Browsing by Author "Lai, Fang-, I"

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High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation
(2008-01-01)
Lai, Fang-, I
;
Lin, S. G.
;
Hsieh, C. E.
;
Kuo, H. C.
;
Lu, T. C.
InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America
Influence of barrier thickness modulation of InGaN/GaN MQW solar cells
(2013)
Hsieh, Chi-Chang
;
Lai, Fang-, I
;
Wang, Hsun-Wen
;
電子物理學系
;
Department of Electrophysics
The influence of band structure and indium composition of stepping layer are numerically investigated on the photovoltaic characteristics of InGaN/GaN MQW solar cell. In this study, the barrier structure and indium composition of inserting stepping layer leads to a substantial influence in the cell efficiency and output short circuit current density. It reveals that L-structure in barrier modulation would contribute to fine carrier collection and increase the conversion efficiency. Moreover, L-structure barrier modulation would effectively reduce the recombination rate in wells near p-GaN side where dominant recombination in well regions is. Barrier height of stepping layers plays an important role in high carrier collection that keeps high conversion efficiency. However, the optimal 5% indium composition of L-structure 14-pair MQW solar cell would obtain the best performance.
InGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processes
(2007-01-01)
Lai, Fang-, I
;
Huang, H. W.
;
Chiu, Ching-Hua
;
Lai, C. F.
;
Lu, T. C.
The InGaN/GaN nanorods LED was successfully fabricated by ICP-RIE and PEC processes. Compared with as-grown sample, the PL and EL peak-wavelengths of the nanorods with PEC show 8.6 and 10.5 nm blue-shift, respectively. (c) 2007 Optical Society of America
Low threshold current, low resistance 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE
(2007-01-01)
Yu, Hsin-Chieh
;
Wang, Jyh-Shyang
;
Su, Yan-Kuin
;
Chang, Shoou-Jinn
;
Kuo, Hao-Chung
The processing technology of 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 mu m oxide-confined aperture are 0.7mA, which correspond to 890A/cm(2) threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 M. The series resistance is 85 Omega which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.
P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
(2007)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Lai, Fang-, I
;
Kuo, Hao-Chung
;
Xuan, Rong
An oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom DBR, quantum wells, and top DBR, with a holey structure for light extraction. The internally reflected spontaneous emission can be extracted out of the etched hole.
Single-mode 780 nm multi-leaf holey vertical-cavity surface-emitting lasers
(2007-01-01)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Yeh, Zao-En
;
Lai, Fang-, I
;
Lee, Tsin-Dong
A single-mode oxide-confined VCSEL with multi-leaf holey structure for fiber-optic applications is demonstrated. Single fundamental mode output power of over 1.1 mW has been achieved in the 780 nm range.