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Miscibility, specific interactions, and self-assembly behavior of phenolic/polyhedral oligomeric silsesquioxane hybrids

(2004-03-15)

Lee, YJ

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Kuo, SW

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Huang, WJ

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Lee, HY

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Chang, FC

The miscibility of a phenolic resin with polyhedral oligomeric silsesquioxane (POSS) hybrids and the specific interactions between them were investigated with Fourier transform infrared (FTIR) spectroscopy and wide-angle X-ray diffraction (WAXD). An analysis of the morphology and microstructure was performed with polarized optical microscopy and atomic force microscopy (AFM). The interassociation equilibrium constant between the phenolic resin and POSS (38.7) was lower than the self-association equilibrium constant of pure phenolic (52.3) according to the Painter-Coleman association model. This result indicated that POSS was partially miscible with the phenolic resin. A polarized optical microscopy image of a phenolic/POSS hybrid material (20 wt % POSS) indicated that the crystals of POSS were arranged evenly in the phenolic matrix; the self-assembled array of POSS crystals was also confirmed by AFM. This phenomenon was consistent with the FTIR spectroscopy and WAXD analyses. (C) 2004 Wiley Periodicals, Inc.

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High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

(2004-03-15)

Peng, YCS

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Wu, YS

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材料科學與工程學系

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Department of Materials Science and Engineering

High-power light-emitting diodes (LEDs) fabricated on Cu substrates were investigated in this study. The AlGaInP LED structure was bonded to a Cu substrate by using indium-tin-oxide as the diffusion barrier layer. It was found that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA, which was eight times higher than that used in traditional GaAs-substrate LEDs. The luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which was three times higher than that of the GaAs-substrate LEDs. (C) 2004 American Institute of Physics.

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The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties

(2004-03-15)

Dimitrov, D

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Shieh, HPD

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光電工程學系

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Department of Photonics

Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks. (C) 2003 Elsevier B.V. All rights reserved.

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Implantable neuromorphic vision chips

(2004-03-18)

Chiang, CT

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Wu, CY

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電子工程學系及電子研究所

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Department of Electronics Engineering and Institute of Electronics

The implantable neuromorphic vision chips are analysed and implemented. These proposed analogue integrated circuits are to implement four cell functions of the retina for implant. These retinal cells are photoreceptor cells, horizontal cells, bipolar cells, and ganglion cells. All simulation results are successfully verified and consistent with researches on biological retinas.

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僑生週系列展覽活動 ─ 寰宇風情

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間：93年3月1 7、18、19 日（三、四、五）內容：今年的展覽的主軸是「寰宇風情」旅遊資訊展

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本校與馬偕醫院進行研究交流研討會

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間：93年3月13日（六）地點：馬偕紀念醫院台北院區福音樓第一講堂

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本校師長赴台中榮民總醫院進行訪問暨座談

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間：93 年 3 月 9 日（二）行程：15:30-17:30 與陽明實習學生座談、17:00-19:00 與陽明校友晚餐及座談

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本校接受陽明牙醫校友會捐贈新臺幣一佰萬元

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間：93 年 3 月 10 日（三）捐贈地點：陽明牙醫館 105 視聽教室捐贈項目：陽明牙醫館 110 室、 201 室、 203 室、 304 室整建工程

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生化所專題演講系列

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間： 93 年 3 月 29 日 ( 一 ) 10:30-11:30 地點：生化所 501 教室

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人生的選擇－談留學英倫

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

交通大學就業與升學輔導組訂於 3/22(一)晚上6:30，舉辦台灣聯大四校視訊演講，講題為「人生的選擇－談留學英倫」.....

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醫學系演講公告

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間： 93年3月24日(三)中午12:00-13:30 地點：護理館一樓傳醫所 118室

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基因體研究中心分子細胞遺傳學技術研習會

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

線上報名截止日期 : 2004 年 3 月 23 日 (額滿為止) 活動日期 : 2004 年 3 月 29 - 30 日

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九十二學年度第十三次行政主管會報

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間：九十三年三月十七日 ( 週三）上午八時三十分整地點：行政大樓二樓會議室

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醫學系網路教學評鑑開跑了

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

活動時間： 3/8 至 7/5 活動對象：醫學系一至五年級同學

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生物資訊研究所專題演講公告

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間： 93 年 3 月 23 日 ( 星期二 ) 12:30 pm 地點：牙醫系館 302 教室

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九十二學年度第十二次行政主管會報

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間：九十三年三月三日 (週三）上午八時三十分整地點：行政大樓二樓會議室

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醫學生物技術所演講公告

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

時間：星期四早上 8:10 ~ 10:00 地點：研究大樓 Rm202

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石牌醫訊第330期

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

日期： 2004年3月14日- 2004年3月-20日

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人事通知

(國立陽明大學, 2004-03-20)

陽明電子報編輯小組

主旨：本校各專任老師若有接任委託執行計畫者，簽陳聘任專兼任研究助理案時，除緊急或特殊情形外，請循.....

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DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology

(2004-03-20)

Meng, CC

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Wu, TH

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Huang, GW

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電信工程研究所

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Institute of Communications Engineering

The realization of wideband amplifiers with shunt-series shunt-shunt dual-feedback configuration with commercially available 0.35-mum SiGe BiCMOS technology is reported. The SiGe HBT used here has f(t) of 67 GHz and BVceo of 2.5 V. The experimental results show that power gain is 10 dB from DC to 12 GHz for a shunt-series shunt-shunt wideband amplifier, with the help of the emitter capacitive peaking technique. Input- and output-return losses are better than 10 dB for the same frequency range. Noise figure increases from 8 to 12 dB for frequencies from 1 to 18 GHz. OP1db and OIP3 are 0 dBm and 12 dBm at 1 GHz, respectively. Total current consumption is 11 mA at 3.3 V supply voltage. (C) 2004 Wiley Periodicals, Inc.

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