Title: High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation
Authors: Lai, Fang-, I
Lin, S. G.
Hsieh, C. E.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
交大-IBM智慧物聯網與巨量資料分析研發中心
Issue Date: 1-Jan-2008
Abstract: InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America
URI: http://hdl.handle.net/11536/146172
Journal: 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9
Begin Page: 2255
Appears in Collections:Conferences Paper