<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT

Loading...
Thumbnail Image

Journal Title

Journal ISSN

Volume Title

Publisher

DOI

Abstract

The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained.

Description

Citation

Endorsement

Review

Supplemented By

Referenced By