The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties
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10.1016/j.mseb.2003.10.110
Abstract
Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks. (C) 2003 Elsevier B.V. All rights reserved.