The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties

doi:10.1016/j.mseb.2003.10.110

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DC 欄位	值	語言
dc.contributor.author	Dimitrov, D	en_US
dc.contributor.author	Shieh, HPD	en_US
dc.date.accessioned	2014-12-08T15:39:27Z	-
dc.date.available	2014-12-08T15:39:27Z	-
dc.date.issued	2004-03-15	en_US
dc.identifier.issn	0921-5107	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.mseb.2003.10.110	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26946	-
dc.description.abstract	Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks. (C) 2003 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	optical data storage	en_US
dc.subject	phase-change media	en_US
dc.subject	GeSbTe	en_US
dc.title	The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.mseb.2003.10.110	en_US
dc.identifier.journal	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY	en_US
dc.citation.volume	107	en_US
dc.citation.issue	2	en_US
dc.citation.spage	107	en_US
dc.citation.epage	112	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000220274200001	-
dc.citation.woscount	15	-
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