Browsing by Issue Date, starting with "2009-11-22"

Now showing 1 - 20 of 49336

《最惡》　The Worst
(2009-11-22)
陳宣聿
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Department of Communication and Technology
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傳播與科技學系
《最惡》
黑白之間　《一的力量》
(2009-11-22)
傅如尉
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Department of Communication and Technology
;
傳播與科技學系
故事發生於二次世界大戰後的南非，五歲的皮凱在這裡出生，但他不是南非人，也不是黑人，而是南非人的天敵「紅脖子」英國人。以此身分在種族歧視盛行的時代之下，皮凱在學校受到眾人的暴力欺凌，直到在火車上遇見拳擊手哈皮，讓他領悟到「一的力量」，這句話不僅改變了皮凱的一生，同時也深深地影響了他身邊的人。
Happy Birthday To U
(2009-11-22)
宋宜玲
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Department of Communication and Technology
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傳播與科技學系
Happy Birthday To U : ) Wish U a wonderful life
有機綠市集　看見農友與自然
(2009-11-22)
徐瑩峰
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Department of Communication and Technology
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傳播與科技學系
每個月第二個星期六，在清華大學成功湖畔「竹蜻蜓綠市集」熱鬧開張。來自桃竹苗地區，以自然工法、有機方式耕種的農民，帶著自己栽種的新鮮產品，和消費者直接面對面地互動，拉近雙方距離，更推廣「在地生活、在地消費」的環保概念。「綠市集」提供了一個交易平台，幫助這些堅持以有機方式耕種的小農們銷售產品，也讓在地社區的民眾們，接觸更多綠色消費的生活理念。
協尋男童　交大學生總動員
(2009-11-22)
許庭瑜
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Department of Communication and Technology
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傳播與科技學系
上週日交大學生透過BBS的NCTU_TALK板發起校園搜尋走失的彭小弟弟，除了實際出面搜尋之外，也藉由BBS的即時性來達到傳遞最新資訊，更自發性的回報搜索結果，並由板主統整以利其他人能更迅速瞭解狀況，或者幫忙。
夢想建築師　公共建築新出發
(2009-11-22)
林穎瑄
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Department of Communication and Technology
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傳播與科技學系
「建築不是兒戲，不像唱歌也不像畫畫，不是隨時都可以停止。建築，需要深思熟慮。」建築，是生活中的實體容器，具象化的出現在各個國家、都市、鄉村之中，呈現各式各樣生活的的顯像。
咬一口　粉紅吉他的輕鬆派
(2009-11-22)
黃湞尹
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Department of Communication and Technology
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傳播與科技學系
粉紅吉他拖比兔，一個包著BOSSA NOVA餡料的民謠派皮，淋上鄉村藍調醬，兔子也可以吃的清爽音樂派，你也一定要嚐嚐！
《有禮的謊言》　戳破禮貌的假象
(2009-11-22)
吳雨璇
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Department of Communication and Technology
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傳播與科技學系
這本書由作者的過去和現在交織而成。十二歲那年，她的童年隨著母親的自縊結束，父親的打罵和繼母的謊言中傷使她總是渴望逃離這個家，母親去世四年後作者遷居美國，此後便定居於此。在這樣的背景之下，作者寫下了這本書，用她樸實的文字，加以日、西文化的衝擊，精緻而銳利地刻劃出日本文化深沉的一面，寫下十二篇關於語言、表達和女人的文章。
顛峰時刻　光復路成車龍
(2009-11-22)
葉東瑜
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Department of Communication and Technology
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傳播與科技學系
光復路因為連接著國道高速公路和新竹市區而成為新竹的交通樞紐，又因此有許多客運會在這條路上載客，使得顛峰時間的光復路十分擁擠。
留不住的事
(2009-11-22)
張雅晴
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Department of Communication and Technology
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傳播與科技學系
女孩過了二十一年才發現，原來這個世界上，真的有東西是不管怎麼努力都留不住的，那就是生命。
《睜開左眼》攝影記者訴悲歌
(2009-11-22)
林乃絹
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Department of Communication and Technology
;
傳播與科技學系
《睜開左眼》是台灣第一部屬於電視攝影記者的紀錄片，前資深電視新聞攝影記者李惠仁，透過鏡頭記錄四名攝影記者的工作，帶著觀眾剖析電視新聞攝影記者在媒體產業當中的樣貌。
橋仔頭，蔗園邊上開花朵
(2009-11-22)
陳維平
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Department of Communication and Technology
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傳播與科技學系
「早期甘蔗交會社，家己有種袂使食」、「第一憨，種甘蔗呼會社磅！」……，這些流傳於台灣市井間的俗諺，隨著製糖產業的時空變遷而被淡忘。走進台灣第一座現代化的機械式製糖工廠──橋仔頭糖廠，當年盛氣運轉的鍋爐早已歇止、斑駁。廠址旁的一小區蔗園，為糖的味道保留最後一個記憶追尋的源頭；而蔗園邊上的小花朵、和各具特色的面容，則重新佈展了今日橋仔頭糖廠的路徑線索。
《小店》　富人窮生活的幸福
(2009-11-22)
陳柏臻
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Department of Communication and Technology
;
傳播與科技學系
猶太家庭與麵包店的故事。
重看安康　希望正發酵
(2009-11-22)
鄭心舜
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Department of Communication and Technology
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傳播與科技學系
「我平常不會過去，感覺那邊的人好像怪怪的。」居住在台北市文山區的魏宗賢道出了附近居民對於安康社區的初步印象。
第六十三期總編輯的話
(2009-11-22)
陳怡
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Department of Communication and Technology
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傳播與科技學系
「休息，是為了走更遠的路。」記者群休刊一周後再出發，第一組編輯台也重返崗位，希望我們和本期的十四篇喀報作品能受到大家喜愛。
Increasing organic vertical carrier mobility for the application of high speed bilayered organic photodetector
(2009-11-23)
Tsai, Wu-Wei
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Chao, Yu-Chiang
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Chen, En-Chen
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Zan, Hsiao-Wen
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Meng, Hsin-Fei
The direct influence of the vertical carrier mobility on the frequency response of bilayered organic photodiodes (PDs) is investigated for the first time. With fullerene as the acceptor material, changing vertical hole mobility from 2.3x10(-5) to 2.8x10(-4) cm(2)/V s increases PD bandwidth from 10 to 80 MHz under a 4 V operation. The influence of deposition rate on vertical hole mobility of pentacene film is also discussed. Our results facilitate the application of bilayered organic PDs on the detection of very-high-frequency optical signals.
Interfacial layer dependence on device property of high-kappa TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness
(2009-11-23)
Chen, W. B.
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Chin, Albert
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We have investigated the device property dependence of high dielectric-constant (high-kappa) TiLaO epitaxial-Ge/Si n-type metal-oxide-semiconductor (n-MOS) capacitors on different GeO(2) and SiO(2) interfacial layers. Large capacitance density of 3.3 mu F/cm(2), small equivalent-oxide thickness (EOT) of 0.81 nm and small C-V hysteresis of 19 mV are obtained simultaneously for MOS capacitor using ultrathin SiO(2) interfacial layer, while the device with ultrathin interfacial GeO(2) shows inferior performance of larger 1.1 nm EOT and poor C-V hysteresis of 93 mV. From cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy analysis, the degraded device performance using GeO(2) interfacial layer is due to the severe Ge outdiffusion, thinned interfacial GeO(2) and thicker gate dielectric after 550 degrees C rapid-thermal anneal.
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
(2009-11-23)
Lo, M. -H.
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Tu, P. -M.
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Wang, C. -H.
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Cheng, Y. -J.
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Hung, C. -W.
A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1x10(9) to 4x10(7) cm(-2). The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
Power controlling apparatus applied to biochip and operating method thereof
(2009-11-24)
Wu
;
Chung-Yu
;
Lin
;
Po-Kang
;
Lin
The invention discloses a power controlling apparatus for a biochip including M regions. Each region includes a plurality of cells respectively. The power controlling apparatus includes a pulse generating module, a combinational circuit, and M controlling modules. The pulse generating module generates a pulse. The combinational circuit receives the pulse and generates M controlling signals. Each controlling signal has a predetermined phase which is different from the phase of the other controlling signal. The M controlling modules are electrically connected to the combinational circuit. Each of the M controlling signals corresponds to and activates one of the M controlling modules to selectively power on one corresponding region of the M regions. The cells in the corresponding region which is powered have an action potential refractory time that is longer than the power-on interval of the corresponding region.
Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi(2) Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth
(2009-11-24)
Lin, Huang-Kai
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Cheng, Hsin-An
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Lee, Chi-Young
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Chiu, Hsin-Tien
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應用化學系
A C54-TiSi(2) film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiCl(x)((g)), generated by reacting between TiCl(4(g)) and Ti((s)) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30-80 rim, length several micrometers) on a C54-TiSi(2) film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi(2) film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E(o) and field enhancement factor beta, of the vertically grown TiSi NWs were determined to be 5.25 V mu m(-1) and 876, respectively.