Browsing by Author "Iwai, H."

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Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors
(2011-01-01)
Kanda, T.
;
Zade, D.
;
Lin, Y. -C.
;
Kakushima, K.
;
Ahmet, P.
The electrical characteristics of InGaAs MOS capacitors with 8-nm-thick La2O3 gate dielectrics have been measured. The effects of annealing temperature and annealing time on the interface state densities (D-it) have been extracted. It has been found that the low Dit can be achieved by lowering the annealing temperature for an extended period of time.
Dielectrics for MOS Integrated Circuits
(2017-01-01)
Iwai, H.
;
國際半導體學院
;
International College of Semiconductor Technology
In this paper author's historical 45 year works for the development of the dielectrics for MOS Integrated Circuits are described as an invited talk as the recipient of 2017 ECS DS&T Thomas D. Callinan Award. Dielectric films has been the key components of the MOS LSI' s since its beginning. The author's contributions include introduction of BPSG reflow technique into NMOS LSI technology, the finding of plasma induced damage to the gate oxide during ion implantation and reactive ion etching the introduction of RTN gate oxide to prevent the boron penetration, the introduction of direct-tunneling gate oxide for CMOS logic devices, and the demonstration of the 0.4 nm EOT Lasilicate gate oxide MOSFETs.
Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
(2010)
Chang, Chia-Hua
;
Shie, Tin-En
;
Lin, Yueh-Chin
;
Kakushima, K.
;
Iwai, H.
Post deposition annealing is a critical process for the quality improvement of gate oxides on III-V MOS capacitors. Though high temperature annealing would effectively repair defects, it could also induce undesired electrical characteristics due to the crystallization of the gate oxide. In this work, we investigate the novel two steps annealing technique to improve the HfO2/In0.7Ga0.3As MOSCAP properties. The two steps process takes advantage of 1st high temperature annealing (550 degrees C) to improve the interface quality and 2nd low temperature annealing (450 degrees C) for curing bulk oxide without oxide crystallization. The two steps annealing technique greatly improves the HfO2/In0.7Ga0.3As properties as compared to single step process and is expected to be helpful for future III-V MOSFET development.
Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
(2009)
Funamiz, K.
;
Lin, Y. C.
;
Kakushima, K.
;
Ahmet, P.
;
Tsutsui, K.
InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.
Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
(2011-06-01)
Trinh, H. D.
;
Brammertz, G.
;
Chang, E. Y.
;
Kuo, C. I.
;
Lu, C. Y.
Ex situ sulfide and HCl wet chemical treatments in conjunction with in situ trimethyl aluminum (TMA) pretreatment were performed before the deposition of Al(2)O(3) on n-InAs surfaces. X-ray photoelectron spectroscopy analyses show a significant reduction of InAs native oxides after different treatments. The capacitance-voltage C-V characterization of Al(2)O(3)/n-InAs structures shows that the frequency dispersion in the accumulation regime is small (< 0.75%/dec) and does not seem to be significantly affected by the different surface treatments, whereas the latter improves depletion and inversion behaviors of the n-channel metal-oxide-semiconductor capacitors. The interface trap density profiles extracted from the simulation mainly show donorlike interface states inside the InAs band gap and in the lower part of the conduction band. The donorlike traps inside the InAs band gap and in the lower part of the conduction band were significantly reduced by using wet-chemical-plus-TMA treatments, in agreement with C-V characteristics.
Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
(2011-06-01)
Trinh, H. D.
;
Brammertz, G.
;
Chang, E. Y.
;
Kuo, C. I.
;
Lu, C. Y.
Ex situ sulfide and HCl wet chemical treatments in conjunction with in situ trimethyl aluminum (TMA) pretreatment were performed before the deposition of Al2O3 on n-InAs surfaces. X-ray photoelectron spectroscopy analyses show a significant reduction of InAs native oxides after different treatments. The capacitance-voltage C-V characterization of Al2O3/n-InAs structures shows that the frequency dispersion in the accumulation regime is small (< 0.75%/dec) and does not seem to be significantly affected by the different surface treatments, whereas the latter improves depletion and inversion behaviors of the n-channel metal-oxide-semiconductor capacitors. The interface trap density profiles extracted from the simulation mainly show donorlike interface states inside the InAs band gap and in the lower part of the conduction band. The donorlike traps inside the InAs band gap and in the lower part of the conduction band were significantly reduced by using wet-chemical-plus-TMA treatments, in agreement with C-V characteristics.
Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator
(2016)
Lin, Y. C.
;
Lin, J. C.
;
Lin, Y.
;
Wu, C. H.
;
Huang, Y. X.
Evaluation of GaN HEMT with Field Plate for Reliability Improvement
(2016)
Lin, Y. C.
;
Lin, J. C.
;
Lin, Y.
;
Wu, C. H.
;
Chin, P. C.
First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
(2018-01-01)
Luc, Q. H.
;
Fan-Chiang, C. C.
;
Huynh, S. H.
;
Huang, P.
;
Do, H. B.
We demonstrate, for the first time, the negative capacitance (NC) In0.53Ga0.47As nMOSFET with 8-nm Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric for sub-60 mV/dec subthreshold swing (SS). The impact of annealing treatments on the FE properties and electrical characteristics of NC InGaAs nMOSFETs are investigated. Optimized annealing condition results in NC effects at the HZO/Al2O3/InGaAs nMOSFETs with steep SS property (similar to 11 mV/dec).
Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniques
(2011-07-01)
Zade, D.
;
Kakushima, K.
;
Kanda, T.
;
Lin, Y. C.
;
Ahmet, P.
The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO(2) on electrical characteristics of W/HfO(2)/n-In(0.53)Ga(0.47)As capacitors are investigated. It is found that by depositing a thin HfO(2) layer at the interface when substrate temperature is raised to 300 degrees C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO(2) thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO(2)deposition at 300 degrees C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition. (c) 2011 Elsevier B.V. All rights reserved.
Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques
(2011-07-01)
Zade, D.
;
Kakushima, K.
;
Kanda, T.
;
Lin, Y. C.
;
Ahmet, P.
The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 degrees C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO(2)deposition at 300 degrees C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition. (c) 2011 Elsevier B.V. All rights reserved.
Optimization of gate insulator material for GaN MIS-HEMT
(2016)
Lin, Y. C.
;
Lin, T. W.
;
Wu, C. H.
;
Yao, J. N.
;
Hsu, H. T.
Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.