Browsing by Author "LOONG, WA"

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0.35-MU-M PATTERN FABRICATION USING QUARTZ-ETCH ATTENUATE PHASE-SHIFTING MASK IN AN I-LINE STEPPER WITH A 0.50-NA AND A 0.60-SIGMA
(1995-02-01)
LOONG, WA
;
SHY, SL
;
LIN, YC
;
交大名義發表
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應用化學系
A new method, namely, top critical dimension exposure-defocus tree (TCD E-D Tree), has been developed in this paper and used to analyze simulation results for quartz-etch attenuated phase-shifting mask (APSM). Simulation studies using Depict-3 (from TMA) on isolated and dense patterns indicate that numerical aperture (NA) 0.5 has greater depth of focus (DOF); NA 0.6 has larger exposure latitude (EL); best degree of coherence (sigma, sigma) value is between 0.6 approximately 0.7; best intensity transmittance (IT) range is 4 approximately 6%; the effect of mask bias on DOF and EL is rather small. The effect of sigma on space patterns including contact holes shows an inverse trend compared with lines. While conventional binary intensity mask (BIM) shows a 0.9 mum total DOF for dense line; APSM in our study (zero mask bias, 4% IT, 0.5 NA, 0.6 sigma) shows a 1.2 mum total DOF (30% improvement). The experimental results are highly in agreement with simulation. However, APSM shows only an insignificant improvement for EL in this study. Stepper with a NA of 0.5 and a sigma of 0.6 is very suitable for line, space and dense line/space pattern transfer using APSM in this study.
A DIRECT APPROACH TO THE MODELING OF POLYDIHEXYLSILANE AS A CONTRAST ENHANCEMENT MATERIAL
(1990-11-01)
LOONG, WA
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PAN, HT
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
In our study the polydihexylsilane (PDHS), as a contrast enhancement material, we found that the values of A, B, and C of Dill's modeling parameters of PDHS are irregularly dependent on its film thickness, and also refractive index decreases during exposure. These difficulties make Dill's model inadequate for the simulation of contrast enhanced lithography. A new model was derived to simulate the nonlinear photobleaching curves of PDHS with varying thickness. Linearity was found with parameters in this equation as a function of PDHS film thickness. The thicker PDHS film does not improve the contrast within the usually used thickness range of 0.1-0.6-mu-m. This equation also models the nonlinear bleaching curve of p-diazo-N, N-dimethylaniline-chloride zinc chloride and the reported bleaching curve of CEM-2 quite well.
CROSS SHAPED PATTERN ON CHROME MASK FOR 0.5 MU-M CONTACT HOLE FABRICATION
(1994-01-01)
LOONG, WA
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SHY, SL
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GUO, GC
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YANG, MT
;
SU, SY
This paper presents a cross shaped pattern on a chrome mask for the fabrication of 0.5 mu m contact hole. Based on simulation, in comparison to the conventional 0.5 mu m square mask, the contrast of aerial image of this mask gained 1.41 % at no defocus; 8.81 % at defocus 1.5 mu m. Exposure latitude gained 22.8 % under no defocus. From the experimental pattern transfer studies on positive tone photoresist using i-line 5X stepper, this mask has an useful focus range of -1.2 similar to +1.2 mu m while conventional has a range of -0.6 similar to +0.9 mu m. The drawback is that exposure dose needed is 1.2 similar to 1.5 times higher than conventional mask in our study.
ENHANCED O2 PLASMA STRIPPING OF P+ AND SI+ IMPLANTED NEGATIVE RESIST BY H2 PLASMA PRETREATMENT
(1993-04-01)
LOONG, WA
;
YEN, MS
;
WANG, FC
;
HSU, BY
;
LIU, YL
Hydrogen plasma pretreatments (100 W, 20 sccm, 0.2 torr, 40 approximately 115-degrees-C, 10 approximately 30 min) of Si+, P+, B+ and As+ implanted (100 keV, 1x10(15) ion/cm2) Hunt HR-200 negative resists to the oxygen plasma stripping (100 W, 40 sccm, 0.45 torr, 40 approximately 115-degrees-C) were studied in this report. The results showed that only the resistance to oxygen plasma stripping of Si+ and P+ implanted HR-200 were greatly reduced at the conditions in this study. The activation energies Eact of Si+ and P+ implanted HR-200 by oxygen plasma stripping can be both brought down from approximately 1.3 to approximately 0.85 kcal/mole by hydrogen plasma pretreatment. The FTIR, SEM and ESCA analyses indicated the decreasing of carbonization layers by hydrogen plasma pretreatments.
ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS
(1991-06-06)
LOONG, WA
;
YEN, MS
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
Hydrogen plasma pretreatment (90-115-degrees-C, 10-30 min) of P+-implanted (100 keV, 1 x 10(15) ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40-degrees-C. At lower temperature for hydrogen plasma pretreatment (down to 40-degrees-C) and higher temperature for oxygen plasma stripping (up to 115-degrees-C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.
ENHANCED OXYGEN REACTIVE ION ETCHING RESISTANCE OF DIAZONAPHTHOQUINONE-POLY (FORMYLOXYSTYRENE) RESIST SYSTEM BY PHOTOACID CATALYZED PHOTO-FRIES REARRANGEMENT AND POTASSIUM-ION TREATMENT IN AQUEOUS-SOLUTION
(1991-03-01)
LOONG, WA
;
SU, AN
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
This paper presents a new process for the enhancement of oxygen reactive ion etching (RIE) resistance of a single-layer, deep UV resist system by selective incorporating of potassium ion with resist image in aqueous solution after exposure. A resist system of diazonaphthoquinone (DAQ) and poly(p-formyloxystyrene) (PFS) mixed with catalytic amount of triphenylsulfonium hexafluoroarsenate as a photoacid is exposed to deep UV. Photoacid catalyzes the photo-Fries rearrangement of PFS to form poly(p-hydroxystyrene) (PHS); DAQ rearranges to form indene carboxylic acid and grafts into PHS via S-O bond formation. A latent image is formed by selective reaction of carboxylic group with C5H11COOK in aqueous solution in exposed area which is resistant to oxygen RIE. There are no such reactions in unexposed area. The dry developed negative-tone patterns by oxygen RIE are obtained.
ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT
(1991-03-14)
LOONG, WA
;
CHANG, HW
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained.
KEV ION-BEAM-EXPOSED POLY(METHYLISOPROPENYLKETONE) AND POLY(PHENYLISOPROPENYLKETONE)
(1991-03-01)
LOONG, WA
;
PENG, NT
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
The exposure characteristics of poly(methylisopropenylketone) (PMIPK) and poly(phenylisopropenylketone) (PPIPK) exposed to 40 and 80 keV H+ and B+ ion beams have been studied. It is found that the electron-rich phenyl group in PPIPK has increased stopping power for the bigger B+ ion, but not for the smaller H+ ion. For the same reason, the main chain scissioning of PPIPK is slower than that of PMIPK when they are exposed to B+, but not to H+, under the same exposure conditions. Linear relationships are found with simulation parameter A which stands for exposure efficiency of the ion beam as a function of exposure doses (keV x ion fluence) for a specific ion-exposed polymer within the used energy range.
OXIDATION OF GAAS SURFACE BY OXYGEN PLASMA AND ITS APPLICATION AS AN ANTIREFLECTION LAYER
(1991-07-15)
LOONG, WA
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CHANG, HL
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交大名義發表
;
應用化學系
;
National Chiao Tung University
The optical reflectivity of a GaAs wafer is found to decrease from about 45% down to about 5% for both the g-line and i-line by oxidation in low-power oxygen plasma at 300-degrees-C for 4 hours. The oxide layer on the GaAs top surface used as an in situ antireflection layer for optical microlithography is demonstrated to be effective.
PHOTOACID CATALYZED MAIN CHAIN SCISSION OF POLY(BUTENE-1 SULFONE) AS A DEEP UV POSITIVE RESIST
(1991-05-01)
LOONG, WA
;
CHANG, HW
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
Poly(butene-1 sulfone) (PBS), a sensitive e-beam and X-ray resist, is inert to UV light. We found that the addition of a small amount of photoacid, triphenylsulfonium hexafluoroarsenate (TPSHFA), to PBS can catalyze its main chain scission via C-S bond cleavage by 254 nm deep UV exposure and concurrent baking at 80-degrees-C. Therefore, PBS can be used as a deep UV positive resist. The chemistry and resist characteristics of the PBS + TPSHFA system are discussed.
PHOTOACID CATALYZED PHOTO-FRIES REARRANGEMENTS OF POLY(PARA-FORMYLOXYSTYRENE) AND FORMYLOXYNOVOLAC
(1990)
LOONG, WA
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CHEN, RH
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交大名義發表
;
應用化學系
;
National Chiao Tung University
POLY(DIMETHYL-CO-DIPHENYLSILANE) AS A DEEP-UV AND AN OXYGEN PLASMA PORTABLE CONFORMABLE MASK
(1992-08-01)
LOONG, WA
;
WANG, TH
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交大名義發表
;
應用化學系
;
National Chiao Tung University
Bi-layer resist processes for deep-UV and oxygen plasma are studied. Poly(dimethyl-co-diphenylsilane) is used as both deep-UV and oxygen plasma portable conformable masks because of its strong deep-UV and i-line (365 nm) absorption and its resistance to oxygen plasma. The bottom layer is P(MMA-PhPK), a copolymer of methylmethacrylate and 30 wt% of phenylpropenylketone, for the positive-tone pattern. P(MMA-PhPK) has greater deep-UV exposure sensitivity compared to PMMA. Good vertical sidewall profiles of lines of bottom layers are obtained.
POLY(FORMYLOXYSTYRENE) AS LIFT-OFF RESIST
(1989-04-09)
LOONG, WA
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HONG, WM
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應用化學系
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Department of Applied Chemistry
PROCESSES OF TOP-IMAGED SINGLE-LAYER RESISTS BY POTASSIUM-ION TREATMENT IN SOLUTION
(1991-09-01)
LOONG, WA
;
SU, AN
;
WANG, JL
;
CHU, CY
;
交大名義發表
This paper presents new processes for the enhancement of oxygen reactive ion etching (RIE) resistance of two single-layer resist systems by selective incorporation of potassium ions into the resist image in solution after exposure. One resist system is diazonaphthoquinone (DAQ) and poly(p-formyloxystyrene) (PFS) mixed with a catalytic amount of triphenylsulfonium hexafluoroarsenate as a photoacid generator. After deep-UV exposure, the photoacid catalyzes the photo-Fries rearrangement of PFS to form poly(p-hydroxystyrene) (PHS); DAQ rearranges to form indene carboxylic acid and grafts into PHS via S-O bond formation. A latent image is formed by selective reaction of carboxylic groups with C5H11COOK in aqueous solution in exposed areas which are resistant to oxygen RIE. Dry developed negative-tone patterns are obtained by oxygen RIE. The other resist system is AZ1350J, dipping in C23H47COOK in hexane after deep-UV exposure. C23H47COOK selectively incorporates into unexposed areas only. Dry developed positive-tone patterns are obtained by oxygen RIE in this case.
SIMULATION AND FABRICATION OF A NEW PHASE-SHIFTING MASK FOR 0.35 MU-M CONTACT HOLE PATTERN TRANSFER - HALF-TONE-RIM
(1994)
LOONG, WA
;
SHY, SL
;
GUO, GC
;
CHOU, YL
;
應用化學系
SIMULATION STUDY OF A NEW PHASE-SHIFTING MASK - HALFTONE-RIM
(1995)
LOONG, WA
;
YEH, CH
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SHY, SL
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應用化學系
;
Department of Applied Chemistry
THE MODELING AND SIMULATION OF NONLINEAR PHOTOBLEACHING MATERIALS
(1991-03-01)
LOONG, WA
;
PAN, HT
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
We found that the Dill's parameters of nonlinearly photobleaching materials of p-diazo-N,N-dimethylaniline chloride zinc chloride(DZC) and poly(di-n-hexylsilane) (PDHS) are irregularly dependent on their film thickness, and also their refractive indexes change during exposure. These difficulties make Dill's model inadequate for the simulation of nonlinear photobleaching materials used in contrast enhanced lithography. A direct approach was proposed to solve these difficulties. Equations with four parameters were derived to simulate the bleaching curves of DZC, PDHS and reported bleaching curve of CEM-2. Equations correlated very well with these curves by using best fitted parameters. Linearity was found with parameters in these equations as a function of film thickness of DZC and PDHS. Based on this linearity, simulations of these nonlinear bleaching curves are more accurate than those using Dill's model.
THE SIMULATION OF CONTRAST-ENHANCED LITHOGRAPHY
(1991-09-01)
LOONG, WA
;
PAN, HT
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
The Dill's parameters of nonlinear photobleaching materials of p-diazo-N,N-dimethylaniline chloride zinc chloride (DZC) and poly(di-n-hexylsilane) (PDHS) are irregularly dependent on their film thickness, and also their refractive indexes change during exposure. These difficulties make Dill's model inadequate for the simulation of nonlinear photobleaching materials used in contrast-enhanced lithography. A direct approach was proposed to solve these difficulties. Equations with four parameters were derived to simulate the nonlinear photobleaching curves of DZC, PDHS and other nonlinear photobleaching curves reported in literature. The equations correlated verv well with these curves by using best-fit parameters. Linearity was found with these four parameters in these equations as a function of film thicknesses of DZC and PDHS. Based on this linearity, the modelling and simulation of these nonlinear photobleaching materials as contrast-enhancement layers are more convenient and accurate than those using Dill's model.
TITANIUM MONONITRIDE AS AN ANTIREFLECTION LAYER ON ALUMINUM METALLIZATION FOR SUBMICRON PHOTOLITHOGRAPHIC PATTERNING
(1991-12-01)
LOONG, WA
;
CHIU, KD
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交大名義發表
;
應用化學系
;
National Chiao Tung University
Titanium mononitride (TiN) as an antireflection layer over aluminium metallization on a Si wafer (Al/Si) in submicron photolithography has been studied. Both notching and standing wave effects of non-dyed and dyed positive resists coated on TiN/Al/Si are eliminated with 0.8-mu-m designed linewidth test patterns using a g-line stepper under defocus of 0, +1 and -1-mu-m. TiN/Al/Si has a sheet resistivity of about 45 m-OMEGA/square, similar to Al/Si up to tested TiN thickness of 0.12-mu-m. Thus, TiN in the TiN/Al/Si system functions not only as a conventional diffusion barrier, but also as an antireflection layer and as a metallization layer. Selective reactive ion etching between Al and TiN can be achieved in an etchant gas mixture of 3:7 CHF3:CF4 with a DC bias of -100 V.