標題: The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties
作者: Dimitrov, D
Shieh, HPD
光電工程學系
Department of Photonics
關鍵字: optical data storage;phase-change media;GeSbTe
公開日期: 15-三月-2004
摘要: Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2003.10.110
http://hdl.handle.net/11536/26946
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2003.10.110
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 107
Issue: 2
起始頁: 107
結束頁: 112
顯示於類別:期刊論文


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