Browsing by Author "WEI, CS"

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CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS
(1994)
WANG, CK
;
YING, TL
;
WEI, CS
;
LIU, LM
;
CHENG, HC
ELLIPSOMETRIC MEASUREMENTS AND ITS ALIGNMENT - USING THE INTENSITY RATIO TECHNIQUE
(1995-09-01)
CHAO, YF
;
WEI, CS
;
LEE, WC
;
LIN, SC
;
CHAO, TS
Using first-order treatment on azimuth errors of the polarizer (P) and analyzer (A) with respect to the plane of incidence (POI), we construct two intensity ratios around a certain configuration: such as P = +/- pi/4 and A = 0 as compared to A = pi/2. These expressions can be used not only to align the azimuths of the polarizer and analyzer to the POI, hut also to obtain the ellipsometric parameter phi without locating the minimum intensity, BK7 glass and SiO2/Si thin film are ultilized to evaluate this technique.
INVESTIGATION OF A HIGH-QUALITY AND ULTRAVIOLET-LIGHT TRANSPARENT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATION
(1995-09-01)
WANG, CK
;
YING, TL
;
WEI, CS
;
LIU, LM
;
電子工程學系及電子研究所
A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNz) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNz film with very low compressive stress (<1x10(9) dyn/cm(2)) and excellent UV-transmittance (>70% for 1.6 mu m-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and SiH4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM's) devices, and very good UV-erasability and reliability performances are demonstrated.
INVESTIGATION OF A HIGH-QUALITY AND ULTRAVIOLET-LIGHT TRANSPARENT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATION
(1995-09-01)
WANG, CK
;
YING, TL
;
WEI, CS
;
LIU, LM
;
電子工程學系及電子研究所
A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNz) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNz film with very low compressive stress (<1x10(9) dyn/cm(2)) and excellent UV-transmittance (>70% for 1.6 mu m-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and SiH4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM's) devices, and very good UV-erasability and reliability performances are demonstrated.
THE ELLIPSOMETRIC MEASUREMENTS ON SIO2 BY INTENSITY RATIO TECHNIQUE
(1994)
CHAO, YF
;
WEI, CS
;
LEE, WC
;
LIN, SC
;
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