ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT
| dc.citation.epage | 542 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 541 | en_US |
| dc.citation.volume | 27 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | LOONG, WA | en_US |
| dc.contributor.author | CHANG, HW | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:05:18Z | |
| dc.date.available | 2014-12-08T15:05:18Z | |
| dc.date.issued | 1991-03-14 | en_US |
| dc.description.abstract | The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3837 | |
| dc.identifier.wosnumber | WOS:A1991FD31200038 | |
| dc.language.iso | en_US | en_US |
| dc.subject | PLASMAS | en_US |
| dc.subject | PHOTOLITHOGRAPHY | en_US |
| dc.subject | SEMICONDUCTOR DOPING | en_US |
| dc.subject | SEMICONDUCTOR GROWTH | en_US |
| dc.title | ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT | en_US |
| dc.type | Article | en_US |