Browsing by Issue Date, starting with "2007-12-11"

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用於更新低密度配類核對（LDPC）碼解碼器之核對節點的方法及其裝置
(2007-12-11)
李鎮宜
;
林建青
;
林凱立
;
張錫嘉
本發明提供一種用於更新低密度配類核對(LDPC)碼解碼器之核對節點的方法，包含下列步驟：排序連結到該 LDPC碼解碼器之核對節點的所有資料以獲得最小絕對值及次最小絕對值；以及比較各該所有資料與該最小絕對值及該次最小絕對值，其中若所比較之該資料相等於該最小絕對值且相等於該次最小絕對值時，則更新連結到該核對節點的該比較之資料，以及提供一種使用該方法之裝置。
多波長發光元件之奈米粒結構及其製法
(2007-12-11)
陳衛國
;
柯文政
本發明提供一種具有奈米粒之多波長發光元件結構及製法，主要特徵係該發光元件結構具有多層堆疊主動層，該主動層之每一對堆疊層包含低能隙位能井層4與高能隙位能障層3，該多層堆疊主動層內至少一堆疊層內具有奈米粒結構，其中該多層堆疊主動層所發光波長可由堆疊層內部分(或全部)含奈米粒之發光波長；或堆疊層內部分(或全部)不含奈米粒之發光波長所組成。另一種結構中，多層堆疊主動層結構之部份(或全部)發光波長用以激發一種(含)以上螢光波長之螢光體，此結構(如：螢光轉換發光元件結構)之發光波長可以由部分多層堆疊主動層本身發光與部分(或全部)螢光體之發光組成。
化合物半導體元件之銅金屬化之歐姆接觸電極
(2007-12-11)
張翼
;
陳克弦
;
李承士
一種化合物半導體元件之銅金屬化之歐姆接觸電極，經過電子束蒸鍍沈積鈀(Pd)層、鍺(Ge)層及銅(Cu)層於化合物半導體元件上所組成，接著利用浮離製程(Lift-off)去除多餘之金屬及光阻，最後進行快速高溫退火過程而形成歐姆接觸電極。其中低電阻值之歐姆接觸電極係利用調整鈀層、鍺層及銅層之厚度及配合退火溫度而形成，可應用於銅金屬化製程，有效增加化合物半導體元件的散熱特性，且使生產成本降低。
Facial washer
(2007-12-11)
Sha
;
Yung-Jye
;
Liao
;
Wen-Chin
A facial washer is disclosed to include a basin, which has a plurality of water outlets symmetrically arranged on the inside wall thereof at two opposite lateral sides, a plurality of adjustable jet nozzles, which are respectively mounted in the water outlets inside the basin for ejecting a respective stream of water, each having a fixed ball socket and a ball valve rotatably supported in the ball socket for guiding water out of the respective water outlet in the form of a stream of water, and a control device for controlling the supply of water to the adjustable jet nozzles.
OBJECT-BASED IMAGE SEARCH SYSTEM AND METHOD
(2007-12-13)
Fu, Hsin Chia
;
Xu, Yeong Yuh
The present invention discloses an object-based image search system and method, whereby a user may visually specify query objects for retrieving relevant images without using any image-segmenting software tool. The method of the present invention comprises: specifying target feature points from sample images which are displayed in an image query interface and determining logic relationships of the target feature points; utilizing a feature-point checking program to correlate the target feature points with target objects; utilizing a feature-similarity calculating program to find out the images relevant to the target objects via the image feature parameters stored in a feature database; arranging and presenting the relevant images in sequence.
Gate controlled field emission triode and process for fabricating the same
(2007-12-13)
Tseng, Tseung-Yuen
;
Lee, Chia-Ying
;
Li, Seu-Yi
;
Lin, Pang
This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.
管管作品三首
(2007-12-15)
管管
Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayer
(2007-12-15)
Ho, Chia-Cheng
;
Chiou, Bi-Shiou
;
Chang, Li-Chun
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
The microstructure, crystalline phase, surface morphology, and dielectric properties of a sandwich structure of Ba0.7Sr0.3TiO3/Cr/ Ba0.7Sr0.3TiO3 (BST/Cr/BST) dielectric are characterized to understand the influence of the nano-Cr interlayer. BST dielectrics inserted with Cr film of thickness ranged from 2 nm to 15 nm all show the crystalline cubic phase. However, TiO2 layer is formed on the upper BST layer after the BST/Cr/BST dielectrics are annealed at 900 degrees C in O-2 atmosphere for one hour. In this study, TEM, AFM, SEM, X-ray diffraction, and AES are employed to investigate the microstructure evolution of the BST/Cr/BST dielectrics after annealing. The correlations between the microstructure and the dielectric properties of the Pt/BST/Cr/BST/Pt capacitors with various Cr thicknesses are explored. (C) 2007 Elsevier B.V. All tights reserved.
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
(2007-12-15)
Lin, Chih-Yang
;
Lin, Chun-Chieh
;
Huang, Chun-Hsing
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.
Performance of sol-gel deposited Zn1-xMgxO films used as active channel layer for thin-film transistors
(2007-12-15)
Tsay, Chien-Yie
;
Cheng, Hua-Chi
;
Wang, Min-Chi
;
Lee, Pee-Yew
;
Chen, Chia-Fu
ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1-x ,MgxO (x= 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 degrees C for 10 min and then annealed at 500 degrees C for I h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92%, an increase of similar to 15% over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1-x .,MgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm(2) /V s, a threshold voltage of 6.0 V, and an on/off ratio more than 10(7). (c) 2007 Elsevier B.V. All rights reserved.
管管作品三首
(2007-12-15)
管管
管管作品三首
(2007-12-15)
管管
管管作品三首
(2007-12-15)
管管
Analytical solution for groundwater flow in an anisotropic sloping aquifer with arbitrarily located multiwells
(2007-12-15)
Chang, Ya-Chi
;
Yeh, Hund-Der
;
環境工程研究所
;
Institute of Environmental Engineering
This paper presents a new analytical solution to describe the hydraulic head distribution and flow system in an anisotropic unconfined aquifer with a sloping bed and arbitrarily located multiwells under transient recharge. Unlike the existing analytical solutions for delineating the capture zones, the solution presented in this study is easy and convenient to calculate flow field in some complicated systems, and it can provide useful information for the pump-and-treat design. In addition, the presented solution may have the possible application in evaluating the sensitivity of hydrogeological parameters, or estimating the hydraulic parameters when coupled with an optimization approach to analyze the aquifer data. (c) 2007 Elsevier B.V. All rights reserved.
管管作品三首
(2007-12-15)
管管
Fort-nation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application
(2007-12-15)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tu, Chun-Hao
;
Chi, Feng-Weng
The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define "1" and "0" states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device. (C) 2007 Elsevier B.V. All rights reserved.
The globally Bi-3*-connected property of the honeycomb rectangular torus
(2007-12-15)
Teng, Yuan-Hsiang
;
Tan, Jimmy J. M.
;
Hsu, Lih-Hsing
;
資訊工程學系
;
Department of Computer Science
The honeycomb rectangular torus is an attractive alternative to existing networks such as mesh-connected networks in parallel and distributed applications because of its low network cost and well-structured connectivity. Assume that m and n are positive even integers with n >= 4. It is known that every honeycomb rectangular torus HReT(m, n) is a 3-regular bipartite graph. We prove that in any HReT(m, n), there exist three internally-disjoint spanning paths joining x and y whenever x and y belong to different partite sets. Moreover, for any pair of vertices x and y in the same partite set, there exists a vertex z in the partite set not containing x and y, such that there exist three internally-disjoint spanning paths of G - {z} joining x and y. Furthermore, for any three vertices x, y, and z of the same partite set there exist three internally-disjoint spanning paths of G - {z} joining x and y if and only if n >= 6 or m = 2. (C) 2007 Elsevier Inc. All rights reserved.
管管作品三首
(2007-12-15)
管管
管管作品三首
(2007-12-15)
管管
Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure
(2007-12-15)
Lin, Y. C.
;
Chiu, C. H.
;
Fan, W. C.
;
Chia, C. H.
;
Yang, S. L.
The vibrational, electronic, and crystalline properties of n-type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2x10(15) to 1.8x10(18) cm(-3) are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are analyzed using the Raman scattering efficiency and the dielectric function to obtain the electron densities and mobility. The splitting of the transverse-optical (TO) phonon and the redshift of the chlorine-related impurity vibration mode are clearly observed when pressure is applied. The semiconductor-to-metal phase transition pressure of ZnSe:Cl layers declines as the carrier concentration increases, indicating that n-type doping reduces crystal stability. Additionally, the pressure-induced weakening of the longitudinal-optical-phonon-plasmon coupling efficiency suggests that pressure tends to degrade the n-type characteristic of ZnSe:Cl because of the emergence of the new deep donorlike state. (c) 2007 American Institute of Physics.