Browsing by Author "Lin, Chien-Chung"

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3-D Stacked Technology of DRAM-Logic Controller Using Through-Silicon Via (TSV)
(2018-01-01)
Shen, Wen-Wei
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Lin, Yu-Min
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Chen, Shang-Chun
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Chang, Hsiang-Hung
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Chang, Tao-Chih
This paper describes a four-layer-stacked chip with 45-nm dynamic random access memory (DRAM) dice and 65-nm logic controller, which are interconnected by backside-via-last through-silicon via (TSV) processes. Fabrication of backside-via-last process and multiple die stacking using chip-to-chip bonding are presented with electrical connection between TSV (5-mu m-diameter/ 50-mu m-length) and Cu interconnects. Excellent fabrication of stacked dice verified that the micro bumps with 12-mu m diameter are bonded using three step temperature bonding profile. Further stacked DRAM/ Logic performance and system verifications are demonstrated successfully using 3-D heterogeneous integration.
A high quality liquid-type quantum dot white light-emitting diode
(2016-01-01)
Sher, Chin-Wei
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Lin, Chin-Hao
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Lin, Huang-Yu
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Lin, Chien-Chung
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Huang, Che-Hsuan
This study demonstrates a novel package design to store colloidal quantum dots in liquid format and integrate them with a standard LED. The high efficiency and high quality color performance at a neutral white correlated color temperature is demonstrated. The experimental results indicate that the liquid-type quantum dot white light-emitting diode (LQD WLED) is highly efficient and reliable. The luminous efficiency and color rendering index (CRI) of the LQD WLED can reach 271 lm W-op(-1) and 95, respectively. Moreover, a glass box is employed to prevent humidity and oxygen erosion. With this encapsulation design, our quantum dot box can survive over 1000 hours of storage time.
A high quality liquid-type quantum dot white light-emitting diode (vol 8, pg 1117, 2016)
(2018-04-07)
Sher, Chin-Wei
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Lin, Chih-Hao
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Lin, Huang-Yu
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Lin, Chien-Chung
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Huang, Che-Hsuan
A Highly Efficient Hybrid GaAs Solar Cell Based on Colloidal-Quantum-Dot-Sensitization
(2014-07-18)
Han, Hau-Vei
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Lin, Chien-Chung
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Tsai, Yu-Lin
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Chen, Hsin-Chu
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Chen, Kuo-Ju
This paper presents a hybrid design, featuring a traditional GaAs-based solar cell combined with various colloidal quantum dots. This hybrid design effectively boosts photon harvesting at long wavelengths while enhancing the collection of photogenerated carriers in the ultraviolet region. The merits of using highly efficient semiconductor solar cells and colloidal quantum dots were seamlessly combined to increase overall power conversion efficiency. Several photovoltaic parameters, including short-circuit current density, open circuit voltage, and external quantum efficiency, were measured and analyzed to investigate the performance of this hybrid device. Offering antireflective features at long wavelengths and luminescent downshifting for high-energy photons, the quantum dots effectively enhanced overall power conversion efficiency by as high as 24.65% compared with traditional GaAs-based devices. The evolution of weighted reflectance as a function of the dilution factor of QDs was investigated. Further analysis of the quantum efficiency response showed that the luminescent downshifting effect can be as much as 6.6% of the entire enhancement of photogenerated current.
A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD
(2016)
Hsu, Lung-Hsing
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Kuo, Chien-Ting
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Cheng, Yuh-Jen
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Chen, Kuan-Chao
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Kuo, Hao-Chung
An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra.
A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response
(2015)
Hsu, Lung-Hsing
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Hsu, Shun-Chieh
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Lee, Hsin-Ying
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Tsai, Yu-Lin
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Lin, Da-Wei
An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.
Advances in Quantum-Dot-Based Displays
(2020-07-01)
Huang, Yu-Ming
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Singh, Konthoujam James
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Liu, An-Chen
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Lin, Chien-Chung
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Chen, Zhong
In terms of their use in displays, quantum dots (QDs) exhibit several advantages, including high illumination efficiency and color rendering, low-cost, and capacity for mass production. Furthermore, they are environmentally friendly. Excellent luminescence and charge transport properties of QDs led to their application in QD-based light-emitting diodes (LEDs), which have attracted considerable attention in display and solid-state lighting applications. In this review, we discuss the applications of QDs which are used on color conversion filter that exhibit high efficiency in white LEDs, full-color micro-LED devices, and liquid-type structure devices, among others. Furthermore, we discuss different QD printing processes and coating methods to achieve the full-color micro-LED. With the rise in popularity of wearable and see-through red, green, and blue (RGB) full-color displays, the flexible substrate is considered as a good potential candidate. The anisotropic conductive film method provides a small controllable linewidth of electrically conductive particles. Finally, we discuss the advanced application for flexible full-color and highly efficient QD micro-LEDs. The general conclusion of this study also involves the demand for a more straightforward QD deposition technique, whose breakthrough is expected.
Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL
(2013-11-01)
Lin, Bing-Cheng
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Chen, Kuo-Ju
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Han, Hau-Vei
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Lan, Yu-Pin
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Chiu, Ching-Hsueh
InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be similar to 20% from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.
All Inorganic Perovskite Quantum Dots Hybrid Green Light-Emitting Diode with Stable Performance
(2018-01-01)
Yu, Chung-Ping
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Chung, Meng-Ting
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Chen, Tzu-Yu
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Huang, Yu-Ming
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Huang, Chung-Ping
A silica-coated inorganic perovskite quantum dot hybrid light-emitting diodes is aged continuously in high and low light intensity conditions. Both blue and ultra-violet-pumped samples showed stable performances up to 104 hours.
An Investigation of the Optical Analysis in White Light-Emitting Diodes With Conformal and Remote Phosphor Structure
(2013-11-01)
Chen, Kuo-Ju
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Chen, Hsin-Chu
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Lin, Chien-Chung
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Wang, Chao-Hsun
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Yeh, Chia-Chi
An effective emission model of phosphor film is proposed by using bidirectional scattering distribution function system (BSDF), and the model is verified by white light-emitting diodes (LEDs) with conformal and remote phosphor structure. The emission model is built to clarify the optical characteristics by analyzing the angular-dependent distribution of emission and excitation behaviors in phosphor film. The white LEDs with conformal and remote phosphor structure are also fabricated for experimental comparison. The uniformity of angular correlated color temperature (CCT) in white LEDs can be determined by the angular distribution of blue and yellow light, which is in turns decided by the refractive index variation between chip a (c) nd phosphor layers. Finally, the experimental results are found to have good agreement with the simulation results performing by the Monte Carlo method.
An Investigation on Stable and Continuous Operation of Hybrid Perovskite Quantum Dot Light Emitting Diodes
(2019-01-01)
Cho, Yu-Yun
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Hsu, Shun-Chieh
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Huang, Yu-Ming
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Shih, Hsiang-Yun
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Lee, Ting-Yu
Two different package structures of hybrid perovskite quantum dots light emitting diodes were demonstrated with stable and continuous light emission. With boron nitride nanoparticles, the lifetime of device is expected to be thousands of hours.
Angular color variation in micron-scale light-emitting diode arrays
(2019-08-05)
Yang, Shu-Mei
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Wang, Po-Hsun
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Chao, Chia-Hsin
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Chu, Chun-Wen
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Yeh, Yin-Tien
A simulation scheme was developed to explore the light distribution of full-color micron-scale light-emitting diode (LED) arrays. The influences of substrate thickness, patterning, and cutting angle of the substrate on several important features, such as light field pattern, light extraction efficiency, and color variation, were evaluated numerically. An experiment was conducted; the results were consistent with simulation results for a 225 x 125 mu m(2) miniLED and those for an 80 x 80 mu m(2) microLED. Based on the simulation results, the light extraction efficiency of LED devices with a substrate increases by 67.75% over the extraction efficiency of those without a substrate. The light extraction efficiency of LED devices with a substrate increases by 113.55% when an additional patterned design is used on green and blue chips. The calculated large angle Delta u'v' can be as low as 0.015 for miniLED devices. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Bridging the "green gap" of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals
(2016-01-01)
Tsai, Yu-Lin
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Liu, Che-Yu
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Krishnan, Chirenjeevi
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Lin, Da-Wei
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Chu, You-Chen
Green LEDs do not show the same level of performance as their blue and red cousins, greatly hindering the solid-state lighting development, which is the so-called "green gap". In this work, nano-void photonic crystals (NVPCs) were fabricated to embed within the GaN/InGaN green LEDs by using epitaxial lateral overgrowth (ELO) and nano-sphere lithography techniques. The NVPCs act as an efficient scattering back-reflector to outcouple the guided and downward photons, which not only boost the light extraction efficiency of LEDs with an enhancement of 78% but also collimate the view angle of LEDs from 131.5 degrees to 114.0 degrees. This could be because of the highly scattering nature of NVPCs which reduce the interference giving rise to Fabry-Perot resonance. Moreover, due to the threading dislocation suppression and strain relief by the NVPCs, the internal quantum efficiency was increased by 25% and droop behavior was reduced from 37.4% to 25.9%. The enhancement of light output power can be achieved as high as 151% at a driving current of 350 mA. Giant light output enhancement and directional control via NVPCs point the way towards a promising avenue of solid-state lighting.
Characteristic of UV Plasmonic Nanolasers with Different Spacer Thickness
(2016)
Chou, Yu-Hsun
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Chou, Bo-Tsun
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Lin, Sheng-Di
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Lin, Tzy-Rong
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Lin, Chien-Chung
We report on plasmonic lasers with ZnO nanowire lying on single-crystalline silver film with different SiO2 thickness spacer. Spacer thickness were optimized to adjust the surface plasmon dispersion curve and resulting different group index.
Characterization of Silicon Photonics Modulator Integration and High Efficiency Testing Platform
(2019-01-01)
Chen, Shang-Chun
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Wun, Sin-Jhu
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Hsu, Chih-Hsiang
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Lin, Chen-Yu
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Zhang, Jie
We successfully establish a silicon photonics device manufacturing and testing platform in 200mm SOI wafer. We integrate modulator and driver chip to show 30Gbis PAM4 capability. A fully-automatic wafer level characterization process is built up for all optical devices in surface coupling method.
Colloidal Quantum Dot Enhanced Dual-Junction Tandem Solar Cells
(2016-01-01)
Hsu, Shun-Chieh
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Kao, Yu-Cheng
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Han, Hau-Vei
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Kuo, Hao-Chung
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Horng, Ray-Hua
In this work, we demonstrate the the enhancement of two type hybrid QD dual-junction solar cell. The green QD520 sample, shows better performance than blue QD450 sample in current density and power conversion efficiency. The enhancement of short-circuit current and power conversion efficiency for green QD450 sample are 4.43% and 3.77% and the blue QD520 samples are 9.44% and 5.78%. For short wavelength, the enhancement can mainly be attributed to the photon downshift effect and antireflection, for long wavelength, it only the antireflection effect.
Compact Photonic Integrated Chip for Tunable Microwave Generation
(2014-03-01)
Chien, Chen-Yu
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Lo, Yen-Hua
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Wu, Yu-Chang
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Hsu, Shun-Chieh
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Tseng, Hung-Ruei
A tunable microwave generation is demonstrated by monolithically integrated photonic chip, which combines a mirror section and two distributed feedback (DFB) lasers. The focus ion beam technology was employed to achieve high-quality air/semiconductor slab for the mirror. Two DFB lasers (named slave and master lasers, respectively) can operate in a single fundamental mode when they are individually pumped. A microwave signal with the differential frequency between the two lasers can be obtained through optical heterodyning. A tunable microwave signal up to 25.5 GHz can be generated by adjusting the injected currents of the two DFB lasers. A four-wave mixing spectrum was measured and the linewidth of the generated radio frequency signal is 1.9 MHz.
Coreshell InGaN/GaN MQW Nanorod Photovoltaic Device
(2015)
Li, Yun-Jing
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Tsai, Yu Lin
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Chang, Jet-Rung
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Chang, Shih-Pang
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Lin, Chien-Chung
We report the fabrication and study of coreshell InGaN/GaN multiple quantum well (MQW) nanorod photovoltaic device. The nanorods were fabricated from a GaN substrate by top-down etch, followed by InGaN/GaN MQW growth. The 3D geometry allows higher Indium incorporation and extends the solar absorption spectral range as compared with a planar reference sample. The proof-of-concept coreshell nanorod photovoltaic device has a fill factor of about 54.2%, the short current density of 1.16 mA/cm(2), the open circuit voltage of 0.68 V, and the power conversion efficiency of 0.38%, respectively.
Design of III-V/Silicon hybrid surface-emitting laser with grating structure
(2015)
Huang, Jen-Hung
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Chen, Bai-Ci
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Wu, Yu-Chang
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Lin, Chien-Chung
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光電系統研究所
The VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 mu m and a TiO2/Sio(2) DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.
Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s
(2019-08-14)
Shen, Chih-Chiang
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Hsu, Tsung-Chi
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Yeh, Yen-Wei
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Kang, Chieh-Yu
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Lu, Yun-Ting
We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-mu m oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 degrees C and 85 degrees C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 degrees C and 85 degrees C due to the reduction of cavity length from 3 lambda/2 to lambda/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 degrees C.