Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization

Abstract

Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 mu Omega cm, high <111> preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches. (C) 1999 The Electrochemical Society. S1099-0062(99)01-023-8. All rights reserved.