Browsing by Author "L.I.Chen"

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Charge Transport and Storage Effect of Gold Ion Implanted Silicon Dioxide MOS Structure
(交大學刊編輯委員會, 1971-04)
陳龍英
;
施敏
;
L.I.Chen
;
S.M.Sze
When gold ions of sufficiently high dose (~10^14 ions/cm^2) are implanted into thermally grown silicon dioxide MOS structure, novel charge transport and memory effect have been observed. For a typical structure with 800Å SiO2 and a projected ion range of 400Å, most of the induced interface states can be annealed out at 400℃. The charge transport in the implanted oxide is found to follow the Frenkel-Poole emission process with trapping energy level at 1.21 eV from the conduction band. Since the charge transport in the inner part of the oxide is by the Fowler-Nordheim tunneling mechanism, the MOS structure is equivalent to a double -layer memory device in which charges can be stored at the trapping centers inside the oxide when voltages are applied . Effects of oxide thickness, ion dose level, annealing temperature, and measurment temperature have been studied. Good agreements have been obtained between experimental results and theoretical predictions.
The Metal-Oxide-Semiconductor(MOS)Field-Effect Transistors
(交大學刊編輯委員會, 1966-10)
陳龍英
;
L.I.Chen
The operation theory of MOS field-effect transistors based on some simplifying assumptions are analyzed. Then a simple method is presented to determine the effective surface carrier mobility, the parasitic resistance in the source region, and the transconductance in the saturation region. Some curves which are necessary in the method are plotted. The saturation drain current and gate voltage of these curves are normalized to the zero bias saturation drain current and pinch-off voltage respectively, thus this method is valid for different kinds of MOS transistors. The curves show that the parasitic resistance may be neglected for most of the practical MOS transistors.