標題: | The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties |
作者: | Dimitrov, D Shieh, HPD 光電工程學系 Department of Photonics |
關鍵字: | optical data storage;phase-change media;GeSbTe |
公開日期: | 15-三月-2004 |
摘要: | Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks. (C) 2003 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.mseb.2003.10.110 http://hdl.handle.net/11536/26946 |
ISSN: | 0921-5107 |
DOI: | 10.1016/j.mseb.2003.10.110 |
期刊: | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY |
Volume: | 107 |
Issue: | 2 |
起始頁: | 107 |
結束頁: | 112 |
顯示於類別: | 期刊論文 |