Browsing by Author "Tsai, CE"

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A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnection
(1995)
Sun, SC
;
Tsai, MH
;
Chiu, HT
;
Chuang, SH
;
Tsai, CE
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
(1996-05-01)
Tsai, MH
;
Sun, SC
;
Tsai, CE
;
Chuang, SH
;
Chiu, HT
This work investigated the barrier properties of metalorganic chemical-vapor-deposited (CVD) tantalum nitride (TaN) and physical-vapor-deposited (PVD) TaN between Cu and Si. The CVD TaN film had a preferred orientation (200) with a grain size of around 60 nm, while the PVD TaN had a (111) preferred orientation with a grain size of around 20 nm, as determined by transmission electron microscopy (TEM) and x-ray diffraction (XRD) analyses. Degradation study of the Cu/TaN/Si contact system was also performed by sheet resistance measurement, scanning electron microscopy (SEM), XRD, secondary ion mass spectroscopy (SIMS), and shallow junction diodes. These results indicated that the PVD TaN film can act as a better diffusion barrier than the CVD TaN film. The higher thermal stability of PVD TaN than CVD TaN can be accounted by their difference in microstructures. The failure mechanisms of both CVD TaN and PVD TaN films as diffusion barriers between Cu and Si were also discussed. (C) 1996 American Institute of Physics.
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
(1996-05-01)
Tsai, MH
;
Sun, SC
;
Tsai, CE
;
Chuang, SH
;
Chiu, HT
This work investigated the barrier properties of metalorganic chemical-vapor-deposited (CVD) tantalum nitride (TaN) and physical-vapor-deposited (PVD) TaN between Cu and Si. The CVD TaN film had a preferred orientation (200) with a grain size of around 60 nm, while the PVD TaN had a (111) preferred orientation with a grain size of around 20 nm, as determined by transmission electron microscopy (TEM) and x-ray diffraction (XRD) analyses. Degradation study of the Cu/TaN/Si contact system was also performed by sheet resistance measurement, scanning electron microscopy (SEM), XRD, secondary ion mass spectroscopy (SIMS), and shallow junction diodes. These results indicated that the PVD TaN film can act as a better diffusion barrier than the CVD TaN film. The higher thermal stability of PVD TaN than CVD TaN can be accounted by their difference in microstructures. The failure mechanisms of both CVD TaN and PVD TaN films as diffusion barriers between Cu and Si were also discussed. (C) 1996 American Institute of Physics.
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN(x) interlayer in n-GaN layers
(2003-10-27)
Tu, RC
;
Chuo, CC
;
Pan, SM
;
Fan, YM
;
Tsai, CE
Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiN(x) interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiN(x) interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiN(x) interlayer is expected because of the increased intensity of light scattered on the SiN(x) nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiN(x) interlayer doubles that without a SiN(x) interlayer. (C) 2003 American Institute of Physics.
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
(2003-10-27)
Tu, RC
;
Chuo, CC
;
Pan, SM
;
Fan, YM
;
Tsai, CE
Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiNx interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiNx interlayer is expected because of the increased intensity of light scattered on the SiNx nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiNx interlayer doubles that without a SiNx interlayer. (C) 2003 American Institute of Physics.
Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
(1995-12-01)
Tsai, MH
;
Sun, SC
;
Lee, CP
;
Chiu, HT
;
Tsai, CE
Low-resistivity tantalum nitride (TaN) films were deposited by low-pressure metal-organic chemical vapor deposition (MOCVD) using a new precursor tertbutylimidotrisdiethyl amidotantalum. The surface morphology and the step coverage of TaN films were characterized by scanning electron microscopy. The film deposited at 450 degrees C had nearly 100% step coverage and the step coverage decreased to 25% for the films deposited at 650 degrees C, The carbon and oxygen concentrations are about 10 at.% in the CVD TaN films, as determined by Auger electron spectroscopy. From Rutherford backscattering spectroscopy and secondary ion mass spectroscopy analysis, TaN films were found to be effective diffusion barriers between aluminum and silicon up to 550 degrees C. The electrical measurements of diode-leakage current indicate that the Al/TaN/Si structure remained stable up to 500 degrees C, after which Al started to diffuse through the TaN layer and resulted in a higher leakage current.
Performance of MOCVD tantalum nitride diffusion barrier for copper metallization
(1995)
Sun, SC
;
Tsai, MH
;
Tsai, CE
;
Chiu, HT
;
奈米中心
Properties of metalorganic chemical vapor deposited tantalum nitride thin films
(1995)
Sun, SC
;
Tsai, MH
;
Tsai, CE
;
Chiu, HT
;
奈米中心
Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode
(2006-01-25)
Wang, TC
;
Kuo, HC
;
Lee, ZH
;
Chuo, CC
;
Tsai, MY
We report high output power from AlInGaN multiple quantum well (MQW) ultraviolet light-emitting diodes. The high Al containing cladding layer, electron blocking layer and p-contact layer were chosen for transparency at 365 nm to reduce the internal absorption, reduce electron overflow and enhance output power. The UV output power was as high as 1.52 mW at 20 mA at 368 nm under room temperature CW operation. The maximum output power in CW operation is 11 mW at 170 mA. In this letter, we demonstrate a helpful and easy way to measure and calculate the junction temperature of AlInGaN UVLEDs. (c) 2005 Elsevier B.V. All rights reserved.
Study of InGaN multiple quantum dots by metal organic chemical vapor deposition
(2006-04-01)
Wang, TC
;
Kuo, HC
;
Lu, TC
;
Tsai, CE
;
Tsai, MY
We reports a study of InGaN Multiple quantum dot layers. Using the in-situ SiNx treatment process, InGaN multiple quantum dot layers were successfully developed. The InGaN multiple quantum dot layers were constructed with SiNx dot mask layers, InGaN dot layers, and GaN cap layers on a 2-mu m-thick GaN underlying layer on a sapphire substrate. Optical properties including room temperature photoluminescence (PL), temperature dependent PL, and low power power-dependent PL were examined and discussed. The structure was also analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) line scan.
Syntheses and characterization of organoimido complexes of tantalum; potential single-source precursors to tantalum nitride
(1998)
Chiu, HT
;
Chuang, SH
;
Tsai, CE
;
Lee, GH
;
Peng, SM
New single-source precursor to tantalum nitride thin films, ((BuN)-N-t)Ta(NEt2)(3), and related complexes, (RN)Ta(NEt2)(3) (R = Pr-i and Pr-n), were prepared by reacting corresponding (RN)TaCl(3)py(2) complexes (R = Bu-t, Pr-i and Pr-n) with LiNEt2 in hydrocarbon solvents. The structure of ((BuN)-N-t)TaCl(3)py(2) was determined by X-ray crystallography. (C) 1998 Elsevier-Science Ltd. All rights reserved.
Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition
(2004-02-15)
Tu, RC
;
Tun, CJ
;
Chuo, CC
;
Lee, BC
;
Tsai, CE
This study examined how the duration of SiNx treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3 x 10(11) cm(-2) exhibited strong photoluminescence (PL) emission at room temperature (RT). Increasing the duration of the SiN, treatment of the underlying GaN layer, the RT-PL peak of the following InGaN nano-islands and QDs was found to be red-shifted from the violet to the greenish region, and the spectrum was broadened. Additionally, the average height of InGaN nano-islands and QDs increased with the duration of SiNs treatment, explaining the redshift of the RT-PL peak.