Title: | High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation |
Authors: | Lai, Fang-, I Lin, S. G. Hsieh, C. E. Kuo, H. C. Lu, T. C. Wang, S. C. 交大-IBM智慧物聯網與巨量資料分析研發中心 |
Issue Date: | 1-Jan-2008 |
Abstract: | InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America |
URI: | http://hdl.handle.net/11536/146172 |
Journal: | 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 |
Begin Page: | 2255 |
Appears in Collections: | Conferences Paper |