The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties
| dc.citation.epage | 112 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 107 | en_US |
| dc.citation.volume | 107 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | Dimitrov, D | en_US |
| dc.contributor.author | Shieh, HPD | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:27Z | |
| dc.date.available | 2014-12-08T15:39:27Z | |
| dc.date.issued | 2004-03-15 | en_US |
| dc.description.abstract | Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks. (C) 2003 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.mseb.2003.10.110 | en_US |
| dc.identifier.issn | 0921-5107 | en_US |
| dc.identifier.journal | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.mseb.2003.10.110 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26946 | |
| dc.identifier.wosnumber | WOS:000220274200001 | |
| dc.language.iso | en_US | en_US |
| dc.subject | optical data storage | en_US |
| dc.subject | phase-change media | en_US |
| dc.subject | GeSbTe | en_US |
| dc.title | The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties | en_US |
| dc.type | Article | en_US |