High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation

標題:	High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation
作者:	Lai, Fang-, I Lin, S. G. Hsieh, C. E. Kuo, H. C. Lu, T. C. Wang, S. C. 交大-IBM智慧物聯網與巨量資料分析研發中心
公開日期:	1-一月-2008
摘要:	InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America
URI:	http://hdl.handle.net/11536/146172
期刊:	2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9
起始頁:	2255
顯示於類別：	會議論文