High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation
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Abstract
InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America