by these nanocomposites. Additionally, the surface elastic modulus and hardness of these nanocomposites were more than double those of pure polystyrene. (C) 2004 Wiley Periodicals, Inc.
Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides
(1999-08-02)
Zous, NK
;
Wang, TH
;
Yeh, CC
;
Tsai, CW
;
Huang, CM
The role of positive oxide charge in excess low-level leakage current in tunnel oxides induced by Fowler/Nordheim stress is investigated. A correlation between stress-induced gate current and substrate current in an n-channel metal-oxide-semiconductor field-effect transistor is observed. Both the gate current and the substrate current exhibit a significant transient effect. The mechanisms of the stress-induced currents and their field dependence are explored. Positive oxide charge tunnel detrapping is found to be the cause of the observed transient behavior in the two currents. The stress-created positive oxide charge can be significantly annealed by substrate hot electron injection. (C) 1999 American Institute of Physics. [S0003-6951(99)02226-3].