Browsing by Issue Date, starting with "1999-06-14"

Now showing 1 - 20 of 80531

小詩葉
(1999-06-14)
管管
Temperature-accelerated dielectric breakdown in ultrathin gate oxides
(1999-06-14)
Chen, CC
;
Chang, CY
;
Chien, CH
;
Huang, TY
;
Lin, HC
Temperature-accelerated effects on dielectric breakdown of ultrathin gate oxide with thickness ranging from 8.7 to 2.5 nm are investigated and analyzed. Although superior reliability for ultrathin gate oxide at room temperature has been reported in recent literatures, a strong temperature-accelerated degradation of oxide reliability is observed in this study. Experimental results show that both charge-to-breakdown (Q(bd)) and breakdown field (E-bd) characteristics are greatly aggravated for ultrathin oxide at elevated temperature. The Arrhenius plot also confirms that the activation energies of Q(bd) and E-bd increase significantly as oxide thickness decreases, explaining the higher sensitivity to temperature for thinner oxides. (c) 1999 American Institute of Physics. [S0003-6951(99)02024-0].
Electron inelastic interactions with overlayer systems
(1999-06-15)
Kwei, CM
;
Chiou, SY
;
Li, YC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An overlayer system composed of a thin film on the top of a semi-infinite substrate was studied in this work for electron inelastic interactions. Analytical expressions for the depth-dependent inelastic differential and integral inverse mean free paths were derived for both incident and escaping electrons. The interface (film-substrate) effect and the surface (vacuum-film) effect were analyzed by comparing the results of an overlayer system and a semi-infinite system. It was found that the interface effect extended to several angstroms on both sides of the interface for a 500 eV electron incident into or escaping from the vacuum-SiO2-Si and the vacuum-Au-Ni systems. An application of the spatial-varying inelastic differential inverse mean free paths was made by Monte Carlo simulations of the electron elastic backscattering from an overlayer system. Good agreement was found between results calculated presently and data measured experimentally on the elastic reflection coefficient. (C) 1999 American Institute of Physics. [S0021-8979(99)00712-4].
「飛行」里的「飛行」
(1999-06-15)
管管
Energy-dispersive x-ray diffraction and Raman scattering of Zn1-xMnxSe bulk crystals at high pressure
(1999-06-15)
Yang, CS
;
Ro, CS
;
Chou, WC
;
Lin, CM
;
Chuu, DS
Energy-dispersive x-ray diffraction experiments were carried out to investigate the structure of phase transitions under high pressure. It was found that the zinc blende (B-3) to rock salt (B-1) phase transition pressures of Zn0.93Mn0.07Se and Zn0.76Mn0.24Se bulk crystals are found 11.8+/-1.5 and 9.9+/-0.5 GPa, respectively. The respective bulk moduli are 61.8+/-0.8 and 60.5+/-0.8 GPa. The pressure-induced zinc blende (ZB) to rock salt (RS) structure phase transition is interpreted as a signature of the semiconductor to metal transition for Zn1-xMnxSe. The above interpretation is further corroborated by the observation of the disappearance of the longitudinal optical phonon at the pressure where the ZB to RS structure transition occurs. (C) 1999 American Institute of Physics. [S0021-8979(99)05312-8].
「飛行」里的「飛行」
(1999-06-15)
管管
Process evolution support in concurrent software process language environment
(1999-06-15)
Chou, SC
;
Chen, JYJ
;
資訊工程學系
;
Department of Computer Science
This article describes the process evolution support in concurrent software process language (CSPL) environment. Process evolution refers to dynamically changing process programs during process enactment. It is required in process-centered software engineering environment (PSEE) because: (1) parts of a software process may be unclear during process modeling, and (2) processes may change during enactment. In CSPL, process evolution can be achieved through (1) meta-process or (2) process program change. This article also describes object decomposition in CSPL, which relates to process evolution. CSPL allows decomposing large objects (software products) into sub-objects. With this, the schedule, budget, and developer of each sub-object development can be separately assigned and controlled. (C) 1999 Elsevier Science B.V. All rights reserved.
A posteriori boundary element error estimation
(1999-06-15)
Jou, J
;
Liu, JL
;
應用數學系
;
Department of Applied Mathematics
An a posteriori error estimator is presented for the boundary element method in a general framework. It is obtained by solving local residual problems for which a local concept is introduced to accommodate the fact that integral operators are nonlocal operators. The estimator is shown to have an upper and a lower bound by the constant multiples of the exact error in the energy norm for Symm's and hypersingular integral equations. Numerical results are also given to demonstrate the effectiveness of the estimator for these equations. It can be used for adaptive h, p, and hp methods. (C) 1999 Elsevier Science B.V. All rights reserved.
「飛行」里的「飛行」
(1999-06-15)
管管
「飛行」里的「飛行」
(1999-06-15)
管管
Aging kinetics of heat-treated Zn-4Al-3Cu alloy
(1999-06-18)
Li, BJ
;
Chao, CG
;
材料科學與工程學系
;
Department of Materials Science and Engineering
他們砍了我們養蠶的桑樹
(1999-06-19)
管管
Homeotropic liquid-crystal device with two metastable states
(1999-06-21)
Chen, LY
;
Chen, SH
;
光電工程學系
;
Department of Photonics
We report a homeotropic liquid-crystal device which has two metastable states when an electric field is applied. The behaviors of these two metastable states are similar to the bistable twist nematic device. We control this device electrically in the rising period to switch it from the homeotropic state toward either the twist or homogeneous state. It not only behaves as a conventional homeotropic cell but also provides another twist structure for further applications. The back-flow effect in the rising period plays an important role in the switching mechanism. The experimental results are described in this letter. (C) 1999 American Institute of Physics. [S0003-6951(99)01525-9].
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
(1999-06-22)
Lin, CF
;
Tseng, WT
;
Feng, MS
;
Wang, YL
;
材料科學與工程學系
A multilayer thin film structure (SiO2/SiNx/SiO2) with a one-step chemical-mechanical polish (CMP) process is developed for shallow trench filling and planarization for ULSI devices in the quarter micron regime. By fine-tuning the plasma-enhanced chemical vapor deposition (PECVD) conditions we successfully modified the stoichiometry and other characteristics of the as-deposited SiNx and oxide films. As these film characteristics are changed, the CMP removal rate selectivity between sacrificial oxide and nitride stopper layer can also be adjusted. Correspondingly, the CMP process latitude for shallow trench isolation in 0.25 mu m memory devices can be broadened by sequentially depositing multilayered oxide and nitride films with adjustable characteristics and CMP removal rates. Dishing-free wide trench areas with excellent planarity can be achieved through the integration of the proposed multilayered PECVD oxide/nitride scheme and the one-step CMP process. (C) 1999 Elsevier Science S.A. All rights reserved.
開「樟」天岸馬
(1999-06-26)
管不着
不要讓你的乳房長青苔
(1999-06-26)
管管
In-place random list permutations
(1999-06-30)
Hwang, WP
;
Wang, CL
;
資訊工程學系
;
Department of Computer Science
We give two algorithms to randomly permute a linked list of length n in place using O(n log n) time and O(log n) stack space in both the expected case and the worst case. The first algorithm uses well-known sequential random sampling, and the second uses inverted sequential random sampling. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Synthesis and characterization of side-chain liquid crystalline polyoxetanes containing 4-(alkanyloxy)phenyl 4-pentylbenzoate side groups
(1999-07-01)
Hsu, CS
;
Lu, YH
;
應用化學系
;
Department of Applied Chemistry
The synthesis and characterization of side-chain liquid-crystalline polyoxetanes containing 4-(alkanyloxy)phenyl 4-pentylbenzoate side groups is presented. Differential scanning calorimetry, polarizing optical microscopy and X-ray diffraction measurements were used to characterize the mesomorphic properties of the polyoxetanes. Those polymers with three to five methylene units in the spacers exhibit the enantiotropic smectic A and a nematic phaser, whereas the polymers with longer spacers (n = 6 or 12) display polymorphism of smectic phases. The polyoxetane backbones are amorphous in nature. No side chain crystallization occurred for any of the polyoxetanes synthesized in this study.
Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization
(1999-07-01)
Wu, WF
;
Lin, CC
;
Huang, CC
;
Lin, HC
;
Chang, TC
Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 mu Omega cm, high <111> preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches. (C) 1999 The Electrochemical Society. S1099-0062(99)01-023-8. All rights reserved.
Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide
(1999-07-01)
Chen, YC
;
Yang, MZ
;
Tung, IC
;
Chen, MP
;
Feng, MS
The high quality silicon oxide films were prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetraethylorthosilicate (TEOS)-oxygen based chemistry. The O-2- or N2O-plasma treatments were performed on the as-deposited films as an attempt to improve the properties of the TEOS oxide films. TEOS oxide film deposited at lower pressure had lower Si-OH content, less carbon impurity, and flatter surface, and hence had better electrical properties. Both O-2- and N2O-plasma would decrease the oxygen content of the oxide film, which led the composition of the film to deviate from the stoichiometric SiO2. The O-2-plasma treatment did not show the encouraging effect on the chemical structure and electrical properties of the TEOS oxide films. In contrast, the N2O-plasma treatment could be a promising means to improve the breakdown field and leakage current density of the TEOS oxide films, which was accomplished by the N2O-plasma effect to facilitate the passivation of dangling bonds, linking reaction of Si-OH bonds, nitridation reaction and densification of the amorphous silicon oxide network.