Browsing by Author "S.F.Guo"

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Radiation,Temperature and Gain in n-p-n Planar Transistor
(交大學刊編輯委員會, 1966-10)
張俊彥
;
郭双發
;
C.Y.Chang
;
S.F.Guo
The dependence of current amplification factor on emitter current, temperature, resistivities, surface treatments as well as on the radiation effects are investigated. The experiments show that the current amplification factor is more dependent on recombination and scattering mechanism than the other effects. Temperature effect is profound also, high temperature causes high gain(400% at 200℃), low temperature causes very low gain (5% at liquid oxygen). Both the neutron and the Υ-ray irradiation cause the Frenkel defect in the crystal and thus also decrease the current gain preatly. Recovery of gain is obtained by heating at 300℃, 150℃ etc. in dry nitrogen atmosphere and then followed by quick annealing.
The Fabrication and The Characteristics of Metal-Oxide-Semiconductor Transistors
(交大學刊編輯委員會, 1967-04)
郭雙發
;
張俊彥
;
陳福全
;
S.F.Guo
;
C.Y.Chang
The theory of MOS transistors is introduced in brief and the design and the fabrication of MOS transistors are disgussed in detail. The experimental MOS transistor characteristics show the effects of the surface states and can be determined by the gate capacitance versus gate voltage characteristics by a spacially designed automatic curve tracer.
The Study of Reflex Klystron
(交大學刊編輯委員會, 1966-04)
郭双發
;
S.F.Guo
In the fabrication of the modern silicon semiconductor device, such as the passivated planar transistor or the monolithic intergrated circuit, the p-n junction is formed by impurity diffusion through a finite diffusion mask opening. The diffusion mask is a layer of silicon dioxide thermally grown by steam oxidation technique. The diffusion opening may be a rectangular stripe or circular dot precisely revealed by photolithographic technique. The impurity atom distribution can not be approximated by an elementary one-dimensional diffusion process. Instead, this distribution must be determined from a detailed solution of a boundary value problem for the structure under consideration. The purpose of this paper is to present a full three-dimensional soution of diffusion problem by integral transform method. The solution is based upon an instantaneous source diffusion process. Two different diffusion openings are considered in the analysis. The rectangular coordinates and the multiple Fourier transform are used for the rectangular geometry. The cylindrical coordinates and the multiple Fourier-Bessel transform are used for the circular geometry.