Browsing by Issue Date, starting with "2004-05-10"

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Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
(2004-05-10)
Wu, N
;
Zhang, QC
;
Zhu, CX
;
Yeo, CC
;
Whang, SJ
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2 as the dielectric and TaN as the metal gate electrode. It is demonstrated that a surface annealing step in NH3 ambient before the HfO2 deposition could result in significant improvement in both gate leakage current and the equivalent oxide thickness (EOT). It was possible to achieve a capacitor with an EOT of 10.5 Angstrom and a leakage current of 5.02x10(-5) A/cm(2) at 1 V gate bias. X-ray photoelectron spectroscopy analysis indicates the formation of GeON during surface NH3 anneal. The presence of Ge was also detected within the HfO2 films. This may be due to Ge diffusion at the high temperature (similar to400 degreesC) used in the chemical-vapor deposition process. (C) 2004 American Institute of Physics.
High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
(2004-05-10)
Wu, YC
;
Chang, TC
;
Chang, CY
;
Chen, CS
;
Tu, CH
This investigation examines polycrystalline silicon thin-film transistors (TFTs) with multiple nanowire channels and a lightly doped drain (LDD). A device with an LDD structure exhibits low leakage current because the lateral electrical field is reduced in the drain offset region. Additionally, multiple nanowire channels can generate fewer defects in the polysilicon grain boundary and have more efficient NH3 plasma passivation than single-channel TFTs, further reducing leakage current. They exhibit superior electrical characteristics to those of single-channel TFTs, such as a higher ON/OFF current ratio (>10(8)), a better subthreshold slope of 110 mV/decade, an absence of drain-induced barrier lowering, and suppressed kink-effect. Devices with the proposed TFTs are highly promising for use in active-matrix liquid-crystal display technologies. (C) 2004 American Institute of Physics.
Preparation and phase transformation of highly ordered TiO2 nanodot arrays on sapphire substrates
(2004-05-10)
Chen, PL
;
Kuo, CT
;
Pan, FM
;
Tsai, TG
;
材料科學與工程學系
Ordered nanodot arrays of titanium oxide (TiO2) were prepared from an epitaxial Al/TiN bilayered film on a sapphire substrate by electrochemical anodization of the TiN layer using a nanoporous anodic aluminum oxide (AAO) film as the template. The nanodots with an average diameter of about 60 nm can faithfully duplicate the size, shape, and hexagonal pore pattern of the AAO nanopores. The phase development of the isolated TiO2 nanodots is very much different from TiO2 thin films and powders. After high temperature annealing, the nanodots are polycrystalline and consist of a mixed phase of anatase and rutile instead of single rutile phase. We expect that TiO2 nanodots with a single phase of anatase can be realized as long as the size of the nanodots is smaller than the critical nuclei size for rutile formation. (C) 2004 American Institute of Physics.
時域反射伸縮計
(2004-05-11)
林志平
;
湯士弘
一種時域反射伸縮計，係可藉訊號傳輸線連接至時域反射儀，其包括：正負極等體，包括一提供正極電流之導體以及另一相對提供負極電流通過之導體；傳輸接頭，與該正負極導體之第一端連接以形成該時域反射儀之傳輸系統，提供傳輸自時域反射儀所發出之電磁波；界面產生元件，設於該正負極等體之間以於該傳輸系統內部產生阻抗不連續界面；以及外部變位傳遞元件，與該界面產生元件連接且延伸至該傳輸系統外部，以將該傳輸系統內部之阻抗不連續界面變位與該傳輸系統外部之變位連動。
時域反射圓錐貫入器
(2004-05-11)
林志平
;
周家榮
;
湯士弘
一種時域反射圓錐貫入器，可與圓錐貫入試驗裝置結合且可接收來自一時域反射儀所發出之電磁波，該時域反射圓錐貫入器包括：一貫入件，可與該圓錐貫入試驗裝置結合；一傳輸接頭，固設於該貫入件內部，其一端具有正負極導體，另一端可結合並傳輸來自時域反射儀之電磁波；以及複數傳輸導體，固接於該貫入件外側，且分別導通至該傳輸接頭之正負極導體，用以傳輸該電磁波以形成電磁場於貫入件周遭。
A nano-switch regulates the activity of redox-responsive phenol sulfotransferase
(2004-05-14)
Yang, YS
;
Su, TM
;
交大名義發表
;
National Chiao Tung University
Deep depletion phenomenon of SrTiO3 gate dielectric capacitor
(2004-05-15)
Liu, CY
;
Chen, BY
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
SrTiO3 (STO) thin films were deposited on p-type silicon substrate by radio-frequency (rf) magnetron sputtering in an Ar-O-2 and Ar-N-2 mixed ambient to form metal/insulator/semiconductor (MIS) structure. We found the Schottky emission and Fowler-Nordheim tunneling mechanisms as responsible for the leakage current in the STO-based MIS structures at low and high electric fields under negative bias voltage, respectively. On the other hand, it was also observed that the generation current dominated the leakage mechanism at the high electric field under positive bias voltage due to the highly leaky insulator and lack of electrons. To maintain the leakage current at the higher electric field, the depletion width would broaden to generate more electrons, which is called deep depletion. Therefore, deep depletion was induced by high leakage current density under positive bias voltage. We also investigated the correlation between deep depletion and the leakage mechanism in STO-based gate dielectric capacitors under positive bias voltage to extract the generation lifetime of silicon substrates. The extracted generation lifetime can be used to examine the quality of silicon substrates after different processing conditions. (C) 2004 American Institute of Physics.
The design of a novel complementary metal oxide semiconductor detection system for biochemical luminescence
(2004-05-15)
Lu, U
;
Hu, BCP
;
Shih, YC
;
Wu, CY
;
Yang, YS
We designed a complementary metal oxide semiconductor (CMOS) chip with accompanied accessories as a system for the detections and quantifications of biochemical luminescence. This is the first of such instruments that has been reported. The semiconductor chip was manufactured through a 0.25 mum CMOS standard process. A current mirror was designed in integrated circuit (IC) to amplify the signal current that was induced by chemiluminescence. Horseradish peroxidase (HRP)-luminol-H2O2 system was used as an example to constitute a useful platform for coupling to chemiluminescence reactions which produce H2O2. Glucose-glucose oxidase (GOD) reaction was coupled with HRP-luminol-H2O2 reaction to demonstrate the ability of the novel CMOS base instrument for quantifying the biological luminescence of a variety of valuable clinical assays. Our results illustrated that the combination of the specifically designed CMOS IC and commercially available electronic devices established a simple and useful bioanalytical tool. (C) 2003 Elsevier B.V. All rights reserved.
Impact of air filter material on metal oxide semiconductor (MOS) device characteristics in HF vapor environment
(2004-05-15)
Hsiao, CW
;
Lou, JC
;
Yeh, CF
;
Hsieh, CM
;
Lin, SJ
Airborne molecular contamination (AMC) is becoming increasingly important as devices are scaled down to the nanometer generation. Optimum ultra low penetration air (ULPA) filter technology can eliminate AMC. In a cleanroom, however, the acid vapor generated from the cleaning process may degrade the ULPA filter, releasing AMC to the air and the surface of wafers, degrading the electrical characteristics of devices. This work proposes the new PTFE ULPA filter, which is resistant to acid vapor corrosion, to solve this problem. Experimental results demonstrate that the PTFE ULPA filter can effectively eliminate the AMC and provide a very clean cleanroom environment.
Companion matrices: reducibility, numerical ranges and similarity to contractions
(2004-05-15)
Gau, HL
;
Pei, YW
;
應用數學系
;
Department of Applied Mathematics
In this paper, we study some unitary-equivalence properties of the companion matrices. We obtain a criterion for a companion matrix to be reducible and show that the numerical range of a companion matrix is circular disc centered at the origin if and only if the matrix equals the (nilpotent) Jordan block. However, the more general assertion that a companion matrix is determined by its numerical range turns out to be false. We also determine, for an n x n matrix A with eigenvalues in the open unit disc, the defect index of a contraction to which A is similar. (C) 2004 Elsevier Inc. All rights reserved.
Computerized tooth profile generation and analysis of characteristics of elliptical gears with circular-arc teeth
(2004-05-15)
Chen, CF
;
Tsay, CB
;
機械工程學系
;
Department of Mechanical Engineering
This study describes rack cutters with circular-arc profile teeth to generate elliptical gears which rotate about one of their foci. A mathematical model for elliptical gears with circular-arc teeth is developed according to gear theory. The influence of the design parameters, such as the number of teeth, gear module, pressure angle at the pitch point and the major-axis, are investigated. The effects of the circular-arc radius of the rack cutter on both the undercutting of teeth and on pointed teeth of the generated circular-arc elliptical gear are also studied. Three numerical examples are presented to elucidate the generation of gear tooth profiles using the proposed mathematical model, and to investigate the phenomena of tooth undercutting and pointed teeth. (C) 2003 Published by Elsevier B.V.
Characterization of the signature of subwavelength variation from far-field irradiance
(2004-05-15)
Chu, SC
;
Chern, JL
;
光電工程學系
;
Department of Photonics
The dynamic signature of the subwavelength variation of a slit is shown to be determinable from far-field irradiance with a precision of better than 1 nm. One can increase the efficiency of measurement of the subwavelength's signature by adjusting the detection width over which the subwavelength variation is detected. The subwavelength variation of a rectangular aperture was also examined to show the general feasibility. (C) 2004 Optical Society of America
Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
(2004-05-15)
Chen, TF
;
Yeh, CF
;
Lou, JC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work examines the effects of grain boundaries on the performance and hot-carrier reliability of excimer-laser-annealed polycrystalline silicon thin film transistors (poly-Si TFTs) before and after NH3 plasma treatment. Self-aligned poly-Si TFTs, whose channel regions include a 150 nm thick laser-crystallized poly-Si layer with small grains and a 100 nm thick layer with large grains, are fabricated. Other TFTs, with large grains throughout their channels, are fabricated nearby for comparison. The trapping of electrons at grain boundaries in the drain junction creates strong local electric fields that boost the leakage current, cause the threshold voltage to decline as the drain bias increases, enhance the kink effect in the output characteristics, and degrade the hot-carrier reliability of devices. When static hot-carrier stress is applied to nonhydrogenated poly-Si TFTs for less than 10(4) s at V-GS=10 V and V-DS=20 V, hot holes are injected into the gate oxide at the same time trap states are created in the drain junction. The screening effect is observed when the same stress is applied to devices that have many grain boundaries in their drain junctions. NH3 plasma treatment prevents the trapping of electrons at grain boundaries. The performance of hydrogenated poly-Si TFTs improves, but the hot-carrier reliability of those TFTs with large grains in their drain junctions degrades. The hydrogenation causes a trade-off between the electrical characteristics and the hot-carrier reliability, and introduces irregular humps in the subthreshold region. (C) 2004 American Institute of Physics.
Transmission characteristics of smiling pattern resonators
(2004-05-15)
Hsu, YJ
;
Chern, JL
;
光電工程學系
;
Department of Photonics
We propose and experimentally verify a novel metallic-microstructure composite that consists of smiling-pattern resonators to broaden the bandwidth of resonance, in contrast to the well known narrow-band split ring resonators in the field of meta-materials and left-handed negative-index media. The underlying idea is to introduce multiple interaction scales to the resonator. Our microwave analog experiment shows that the range of resonant frequencies could also be extended apparently with double resonance bands. Furthermore, this smiling-Pattern resonator is superior in manufacturing for its simplicity in structure.
快速分配音訊位元之方法
(2004-05-16)
李俊毅
;
莊孝強
;
方耀諄
;
王俊能
;
蔣迪豪
一種快速分配音訊位元之方法，主要係以整體量化增益(globalgain)以及所使用之位元量(bit)間的線性關係(linearrelationship)建立線性模型，並配合平行化之量化誤差計算而取得音頻編碼所需之位元量，藉以改善傳統包括外部(量化雜訊控制)、內部(碼率控制)雙重回圈耗功費時之運算過程，提升整體的編碼速度，並保持一定水平之音訊品質。
九十二學年度第二學期臨牙所‧碩士班專題討論期初報告
(國立陽明大學, 2004-05-17)
陽明電子報編輯小組
報告題目：Torsional properties of rotary nickel-titanium endodontic files after repeated uses 演講時間：93年5月18日 (二) 中午12:30 演講地點：牙醫系館302教室
腦科學中心演講公告
(國立陽明大學, 2004-05-17)
陽明電子報編輯小組
演講主題：Beyond the genome: molecular imaging in vivo with microPET 演講時間：93年5月18日 (二) 中午12:00 演講地點：腦科學中心 (陽明護理館 301會議室)
三十而立‧陽明創校三十週年系列報導之二
(國立陽明大學, 2004-05-17)
陽明電子報編輯小組
校史及三十週年紀念專刊編輯小組於 3月30日上午9：00，於行政大樓三樓會議室召開工作籌備會第一次會議。
陽明精神．無遠弗屆
(國立陽明大學, 2004-05-17)
陽明電子報編輯小組
自從外交替代役這個制度實行以來，陽明從不缺席。不但已經有四位同學剛從學校畢業就加入服務行列，也有在榮總受完骨科專科訓練的醫師，申請到屏東基督教醫院服務，再轉任由該醫院支持的馬拉威醫療團
畢業典禮學位禮服借用事宜
(國立陽明大學, 2004-05-17)
陽明電子報編輯小組
＜保管組提供＞有關本校九十二學年度畢業典禮學位服借用、歸還時間地點及尺寸圖示等資訊，請查閱保管組網頁http://www.ym.edu.tw/ind/