High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation
| dc.citation.spage | 2255 | en_US |
| dc.contributor.author | Lai, Fang-, I | en_US |
| dc.contributor.author | Lin, S. G. | en_US |
| dc.contributor.author | Hsieh, C. E. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.department | 交大-IBM智慧物聯網與巨量資料分析研發中心 | zh_TW |
| dc.date.accessioned | 2018-08-21T05:56:25Z | |
| dc.date.available | 2018-08-21T05:56:25Z | |
| dc.date.issued | 2008-01-01 | en_US |
| dc.description.abstract | InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America | en_US |
| dc.identifier.journal | 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/146172 | |
| dc.identifier.wosnumber | WOS:000260498401118 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation | en_US |
| dc.type | Proceedings Paper | en_US |
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