Browsing by Author "WANG, CS"
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Item type:Item, A GENERAL PERFORMANCE ANALYSIS METHOD FOR UNIFORM MEMORY ARCHITECTURES(1993) ;CHEN, JJ ;WANG, CS ;CHOU, CR ;資訊科學與工程研究所Institute of Computer Science and EngineeringThe performance of a multiprocessor system greatly depends on the bandwidth of its memory architecture. In this paper, uniform memory architectures with various interconnection networks including crossbar, multiple-buses and generalized shuffle networks are studied. We propose a general method based on the Markov chain model by assuming that the blocked memory requests will be redistributed to the memory modules in the next memory cycle. This assumption results in an analysis with lower complexity where the number of states is linearly proportional to the number of processors. Moreover, it can provide excellent estimation on the system power and memory bandwidth for all three types of interconnection networks as compared with the simulation results in which the blocked memory requests are resubmitted to the same memory module. Comparisons also show that our method is more general and precise than most existing analysis methods. The method is further extended to estimate the performance of multiprocessor system with caches. The approximation results are also shown to be remarkably good.Item type:Item, A SIMPLE EXPERIMENT OF SIMULATING OPTICAL BISTABILITY WITH AN OSCILLOSCOPE AND PHOTODIODES(1991-12-01) ;WANG, CS ;LAU, CS ;SHY, JT ;GOU, YS電子物理學系This paper presents a novel and simple hybrid optical bistable system which is composed of an oscilloscope and photodiodes. It allows us to easily control its parameters, including transmission function, feedback amplification, and time of delay feedback. Here, we will present the features of bistability, multistability and self-oscillation in this system and also the dynamical behaviors induced by the effect of the delay in the feedback loop of this optical bistable system.Item type:Item, A SIMPLE EXPERIMENT OF SIMULATING OPTICAL FLIP-FLOP OPERATOR WITH 2 OSCILLOSCOPES AND PHOTODIODES(1993-06-01) ;WANG, CS ;CHEN, NP ;SHY, JT ;GOU, YS光電工程學系A coupled hybrid optical bistable device composed of two oscilloscopes and two photodiode detectors has been constructed. This device is used to experimentally simulate the basic feature of the flip-flop operator proposed by Otsuka [Opt. Lett. 14 (1989) 72]. Most importantly, it allows us to model the system easily, and hence the condition of an occurrence of the flip-flop operation is accordingly predicted by the linear stability analysis. Furthermore, the influences of symmetry property of the optical system upon the flip-flop operation have been discussed as well.Item type:Item, ANALOG STUDY OF BIFURCATION STRUCTURES IN A VANDERPOL OSCILLATOR WITH A NONLINEAR RESTORING FORCE(1993-10-01) ;KAO, YH ;WANG, CS ;電信工程研究所 ;光電工程研究所Institute of Communications EngineeringThe injection locking and chaotic transitions in a Van der Pol oscillator with a nonlinear-restoring-force term were investigated in this article via an electronic circuit. Three types of locking processes were differentiated from each other in light of local and global bifurcations. The influences of the nonlinear restoring force on the bifurcation structure were also discussed.Item type:Item, BIFURCATION STRUCTURE OF THE DUFFING OSCILLATOR WITH ASYMMETRICAL POTENTIAL WELL(1989-03-27) ;HUANG, JC ;KAO, YH ;WANG, CS ;GOU, YS電子物理學系Item type:Item, CHARACTERIZATION OF MONOLITHIC POLYCRYSTALLINE-SILICON RESISTORS IN SUB-MICRON THICKNESS(1982) ;LU, NCC ;LU, CY ;LEE, MK ;SHIH, CCWANG, CSItem type:Item, CRITICAL MAGNETIC-FIELD FOR A SYMMETRICAL QUANTUM-WELL OR SINGLE BARRIER(1993) ;WANG, CS ;CHUU, DS ;電子物理學系 ;電控工程研究所Department of ElectrophysicsItem type:Item, CRUCIAL FORMULA FOR DETERMINATION OF THE OCCURRENCE OF THE NONCHAOTIC STATES IN RF-BIASED NONLINEAR OSCILLATORS(1995-06-01) ;YANG, TH ;WANG, CS ;HUANG, JC ;GOU, YS電子物理學系Item type:Item, EFFECTS OF GRAIN-BOUNDARY TRAPPING-STATE ENERGY-DISTRIBUTION ON THE ACTIVATION-ENERGY OF RESISTIVITY OF POLYCRYSTALLINE-SILICON FILMS(1984) ;LU, CY ;LU, NCC ;WANG, CS ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, ELECTRONIC-ENERGY SPECTRUM IN A BARRIER-LIKE MULTILAYER QUANTUM-WIRE WITH A MAGNETIC-FIELD PARALLEL TO THE WIRE AXIS(1994-09-01) ;CHUU, DS ;WANG, CS ;物理研究所 ;電控工程研究所Institute of PhysicsThe energy levels of an electron confined in a barrier-like multilayer quantum wire structure with a perpendicular magnetic field along the (z) over cap-direction in cylindrical coordinates are exactly derived and the numerical results are calculated by the iteration method. The ground and excited states are calculated for various multi-layer potential configurations and wire radii. The characteristics of the energy spectrum are discussed by the superposition of well and barrier-potential subsystems. Major different characteristics of energy spectra with variation of wire radius and potential configuration are discussed. The behaviors of bulk Landau levels under large perpendicular magnetic field are explained. The characteristics of crossing points within neighboring modes is explained by the combined effect of well- and barrier-subsystems.Item type:Item, ELECTRONIC-ENERGY SPECTRUM IN AN ASYMMETRIC DOUBLE-BARRIER WITH A CROSSED MAGNETIC AND ELECTRIC-FIELD(1993-12-01) ;WANG, CS ;CHUU, DS ;物理研究所Institute of PhysicsThe energy spectra of an electron in an asymmetric quantum double barrier within an in-plane magnetic field and electric field perpendicular to the barrier interfaces are exactly derived and the numerical results are calculated by iteration. The ground and excited states are calculated for various asymmetric potential barriers, barrier widths and well widths in different magnetic and electric field strengths. Major different characteristics of energy spectra between wide and narrow wells are discussed. The behavior of bulk Landau levels in the well region of a wide well and the elevation of the ground state in a narrow well are explained. It is found that the density distribution of electrons in a large well region is strongly affected by the asymmetric potential configuration and electric field in the growth direction.Item type:Item, ELECTRONIC-ENERGY SPECTRUM IN AN ASYMMETRIC QUANTUM-WELL WITH A CROSSED MAGNETIC AND ELECTRIC-FIELD(1993-09-01) ;WANG, CS ;CHUU, DS ;電子物理學系 ;電控工程研究所Department of ElectrophysicsThe energy spectra of an electron in an asymmetric quantum well within an in-plane magnetic field and an electric field perpendicular to the barrier interfaces are exactly derived and the numerical results are calculated by iteration. The ground and excited states are calculated for various asymmetric potential barriers, well widths and electric fields. Major different characteristics of energy spectra between wide and narrow wells are discussed. The behaviors of a bulk Landau level in the well region of a larger well width and the elevation of the ground state in a smaller well width are explained. The density distribution of electrons in a large well region is strongly affected by the barrier ratio and the electric field in the growth direction.Item type:Item, INFLUENCES OF HARMONIC COUPLING ON BIFURCATIONS IN DUFFING OSCILLATOR WITH BOUNDED POTENTIAL WELL(1992-11-22) ;KAO, YH ;WANG, CS ;YANG, TH ;電信工程研究所光電工程學系Item type:Item, NOISE ENHANCEMENT OF PERIOD DOUBLING IN STRONGLY MODULATED SEMICONDUCTOR-LASERS(1992-07-01) ;KAO, YH ;LIN, HT ;WANG, CS ;電信工程研究所光電工程學系In this paper the phenomena of period doubling and bistability of multiple spiking states in deeply modulated laser diodes are investigated. The situations of in which the period doubling in the parameter space occurs are indicated. The influence of noise on the period doubling is examined by employing the singl-mode rate equations with Langevin noise.Item type:Item, OBSERVATIONS OF A BIFURCATION STRUCTURE IN A RF-DRIVEN SEMICONDUCTOR-LASER USING AN ELECTRONIC SIMULATOR(1992-01-01) ;KAO, YH ;TSAI, CH ;WANG, CS ;電信工程研究所光電工程學系This article presents a realization of electronic circuit to examine the dynamics of the rate equations for a directly modulated semiconductor laser. The dynamic transitions are characterized by observing the phase portraits and time evolutions of photon density and carrier density. Under the proper conditions of modulation depth and modulation frequency, the system reveals the period doubling route and bistability in various resonant regions. These are also confirmed by the numerical simulations.Item type:Item, ON THE RESISTANCE SWITCHING IN POLYCRYSTALLINE-SILICON RESISTORS(1983-01-01) ;LU, CY ;LU, NCC ;SHIH, CC ;LEE, MKWANG, CSItem type:Item, ON THE RESISTANCE SWITCHING IN POLYCRYSTALLINE-SILICON RESISTORS(1983-01-01) ;LU, CY ;LU, NCC ;SHIH, CC ;LEE, MKWANG, CSItem type:Item, PITCHFORK BIFURCATION, CRISIS, AND FLIP-FLOP OPERATION IN A 2-ELEMENT OPTICAL BISTABLE DEVICE(1991-01-07) ;WANG, CS ;CHERN, JL ;SHY, JT ;GOU, YSMCIVER, JKFlip-flop operation and the pitchfork bifurcation in a coupled element optical bistable device are studied. In the long delay limit, the dynamics is described by a two-dimensional mapping. Within a pitchfork bifurcation structure, a flip-flop operation is found. However, this flip-flop operation cannot be realized when a boundary crisis appears due to the increase of the input intensity.Item type:Item, POTENTIAL DEPENDENCE OF THE BIFURCATION STRUCTURE IN GENERALIZED DUFFING OSCILLATORS(1992-03-15) ;WANG, CS ;KAO, YH ;HUANG, JC ;GOU, YS電子物理學系The features of various bifurcations in forced Duffing oscillators are extensively investigated by means of numerical simulation. Some common features in four types of potential well are found. With reference to the transition boundaries in parameter space, the influences of local symmetry properties of the potential well on the bifurcation routes are indicated and definite functional forms of the border line in omega-k space separating the region with simple stable period-1 solutions from the region with complicated solutions are determined. A method combining Floquet theory with harmonic balance is presented to describe the mechanism of the transitions.Item type:Item, THE EFFECT OF FILM THICKNESS ON THE ELECTRICAL-PROPERTIES OF LPCVD POLYSILICON FILMS(1984) ;LU, NCC ;LU, CY ;LEE, MK ;SHIH, CCWANG, CS