Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes

Abstract

In this letter, the authors propose a practical and reliable approach-using deposited multiwalled carbon nanotubes (MWCNTs) as source and drain electrodes-for reducing the contact resistance (R-c) in pentacene-based bottom-contact thin-film transistors. The value of R-c of the devices was closely linked to the resultant length of the deposited MWCNTs; the lowest value was 3x10(8) Omega mu m. The largest saturation mobility was 0.14 cm(2)/V s; this value reached up to three times higher when the threshold voltage was determined using the maximum transconductance (G(m,max)) extrapolation method, rather than the constant current method. The on/off ratio was more than 10(6). (C) 2007 American Institute of Physics.