Browsing by Issue Date, starting with "1998-12-10"

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Pulse-read on erasable thermal phase-change superresolution disks
(1998-12-10)
Liu, JR
;
Liu, PY
;
Tang, NY
;
Shieh, HPD
;
光電工程學系
New erasable thermal phase-change superresolution (EPSR) disks composed of mask and recording layers can increase recording density by the detection of the below-diffraction-limited marks within the readout spot. The formation of the aperture and the readout signal on the EPSR disk were analyzed. The feasibility of optically designed EPSR disks was evaluated by thermal simulation. A carrier-to-noise ratio of 32 dB at a mark size of 0.4 mu m, 8 dB higher than that of a conventional disk, was obtained by application of a pulse-read method to the EPSR disks at a wavelength of 780 nm and a numerical aperture of 0.55. (C) 1998 Optical Society of America.
AuBe Ohmic contacts to p-type ZnTe
(1998-12-10)
Lan, WH
;
Lin, WJ
;
Cheng, YC
;
Tai, K
;
Tasi, CM
Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.
Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
(1998-12-14)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
(1998-12-14)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
Spin-dependent electronic tunneling at zero magnetic field
(1998-12-15)
Voskoboynikov, A
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A(III)B(V) semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures. [S0163-1829(98)04548-2].
Spin-dependent electronic tunneling at zero magnetic field
(1998-12-15)
Voskoboynikov, A
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A(III)B(V) semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures. [S0163-1829(98)04548-2].
Small perturbation analysis of oblique incidence in dielectric gratings
(1998-12-20)
Hwang, RB
;
Jen, DK
;
電信工程研究所
;
Institute of Communications Engineering
In this paper, the method of first-order perturbation is proposed to investigate the plane-wane scattering by dielectric gratings with a small modulation index at oblique incidence. Under the assumption of small perturbation, the cross coupling between the fields of the polarizations (TE and TM) due to the oblique incidence cart be represented by the TE and TM transmission lines fed by distributed current and (or) voltage sources, respectively. The results show good agreement with that obtained by a rigorous formulation. (C) 1998 John Wiley & Sons, Inc.
CSPL---一個程序中心之軟體工程環境(III)
(1999)
陳振炎
;
CHEN JEN-YEN JASON
;
交通大學資訊工程系
電子資訊產業供應鏈管理---子計畫II：晶圓製造設備備用零件及光罩需求管理之研究
(1999)
李慶恩
;
交通大學工業工程與管理系
Effects of a random porosity model on heat transfer performance of porous media
(1999-01-01)
Fu, WS
;
Huang, HC
;
機械工程學系
;
Department of Mechanical Engineering
Due to the non-uniform distribution and fractural structure of the beads inside a porous medium, the porosity distributed in the porous medium is random for most realistic situations. Therefore, the effects of the porosity distributed casually inside a porous block mounted on a heated region with a laminar slot impinging jet on flow and thermal fields are investigated numerically. A numerical method of SIMPLEC is adopted to solve governing equations, as for the energy equation, a one-equation thermal model with Van Driest's wall function is adopted. AU the non-Darcian effects including the solid boundary and inertial effects are considered and three different porosity models of constant, variable and random are examined. The results indicate that the relationship between the local Nusselt number Nu(x) and the near wall local porosity epsilon(x) is a negative correlation. Consequently, in order to enhance the thermal performance of the porous medium, the porosity near the solid plate should be smaller to make the conductive heat transfer to be dominant. (C) 1998 Elsevier Science Ltd. All rights reserved.
以中華衛星三號之衛星追蹤衛星任務推求全球重力場
(1999)
黃金維
;
Hwang Chein-Way
;
交通大學土木工程系
整合商品搜尋與中介者的Internet購物系統之研究
(1999)
劉敦仁
;
LIU DUEN-REN
;
交通大學資訊管理研究所
極平整之超薄氧化層
(1999)
蔡中
;
交通大學電子工程系
A new compact neuron-bipolar cellular neural network structure with adjustable neighborhood layers and high integration level
(1999)
Yen, WC
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new compact structure called the neuron-bipolar cellular neural network is proposed and analyzed. In the new structure, the parasitic PNP bipolar junction transistor in the CMOS process is used to implement the neuron whereas the coupling MOS resistor is used to realize the synapse weights among various neurons. It has the advantages of compact structure and small chip size. The neuron-bipolar CNN with single neighborhood layer r=1 has been successfully applied to the noise removing operation on images. Moreover, the proposed neuron-bipolar CNN can easily realize the multi-layer neighborhood structure. Thus the proposed neuron-bipolar CNN has a great potential in the VLSI implementation of neural network.
Development of low-temperature wafer level vacuum packaging for microsensors
(1999)
Huang, WF
;
Shie, JS
;
Lee, C
;
Gong, SC
;
Peng, CJ
Wafer level packaging received lots of attention in microsystems recently. Because it shows the potential to reduce the packaging cost, while the yield of devices after dicing and packaging can be increased. However, there is a limitation of commercialized wafer bonding technology, i.e., the high process temperature, such as 1000 degrees C of silicon fusion bonding, and 450 degrees C of anodic bonding. A novel low temperature wafer bonding with process temperature lower than 160 degrees C is proposed, it applies the In-Sn alloy to form the interface of wafer bonding. The experiment results show helium leak test of 6x10(-9)torr-liter/sec, and a tensile strength as high as 200kg/cm(2). Reliability test after 1500 temperature cycles between -10 to 80 degrees C also shows no trace of degradation compared to the initial quality of the samples. This low temperature soldering process demonstrates its promising potential at the wafer level packaging in industrial production.
Complex refractive index measurements based on Fresnel's equations and the uses of a lock-in amplifier
(1999)
Su, DC
;
Chiu, MH
;
Lee, JY
;
光電工程學系
;
Department of Photonics
A new method for measuring complex refractive index is presented based on Fresnel's equations and the uses of a lock-in amplifier. A lock-in amplifier is introduced into a common path interferometer to measure the product of the amplitude reflection coefficients of s and p polarizations and their corresponding phase difference of a light beam reflected from a medium with complex refractive index. Then, these data are substituted into the special equations derived from Fresnel's equations, the complex refractive index can be obtained by numerical calculations. The resolution of this method is better than 0.01. It has both merits of a conventional common-path interferometer and a heterodyne interferometer. And its validity is demonstrated.
潛盾隧道施工技術規範之研討
(科技圖書, 1999)
方永壽
High birefringent bistolane liquid crystals for LCD application
(1999)
Hsu, CS
;
Shyu, KF
;
Chuang, YY
;
Wu, ST
;
應用化學系
Several series of bistolane liquid crystals were synthesized and characterized. The structure-properties relationship of the obtained compounds is discussed. These highly conjugated liquid crystals exhibit not only high birefringence but also low melting temperature. Their potential applications for Rat panel display employing light scattering on Bragg reflection are emphasized.
互動式網路聲視訊之研究---子計畫VII：視訊伺服器之設計與製作(IV)
(1999)
張瑞川
;
CHANG RUEI-CHUAN
;
交通大學資訊科學研究所
Equal resource sharing scheduling for PCS data services
(1999)
Jeng, JY
;
Lin, YB
;
資訊科學與工程研究所
;
Institute of Computer Science and Engineering
For high speed mobile communication applications, the data rate can be increased by using multiple channels (or time slots) instead of one channel. To reduce the high blocking rate of multiple channels assignment, flexible resource allocation strategies have been proposed. This paper proposes the Equal Resource Sharing Allocation scheme (ERSA scheme) for flexible resource allocation. The ERSA scheme dynamically averages the allocated resource to the call requests based on the number of calls in a base station. The scheme accommodates the maximum number of requests while providing acceptable quality to the admitted requests. We developed an analytic model to investigate the performance of ERSA, and conducted simulation experiments to validate the analytic model. We define satisfaction indication SI as the performance measurement of the resource allocation algorithm. The experiment results indicate that the ERSA scheme outperforms other resource allocation algorithms proposed in our previous study.