Browsing by Issue Date, starting with "2007-08-17"
Now showing 1 - 20 of 59255
- Results Per Page
- Sort Options
Item type:Item, Unique pitch evolution in the Smectic-C-alpha(*) phase(2007-08-17) ;Liu, Z. Q. ;McCoy, B. K. ;Wang, S. T. ;Pindak, R.Caliebe, W.Employing resonant x-ray diffraction, we observed unique pitch evolutions in the smectic-C-alpha* phase in mixtures of two antiferroelectric liquid crystals. Our results show that the pitch in this phase continuously evolves across 4 layers, contradicting a theoretical model that predicts that the smectic-C-FI2* phase intervenes in the smectic-C-alpha* phase. The phase sequences we found can be explained by another model that includes one type of long-range interaction among smectic layers.Item type:Item, COLL 483-Fabrication of phosphated TiO2 through calcination of TOPO-capped nanocrystals(2007-08-19) ;Chang, Sue-min ;Hou, Chieh-yao ;環境工程研究所Institute of Environmental EngineeringItem type:Item, ENVR 173-Photoactivity of TOPO-capped TiO2 nanocrystals toward the degradation of endocrine disrupting chemicals(2007-08-19) ;Chang, Sue-min ;Lo, Pin-han ;Hou, Chieh-Yao ;環境工程研究所Institute of Environmental EngineeringItem type:Item, FUEL 241-Preparation of Palladium-membrane by electroplating on AISI 316 porous stainless steel supports and its use for methanol steam reformer(2007-08-19) ;Rei, Min Hon ;Chen, Shin Chung ;Tu, George Chia ;Hung, Chia Yeh材料科學與工程學系Item type:Item, COMP 105-Prediction of Raman spectra in novel polyyne@SWNT peapods using dispersion-augmented density-functional-tight-binding(2007-08-19) ;Irle, Stephan ;Witek, Henryk A. ;Shinohara, Hisanori ;Morokuma, Keiji應用化學系Item type:Item, COLL 272-Helical morphologies in the self-assembly of chiral Schiff-based rod-coil amphiphiles(2007-08-19) ;Lin, Tz-Feng ;Ho, Rong-Ming ;Sung, Chien-Hung ;Hsu, Chain-Shu應用化學系Item type:Item, ANYL 456-Fabrication of novel molecularly imprinted alumina-silica using non-hydrolytic sol-gel method for trace phosphine detection(2007-08-19) ;Chang, Sue-min ;Hou, Ching-jung ;Yen, Shao-Yi ;Li, Shou-Nan環境工程研究所Item type:Item, INOR 65-Effect of surface and lattice vanadium ions on the physicochemical and photocatalytic properties of porous TiO2(2007-08-19) ;Chang, Sue-min ;Liu, Wei-Szu ;Sung, Pin-Hsin ;環境工程研究所Institute of Environmental EngineeringItem type:Item, Volume shrinkages and mechanical properties of various fiber-reinforced hydroxyethyl methacrylate-polyurethane/unsaturated polyester composites(2007-08-19) ;Lin, Shih-Pin ;Shen, Jia-Hong ;Han, Jin-Lin ;Lee, Ya-RongYeh, Jen-TautItem type:Item, Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal(2007-08-20) ;Chen, Wei-Ren ;Chang, Ting-Chang ;Liu, Po-Tsun ;Yeh, Jui-LungTu, Chun-HaoThe formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.Item type:Item, Sr3B2O6 : Ce3+,Eu2+: A potential single-phased white-emitting borate phosphor for ultraviolet light-emitting diodes(2007-08-20) ;Chang, Chun-Kuei ;Chen, Teng-Ming ;應用化學系Department of Applied ChemistryThe Ce3+/Eu2+ coactivated Sr3B2O6 phosphors exhibit varied hues from blue through white and eventually to yellow-orange by resonance-type energy transfer from Ce3+ to Eu2+ and tuning the relative proportion of Ce3+/Eu2+ properly. The authors have demonstrated that electric dipole-dipole interaction dominates the energy transfer mechanism in Sr3B2O6:Ce3+,Eu2+ phosphor, and the critical distance of energy transfer has been estimated to be about 30 A by both spectral overlap and concentration quenching methods. They have also shown that under the excitation of UV radiation, white light is generated by coupling 434 and 574 nm emission bands attributed to Ce3+ and Eu2+ radiations, respectively.Item type:Item, 月亮洗頭(2007-08-20)管管Item type:Item, Micellization and the surface hydrophobicity of amphiphilic poly(vinylphenol)-block-polystyrene block copolymers(2007-08-20) ;Tung, Pao-Hsaing ;Kuo, Shiao-Wei ;Chan, Shih-Chien ;Hsu, Chih-HaoWang, Chih-FengThe self-assembly of PVPh-b-PS in different solvents was studied. Upon replacing toluene by THF as the solvent, the morphology of the resulting aggregates change from core-shell spheres, rod-like micelles and vesicles to onion-like aggregates. With increasing block copolymer concentration, morphologies such as honeycomb-like films, surfaces of aggregated large porous spheres, or pincushion-like spheres with protruding tubular vesicle aggregates are observed. These surface-patterned films show significantly enhanced hydrophobicity. The results suggest that a superhydrophobic . behavior can be achieved, with a maximum contact angle of 158 degrees, by using the pincushion-like micellar structure.Item type:Item, Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes(2007-08-20) ;Chang, Chia-Hao ;Chien, Chao-Hsin ;Yang, Jung-Yen ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsIn this letter, the authors propose a practical and reliable approach-using deposited multiwalled carbon nanotubes (MWCNTs) as source and drain electrodes-for reducing the contact resistance (R-c) in pentacene-based bottom-contact thin-film transistors. The value of R-c of the devices was closely linked to the resultant length of the deposited MWCNTs; the lowest value was 3x10(8) Omega mu m. The largest saturation mobility was 0.14 cm(2)/V s; this value reached up to three times higher when the threshold voltage was determined using the maximum transconductance (G(m,max)) extrapolation method, rather than the constant current method. The on/off ratio was more than 10(6). (C) 2007 American Institute of Physics.Item type:Item, 交大e-News第008期(2007-08-20) ;Secretariat國立交通大學秘書室Item type:Item, Efficient deep blue emitters for organic electroluminescent devices(2007-08-20) ;Ho, Meng-Huan ;Wu, Yao-Shan ;Wen, Shih-Wen ;Chen, Teng-MingChen, Chin H.Highly efficient deep blue organic light emitting devices have been fabricated with a 4-(styryl)biphenyl-core based fluorescent dopant (SK-1) in the wide band gap 2-methyl-9,10-di(1-naphthyl)anthracene (alpha,alpha-MADN) host system which achieved an electroluminescence efficiency of 5.0 cd/A and an external quantum efficiency of 4.2% at 20 mA/cm(2) with a saturated blue Commission Internationale de l'Eclairage coordinates of (0.15, 0.14) and a half-decay lifetime of 8000 h at an initial brightness of 100 cd/m(2). The current efficiency and electroluminescent color of SK-1 doped devices have been shown to be essentially immune to drive current density. (C) 2007 American Institute of Physics.Item type:Item, Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer(2007-08-21) ;Chang ;Edward Y. ;Luo ;GuangliYangThis invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemical vapor deposition (MOCVD).The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaxial layer, such as Si0.1Ge0.9in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si01.Ge0.9due to the large mismatch between this layer and Si substrate.Furthermore, a subsequent 0.8 μm Si0.05Ge0.95layer, and/or optionally a further 0.8 μm Si0.02Ge0.98layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaxial layers.Finally, a GaAs epitaxial layer is grown on said Ge film by using MOCVD.Item type:Item, Asynchronous first-in-first-out cell(2007-08-21) ;Chu ;Yeh-Lin ;HwangWeiThe present invention discloses an asynchronous first-in-first-out cell, wherein modified Muller C elements are used to reduce the complexity of the circuit of the asynchronous first-in-first-out cell; the asynchronous first-in-first-out cell of the present invention not only can be reusable, but also can apply to a single-supply-voltage system with a single clock frequency or multiple clock frequencies and a multiple-supply-voltage system with a single clock frequency or multiple clock frequencies. Further, when the asynchronous first-in-first-out cell of the present invention is applied to the interface circuit of a dual-supply-voltage 16-point radix-22GALS-based FFT architecture, considerable power saving and latency reduction can be achieved.Item type:Item, Self-alignment manufacturing method of the microlens and the aperture using in optical devices(2007-08-21) ;Chiu ;Yi ;Hsu ;Wen SyangChangThe present invention discloses a self-alignment manufacturing method of a microlens and an aperture using in an optical device. The method manufactures the aperture and the circular opening in the opaque film on a transparent substrate, and utilizes the self-alignment backside exposure technology to precisely integrate the aperture and the microlens made by macromolecule material without any combination step. The claimed method is simpler than conventional technology and can precisely align and integrate the microlens and the aperture with a continuous batch manufacture. Since the aperture and the circular opening are concentric circles and formed in same step, the microlens and the aperture can be precisely aligned with the backside exposure. The claimed invention can effectively improve the optical resolution and efficiency of the optical access and measurement devices.Item type:Item, 可自動作曲的方法及系統(2007-08-21) ;陳穎平 ;吳鎧竹 ;吳祖佑 ;傅道揚陳錦德習知之所謂「音樂創作」係由受過專業音樂訓練者,在熟悉樂理、各種樂器特性與各種音樂風格情況下的一種心智活動,而一般未受過音樂訓練者,無法輕易自行創作屬於個人的音樂。本專利揭示了一種利用內建有人工智慧專家系統軟體系統的方法與系統,可自動學習使用者對各種音樂旋律、節奏、風格之偏好,並依據使用者個人喜好回饋資訊,自動調整音樂之旋律、節奏、風格,以產生屬於使用者個人的音樂。