Browsing by Author "Liang, Mei-Hui"

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Atomic layer deposition of epitaxial ZnO on GaN and YSZ
(2007-01-01)
Lin, Chih-Wei
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Ke, Dong-Jie
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Chao, Yen-Cheng
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Chang, Li
;
Liang, Mei-Hui
ZnO thin films were epitaxially grown by atomic layer deposition on both of GaN/c-sapphire and yttria-stabilized zirconia (YSZ) substrates for comparison. X-ray diffraction, cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements show that epitaxial ZnO films have better structural qualities and optical properties on GaN than on YSZ, whereas atomic force microscopy (AFM) shows that the surface of ZnO films on YSZ is smoother than on GaN. From the ZnO thickness measured by TEM, the growth rate of ZnO on GaN is about one (0 0 0 2) monolayer per cycle, which is roughly four times of that on YSZ. (c) 2006 Elsevier B.V. All rights reserved.
Epitaxy of m-plane ZnO on (112) LaAlO(3) substrate
(2009-05-01)
Ho, Yen-Teng
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Wang, Wei-Lin
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Peng, Chun-Yen
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Chen, Wei-Chun
;
Liang, Mei-Hui
Heteroepitaxial growth of non-polar in-plane (10 (1) over bar0) ZnO has been demonstrated on (112) LaAlO(3) single crystal substrates using the pulsed laser deposition method. X-ray diffraction, reflection high energy electron diffraction, and cross-sectional transmission electron microscopy with selected-area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 (1) over bar0)(ZnO) parallel to (112)(LAO), (11 (2) over bar0)(ZnO) parallel to ((1) over bar(1) over bar1)(LAO), and [0001](ZnO) parallel to [(1) over bar 10](LAO). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Epitaxy of m-plane ZnO on (112) LaAlO3 substrate
(2009-05-01)
Ho, Yen-Teng
;
Wang, Wei-Lin
;
Peng, Chun-Yen
;
Chen, Wei-Chun
;
Liang, Mei-Hui
Heteroepitaxial growth of non-polar in-plane (10 (1) over bar0) ZnO has been demonstrated on (112) LaAlO3 single crystal substrates using the pulsed laser deposition method. X-ray diffraction, reflection high energy electron diffraction, and cross-sectional transmission electron microscopy with selected-area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 (1) over bar0)(ZnO) parallel to (112)(LAO), (11 (2) over bar0)(ZnO) parallel to ((1) over bar(1) over bar1)(LAO), and [0001](ZnO) parallel to [(1) over bar 10](LAO). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate
(2007-01-01)
Chao, Yen-Cheng
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Lin, Chih-Wei
;
Ke, Dong-Jie
;
Wu, Yue-Han
;
Chen, Hou-Guang
ZnO growth on yttria-stabilized zirconia (YSZ) (I 1 1) single-crystal substrate has been carried out by metalorganic chemical vapor deposition (MOCVD). High-quality epitaxial ZnO has been evidenced by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Cross-sectional TEM from all deposited films reveals that the interface between ZnO and YSZ is atomically flat, and orientation relationship is deduced to be [1 (1) over bar 100](ZnO//)[11 (2) over bar](YSZ,) (2 (1) over bar(1) over bar0)(ZnO)//[001](YSZ) and (0 0 0 2)(ZnO)//(111)(YSZ). It has been found that surface roughness increases with the substrate temperature in the range of 500-700 degrees C. The growth rate also varies with the temperature. (c) 2006 Elsevier B.V. All rights reserved.
Growth of nonpolar (11(2)over-bar0) ZnO films on LaAlO(3) (001) substrates
(2008-09-22)
Ho, Yen-Teng
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Wang, Wei-Lin
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Peng, Chun-Yen
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Liang, Mei-Hui
;
Tian, Jr-Sheng
Nonpolar (11 (2) over bar0) ZnO films were grown on LaAlO(3) (001) single crystal substrates at temperature from 300 to 750 S C by pulsed laser deposition method. The films were examined using x-ray diffraction, reflection high energy electron diffraction, and photoluminescence measurements for the crystallinity. The surface morphology of ZnO films from atomic force microscopy exhibits L-shaped domains. Cross-sectional transmission electron microscopy with selected area diffraction reveals two types of a-plane ZnO domains perpendicular to each other with in-plane orientation relationships of [0001](ZnO)
Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition
(2008-04-01)
Liang, Mei-Hui
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Ho, Yen-Teng
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Wang, Wei-Lin
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Peng, Chun-Yen
;
Chang, Li
High-quality ZnMgO/ZnO multi-layer thin films in a-plane orientation were grown by pulsed laser deposition on r-plane sapphires. Reflection high-energy electron diffraction (RHEED) patterns were performed to monitor the growth morphology and the epitaxy. X-ray diffraction, RHEED, and atomic force microscopy show that anisotropic growth of a-plane ZnO results in stripe morphology, and the difference of thermal expansion between ZnO and sapphire plays a significant role on the film surface smoothness. Cross-sectional transmission electron microscopy identifies the cause of disorientation of ZnO growth on sapphire. (C) 2007 Elsevier B.V. All rights reserved.
Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition
(2008-04-01)
Ho, Yen-Teng
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Liang, Mei-Hui
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Hsiao, Feng-Ke
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Wang, Wei-Lin
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Peng, Chun-Yen
Non-polar (1 1 (2) over bar 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1](GaN)parallel to[1 (1) over bar 0](LAO) and [1 (1) over bar 0 0](GaN)parallel to[1 (1) over bar 0](LAO). (C) 2007 Elsevier B.V. All rights reserved.
Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition
(2013-05-01)
Ho, Yen-Teng
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Chang, Kuo-Shu
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Liu, Kou-Chen
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Hsieh, Li-Zen
;
Liang, Mei-Hui
The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po-2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po-2 less than 2 x 10(-3) Torr. The best quality of grown film is obtained under Po-2 = 2 x 10(-5) Torr and degraded under Po-2 = 2 x 10(-6) Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100](CeO2)//[110](LAO) and [010](CeO2)//[(1)over-bar10](LAO). No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD.
Substrate engineering of LaAlO(3) for non-polar ZnO growth
(2010-03-31)
Ho, Yen-Teng
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Wang, Wei-Lin
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Peng, Chun-Yen
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Chen, Wei-Chun
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Liang, Mei-Hui
We demonstrate that growth of non-polar ZnO in a-plane and m-plane can be achieved through substrate engineering of LaAlO(3) with (001) and (112) surface X-ray diffraction, reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal that a-plane ZnO on LaAlO(3) (001) consists of two types of domains perpendicular to each other with in-plane orientation relationships of [000](ZnO)//[1 (1) over bar0](LAO) and [1 (1) over tilde 00](ZnO)//[1 (1) over bar0](LAO) Single domain epitaxy of m-plane ZnO on LaAlO(3) (112) can be obtained with in-plane orientation relationships of (10 (1) over bar0)(ZnO)//(112)(LAO), [0001](ZnO)//[(1) over bar 10](LAO) and [1 (2) over bar 10](ZnO)//[(1) over bar(1) over bar1](LAO). (C) 2009 Elsevier B.V All rights reserved
Substrate engineering of LaAlO3 for non-polar ZnO growth
(2010-03-31)
Ho, Yen-Teng
;
Wang, Wei-Lin
;
Peng, Chun-Yen
;
Chen, Wei-Chun
;
Liang, Mei-Hui
We demonstrate that growth of non-polar ZnO in a-plane and m-plane can be achieved through substrate engineering of LaAlO3 with (001) and (112) surface X-ray diffraction, reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal that a-plane ZnO on LaAlO3 (001) consists of two types of domains perpendicular to each other with in-plane orientation relationships of [000](ZnO)//[1 (1) over bar0](LAO) and [1 (1) over tilde 00](ZnO)//[1 (1) over bar0](LAO) Single domain epitaxy of m-plane ZnO on LaAlO3 (112) can be obtained with in-plane orientation relationships of (10 (1) over bar0)(ZnO)//(112)(LAO), [0001](ZnO)//[(1) over bar 10](LAO) and [1 (2) over bar 10](ZnO)//[(1) over bar(1) over bar1](LAO). (C) 2009 Elsevier B.V All rights reserved
The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (001) LaAlO(3)
(2010-04-01)
Wang, Wei-Lin
;
Ho, Yen-Teng
;
Liang, Mei-Hui
;
Peng, Chun-Yen
;
Chang, Li
Both non-polar a-plane GaN and ZnO films grown on (0 0 1) LaAlO(3) (LAO) substrates consist of orthogonal domain structures. The influence of inserted underlying ZnO on the growth behavior of subsequently grown GaN has been investigated by using transmission electron microscopy and scanning electron microscopy. The size of GaN domains is increased after the incorporation of ZnO underlayer. GaN domains deposited on ZnO/(0 0 1) LAO extend along an in-plane preferential direction which has about 43-45 degrees from [0 0 0 1](GaN). The underlying ZnO results in overgrown GaN domains to locally form r-plane twin structures. (C) 2009 Elsevier B.V. All rights reserved.
The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (001) LaAlO3
(2010-04-01)
Wang, Wei-Lin
;
Ho, Yen-Teng
;
Liang, Mei-Hui
;
Peng, Chun-Yen
;
Chang, Li
Both non-polar a-plane GaN and ZnO films grown on (0 0 1) LaAlO3 (LAO) substrates consist of orthogonal domain structures. The influence of inserted underlying ZnO on the growth behavior of subsequently grown GaN has been investigated by using transmission electron microscopy and scanning electron microscopy. The size of GaN domains is increased after the incorporation of ZnO underlayer. GaN domains deposited on ZnO/(0 0 1) LAO extend along an in-plane preferential direction which has about 43-45 degrees from [0 0 0 1](GaN). The underlying ZnO results in overgrown GaN domains to locally form r-plane twin structures. (C) 2009 Elsevier B.V. All rights reserved.