Browsing by Author "Zhao, Jun-Kai"

Now showing 1 - 5 of 5

40 nm Bit-Interleaving 12T Subthreshold SRAM With Data-Aware Write-Assist
(2014-09-01)
Chiu, Yi-Wei
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Hu, Yu-Hao
;
Tu, Ming-Hsien
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Zhao, Jun-Kai
;
Chu, Yuan-Hua
This paper presents a new bit-interleaving 12T sub-threshold SRAM cell with Data-Aware Power-Cutoff (DAPC) Write-assist to improve the Write-ability to mitigate increased device variations at low supply voltage under deep sub-100 nm processes. The disturb-free feature facilitates the bit-interleaving architecture that can reduce multiple-bit errors in a single word and enhance soft error immunity by employing error checking and correction (ECC) techniques. The proposed 12T SRAM cell is demonstrated by a 4 kb SRAM macro implemented in 40 nm general purpose (40GP) CMOS technology. The test chip operates from typical V-DD to 350 mV (similar to 100 mV lower than the threshold voltage) with V-DDMIN limited by Read operation. Data can be written successfully for V-DD down to 300 mV. The measured maximum operation frequency is 11.5 MHz with total power consumption of 22 mu W at 350 mV, 25 degrees C.
A 28nm 36kb High Speed 6T SRAM with Source Follower PMOS Read and Bit-Line Under-Drive
(2015)
Hong, Chi-Hao
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Chiu, Yi-Wei
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Zhao, Jun-Kai
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Jou, Shyh-Jye
;
Wang, Wen-Tai
In this paper, we present source follower PMOS Read and bit-line under-drive techniques to improve the operation speed as compared to present commercial SRAM compilers. A source follower PMOS is utilized to connect local bit-lines (LBL) to global bit-lines (GBL) instead of using a NAND gate. To further improve the discharging time from LBL to GBL, we propose a bit-line under-drive circuit to reduce the voltage level of LBL. The simulated access time of the proposed macro is 445 ps at slow N slow P (SS) corner, -40 degrees C, 0.81 V. As compared to the SRAM macro which is generated by commercial SRAM compilers with the fastest combination, the access time of the proposed SRAM macro is 12% faster than that of commercial SRAM compilers. A 36kb high speed 6T SRAM macros with source follower PMOS Read and bit-line under-drive techniques is fabricated in 28nm HKMG CMOS process. The measurement results of the chip in SS corner show the proposed SRAM macro passes all MBIST patterns at 500 MHz at 0.81 V, room temperature.
A 40 nm 0.32 V 3.5 MHz 11T Single-Ended Bit-Interleaving Subthreshold SRAM with Data-Aware Write-Assist
(2013)
Chiu, Yi-Wei
;
Hu, Yu-Hao
;
Tu, Ming-Hsien
;
Zhao, Jun-Kai
;
Jou, Shyh-Jye
This paper presents a new bit-interleaving 11T subthreshold SRAM cell with Data-Aware Power-Cutoff (DAPC) Write-assist to mitigate the leakage and variation and improve the Write-ability in deep sub-100nm technology. Measurement results from a 4 Kb test chip implemented in 40 nm General Purpose (40GP) CMOS technology operates for V-DD down to 0.32 V (similar to 0.69X of threshold voltage) with V-DDMIN limited by Read operation. The measured maximum operation frequency is 3.5 MHz (16.5 MHz) at 0.32 V (0.38 V) with total power consumption of 15.2 mu W (27.2 mu W) at 25 degrees C.
A Subthreshold SRAM with Embedded Data-Aware Write-Assist and Adaptive Data-Aware Keeper
(2016)
Chiu, Yi-Wei
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Hu, Yu-Hao
;
Zhao, Jun-Kai
;
Jou, Shyh-Jye
;
Chuang, Ching-Te
We propose a data-aware power cut-off write-assist 12T SRAM cell (DPC12T) which improves the write-ability to improve the write minimum operating voltage (V-MIN). Moreover, we propose an adaptive data-aware keeper (DAK) to lower the design conflicts among the keeper current, read current and the bit-line leakage current to improve the read stability and read V-MIN for single-ended read operation. Fabricated 40nm 8kb test chip macro with 64 cells per bit-line can achieve V-MIN 250 mV and 230 mV without and with enabling DAK at 6 MHz and 4 MHz, respectively. The SRAM test macro with 256, 512 and 1024 cells per bit-line demonstrates that DAK improves the read V-MIN by 9% to 21% at low supply voltages.
Subthreshold SRAM Macro Design with Pulse-Controlled Dynamic Voltage Scaling (PC-DVS)
(2014)
Zhao, Jun-Kai
;
Chiu, Yi-Wei
;
Jou, Shyh-Jye
;
Chu, Yuan-Hua
;
電子工程學系及電子研究所
In this paper, we propose a pulse-controlled dynamic voltage scaling (PC-DVS) scheme in an SRAM macro to suppress leakage power consumption to reduce total power. The proposed SRAM macro is capable of operating in low-voltage regime with high variation immunity. The proposed PC-DVS scheme reduces the array power up to 62% at 500 kHz while the selected sub-bank operating at 0.5 V and the unselected sub-banks Hold data at 0.35 V.