InGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processes
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The InGaN/GaN nanorods LED was successfully fabricated by ICP-RIE and PEC processes. Compared with as-grown sample, the PL and EL peak-wavelengths of the nanorods with PEC show 8.6 and 10.5 nm blue-shift, respectively. (c) 2007 Optical Society of America