Browsing by Issue Date, starting with "2009-11-23"

Now showing 1 - 20 of 49321

Increasing organic vertical carrier mobility for the application of high speed bilayered organic photodetector
(2009-11-23)
Tsai, Wu-Wei
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Chao, Yu-Chiang
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Chen, En-Chen
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Zan, Hsiao-Wen
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Meng, Hsin-Fei
The direct influence of the vertical carrier mobility on the frequency response of bilayered organic photodiodes (PDs) is investigated for the first time. With fullerene as the acceptor material, changing vertical hole mobility from 2.3x10(-5) to 2.8x10(-4) cm(2)/V s increases PD bandwidth from 10 to 80 MHz under a 4 V operation. The influence of deposition rate on vertical hole mobility of pentacene film is also discussed. Our results facilitate the application of bilayered organic PDs on the detection of very-high-frequency optical signals.
Interfacial layer dependence on device property of high-kappa TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness
(2009-11-23)
Chen, W. B.
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Chin, Albert
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We have investigated the device property dependence of high dielectric-constant (high-kappa) TiLaO epitaxial-Ge/Si n-type metal-oxide-semiconductor (n-MOS) capacitors on different GeO(2) and SiO(2) interfacial layers. Large capacitance density of 3.3 mu F/cm(2), small equivalent-oxide thickness (EOT) of 0.81 nm and small C-V hysteresis of 19 mV are obtained simultaneously for MOS capacitor using ultrathin SiO(2) interfacial layer, while the device with ultrathin interfacial GeO(2) shows inferior performance of larger 1.1 nm EOT and poor C-V hysteresis of 93 mV. From cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy analysis, the degraded device performance using GeO(2) interfacial layer is due to the severe Ge outdiffusion, thinned interfacial GeO(2) and thicker gate dielectric after 550 degrees C rapid-thermal anneal.
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
(2009-11-23)
Lo, M. -H.
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Tu, P. -M.
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Wang, C. -H.
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Cheng, Y. -J.
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Hung, C. -W.
A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1x10(9) to 4x10(7) cm(-2). The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
Power controlling apparatus applied to biochip and operating method thereof
(2009-11-24)
Wu
;
Chung-Yu
;
Lin
;
Po-Kang
;
Lin
The invention discloses a power controlling apparatus for a biochip including M regions. Each region includes a plurality of cells respectively. The power controlling apparatus includes a pulse generating module, a combinational circuit, and M controlling modules. The pulse generating module generates a pulse. The combinational circuit receives the pulse and generates M controlling signals. Each controlling signal has a predetermined phase which is different from the phase of the other controlling signal. The M controlling modules are electrically connected to the combinational circuit. Each of the M controlling signals corresponds to and activates one of the M controlling modules to selectively power on one corresponding region of the M regions. The cells in the corresponding region which is powered have an action potential refractory time that is longer than the power-on interval of the corresponding region.
Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi(2) Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth
(2009-11-24)
Lin, Huang-Kai
;
Cheng, Hsin-An
;
Lee, Chi-Young
;
Chiu, Hsin-Tien
;
應用化學系
A C54-TiSi(2) film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiCl(x)((g)), generated by reacting between TiCl(4(g)) and Ti((s)) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30-80 rim, length several micrometers) on a C54-TiSi(2) film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi(2) film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E(o) and field enhancement factor beta, of the vertically grown TiSi NWs were determined to be 5.25 V mu m(-1) and 876, respectively.
Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi2 Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth
(2009-11-24)
Lin, Huang-Kai
;
Cheng, Hsin-An
;
Lee, Chi-Young
;
Chiu, Hsin-Tien
;
應用化學系
A C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiClx((g)), generated by reacting between TiCl4(g) and Ti-(s) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30-80 rim, length several micrometers) on a C54-TiSi2 film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi2 film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E-o and field enhancement factor beta, of the vertically grown TiSi NWs were determined to be 5.25 V mu m(-1) and 876, respectively.
海外服務危機處理與團隊管理
(2009-11-25)
丁元亨
;
林念慈
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開放教育推動中心
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Open Education Office
課程日期： 2009年11月25日(三) 演講人：丁元亨先生、林念慈小姐內容摘要：在本週課程中，講師向同學們說明海外志工服務可能面臨到的「內部衝突」與「外部危機」，以案例的方式和同學們討論，當志工團隊入駐當地，哪些條件可能依當時的情況作彈性變更，哪些原則卻是不可撼動的？內容：影音實況影音(*.flv檔) 實況影音(*.wmv檔)
Organic-semiconductor-based infrared receiving device
(2009-11-26)
Meng, Hsin-Fei
;
Horng, Sheng-Fu
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Yang, Chia-Ming
An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.
Reaction Dynamics of O((1)D,(3)P) + OCS Studied with Time-Resolved Fourier Transform Infrared Spectroscopy and Quantum Chemical Calculations
(2009-11-26)
Chiang, Hung-Chu
;
Wang, Niann-Shiah
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Tsuchiya, Soji
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Chen, Hsin-Tsung
;
Lee, Yuan-Pern
Time-resolved infrared emission of CO(2) and OCS was observed in reactions O((1)P) + OCS and O((1)D) + OCS with a step-scan Fourier transform spectrometer. The CO(2) emission involves Delta nu(3) = -1 transitions from highly vibrationally excited states, whereas emission of OCS is mainly from the transition (0, 0 degrees, 1) (0, 0, 0); the latter derives its energy via near-resonant V-V energy transfer from highly excited CO(2). Rotationally resolved emission lines of CO (v <= 4 and J <= 30) were also observed in the reaction O((1)D) + OCS. For O((3)P) + OCS, weak emission Of CO(2) diminishes when Ar is added, indicating that O((3)P) is translationally hot to overcome the barrier for CO(2) formation. The band contour of CO(2) agrees with a band shape simulated on the basis of a Dunharn expansion model of CO(2); the average vibrational energy of CO(2) in this channel is 49% of the available energy. This vibrational distribution fits with that estimated through a statistical partitioning of energy E* congruent to 18 000 +/- 500 cm(-1) into all vibrational modes of CO(2). For the reaction of O((1)D) + OCS, approximately 51% of the available energy is converted into vibrational energy of CO(2), and a statistical prediction using E* congruent to 30 000 +/- 500 cm(-1) best fits the data. The mechanisms of these reactions are also investigated with the CCSD(T)/6-311+G(3df)//B3LYP/6-311+G(3df) method. The results indicate that the triplet O((3)P) + OCS(X(1)Sigma(+)) surface proceeds via direct abstraction and substitution channels with barriers of 27.6 and 36.4 kJ mol(-1), respectively, to produce SO(X(3)Sigma(-)) + CO(X(1)Sigma(+)) and S((3)P) + CO(2)(X(1)A(1)), whereas two intermediates, OSCO and SC(O)O, are formed from the singlet O((1)D) + OCS(X(1)Sigma(+)) surface without barrier, followed by decomposition to SO(a(1)Delta) + CO(X(1)Sigma(+)) and S((1)D) + CO(2)(X(1)A(1)), respectively. For the ground-state reaction O((3)P) + OCS(X(1)Sigma(+)), the singlet-triplet curve crossings play important roles in the observed kinetics and chemiluminescence.
Density Functional Theory Study of the Adsorption and Reaction of H(2)S on TiO(2) Rutile (110) and Anatase (101) Surfaces
(2009-11-26)
Huang, Wen-Fei
;
Chen, Hsin-Tsung
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Lin, M. C.
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應用化學系分子科學碩博班
;
Institute of Molecular science
The adsorption and reaction of H(2)S on TiO(2) rutile (110) and anatase (101) surfaces have been investigated by using periodic density functional theory (DFT) in conjunction with the projected augmented wave (PAW) approach. Adsorption mechanisms of H(2)S, HS, and S on both surfaces were analyzed. It was found that H(2)S, HS, S, and H preferentially adsorb at the Ti(5c), O(2c), (Ti(5c))(2), and O(2c) sites, respectively, on the rutile surface, and at the Ti(5c), (Ti(5c))(2), (-O(2c))(-Ti(5c)), and O(2c), sites, respectively, on the anatase surface. Potential energy profiles of the adsorption processes on both Surfaces producing H(2) and H(2)O were constructed using the nudged elastic band (NEB) method. Forming Surface sulfur species by a complete O <-> S exchange at the rutile Surface is endothermic by 15.4 kcal/mol and requires a high energy barrier of 35.5 kcal/mol, while it is endothermic by 5.0 kcal/mol and requires it lower energy barrier of 12.4 kcal/mol at the anatase surface. The rate constants for the dehydrogenation and dehydration processes have been predicted.
Reaction Dynamics of O(D-1,P-3) + OCS Studied with Time-Resolved Fourier Transform Infrared Spectroscopy and Quantum Chemical Calculations
(2009-11-26)
Chiang, Hung-Chu
;
Wang, Niann-Shiah
;
Tsuchiya, Soji
;
Chen, Hsin-Tsung
;
Lee, Yuan-Pern
Time-resolved infrared emission of CO2 and OCS was observed in reactions O(P-1) + OCS and O(D-1) + OCS with a step-scan Fourier transform spectrometer. The CO2 emission involves Delta nu(3) = -1 transitions from highly vibrationally excited states, whereas emission of OCS is mainly from the transition (0, 0 degrees, 1) (0, 0, 0); the latter derives its energy via near-resonant V-V energy transfer from highly excited CO2. Rotationally resolved emission lines of CO (v <= 4 and J <= 30) were also observed in the reaction O(D-1) + OCS. For O(P-3) + OCS, weak emission Of CO2 diminishes when Ar is added, indicating that O(P-3) is translationally hot to overcome the barrier for CO2 formation. The band contour of CO2 agrees with a band shape simulated on the basis of a Dunharn expansion model of CO2; the average vibrational energy of CO2 in this channel is 49% of the available energy. This vibrational distribution fits with that estimated through a statistical partitioning of energy E* congruent to 18 000 +/- 500 cm(-1) into all vibrational modes of CO2. For the reaction of O(D-1) + OCS, approximately 51% of the available energy is converted into vibrational energy of CO2, and a statistical prediction using E* congruent to 30 000 +/- 500 cm(-1) best fits the data. The mechanisms of these reactions are also investigated with the CCSD(T)/6-311+G(3df)//B3LYP/6-311+G(3df) method. The results indicate that the triplet O(P-3) + OCS(X-1 Sigma(+)) surface proceeds via direct abstraction and substitution channels with barriers of 27.6 and 36.4 kJ mol(-1), respectively, to produce SO(X-3 Sigma(-)) + CO(X-1 Sigma(+)) and S(P-3) + CO2(X(1)A(1)), whereas two intermediates, OSCO and SC(O)O, are formed from the singlet O(D-1) + OCS(X-1 Sigma(+)) surface without barrier, followed by decomposition to SO(a(1)Delta) + CO(X-1 Sigma(+)) and S(D-1) + CO2(X(1)A(1)), respectively. For the ground-state reaction O(P-3) + OCS(X-1 Sigma(+)), the singlet-triplet curve crossings play important roles in the observed kinetics and chemiluminescence.
Density Functional Theory Study of the Adsorption and Reaction of H2S on TiO2 Rutile (110) and Anatase (101) Surfaces
(2009-11-26)
Huang, Wen-Fei
;
Chen, Hsin-Tsung
;
Lin, M. C.
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應用化學系分子科學碩博班
;
Institute of Molecular science
The adsorption and reaction of H2S on TiO2 rutile (110) and anatase (101) surfaces have been investigated by using periodic density functional theory (DFT) in conjunction with the projected augmented wave (PAW) approach. Adsorption mechanisms of H2S, HS, and S on both surfaces were analyzed. It was found that H2S, HS, S, and H preferentially adsorb at the Ti-5c, O-2c, (Ti-5c)(2), and O-2c sites, respectively, on the rutile surface, and at the Ti-5c, (Ti-5c)(2), (-O-2c)(-Ti-5c), and O-2c, sites, respectively, on the anatase surface. Potential energy profiles of the adsorption processes on both Surfaces producing H-2 and H2O were constructed using the nudged elastic band (NEB) method. Forming Surface sulfur species by a complete O <-> S exchange at the rutile Surface is endothermic by 15.4 kcal/mol and requires a high energy barrier of 35.5 kcal/mol, while it is endothermic by 5.0 kcal/mol and requires it lower energy barrier of 12.4 kcal/mol at the anatase surface. The rate constants for the dehydrogenation and dehydration processes have been predicted.
Synthesis, characterization, and photophysics of electroluminescent fluorene/dibenzothiophene- and fluorene/dibenzothiophene-S,S-dioxide-based main-chain copolymers bearing benzimidazole-based iridium complexes as backbones or dopants
(2009-11-27)
Huang, Wei-Sheng
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Wu, Ying-Hsien
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Hsu, Ying-Chan
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Lin, Hong-Cheu
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Lin, Jiann T.
A series of electroluminescent copolymers containing fluorene-2,8-disubstituted dibenzothiophene (PFD), fluorene-2,8-disubstituted dibenzothiophene-SS-dioxide (PFDo) and phosphorescent benzimidazole-based iridium (Ir) complexes in the backbones were synthesized by the Suzuki coupling reaction. The thermal stabilities, HOMO/LUMO levels and triplet energy gap (ET) values were enhanced with increasing contents of dibenzothiophene ( D) or dibenzothiophene-S,S-dioxide (Do) segments in the copolymers. The relative intensities of phosphorescence and fluorescence were affected by the energy transfer and back transfer efficiencies between the polymer backbones and iridium units as evidenced by solid state PL and EL spectra. PLED devices with a configuration of ITO/PEDOT:PSS (50 nm)/metal-free copolymers (P1-P5), Ir-copolymers (P7-P13) and Ir-doped copolymers (P3 doped with Ir-complexes 6 and 8) (60-80 nm)/TPBI (40 nm)/LiF (1 nm)/Al (120 nm) were fabricated, and the electroluminescence (EL) efficiencies depended on the chemical constituents and triplet energies of the copolymers. The space-charge-limited current (SCLC) flow technique was used to measure the charge carrier mobilities of these copolymers, where both hole and electron mobilities were in the following order: the metal-free copolymers (P2, P3 and P5) > Ir-doped copolymers (P3+3 or 10 mol% Ir-complex 6) > Ir-copolymers (P7, P8, P12 and P13). (C) 2009 Elsevier Ltd. All rights reserved.
第六十四期總編輯的話
(2009-11-29)
傅如尉
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Department of Communication and Technology
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傳播與科技學系
六十四期總編輯的話
創為新調蕭麗虹由竹圍出發
(2009-11-29)
鄭心舜
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Department of Communication and Technology
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傳播與科技學系
來自香港卻說著流暢的中文和輪轉的台語，在柏克萊大學主修經濟卻擁有著開放的藝術家靈魂；蕭麗虹身上結合了許多矛盾的元素，卻巧妙的將這些不同的背景融合成獨特的生活方式。笑容爽朗的她目前是淡水竹圍工作室的負責人，除了為藝術家們爭取創作空間外，也希望將創意文化由社區推廣到各個角落。
唱出查某人百年愛情
(2009-11-29)
吳奕樺
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Department of Communication and Technology
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傳播與科技學系
看似簡單傳達情意的台語愛情歌曲，細細推敲可以發現箇中的基調。音樂的展演，聚合時代複雜的社會因素，交融出不同的音樂風格。將音樂視為一套象徵符號體系，解讀每個時代產生的歌曲創作。因為一首音樂就像是一個人，深刻地表現他們的日常生活。
音樂鬼才 MIKA人聲無法擋
(2009-11-29)
林穎瑄
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Department of Communication and Technology
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傳播與科技學系
音樂創作才子─米卡，不願追隨主流意識，擁有自我獨特風格的當紅「異人」。
《邊境漂流》泰緬邊境2000天
(2009-11-29)
陳柏全
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Department of Communication and Technology
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傳播與科技學系
《邊境漂流》泰緬邊境2000天
潘裕文《夢想家》
(2009-11-29)
郭伯宇
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Department of Communication and Technology
;
傳播與科技學系
星光一班的潘裕文在隔了兩年多後，終於發表了他的第一首新歌，並請來鴨子徐宛鈴合作，令人期待。
槍與玫瑰亞洲巡迴　近日登台　
(2009-11-29)
徐鈺婷
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Department of Communication and Technology
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傳播與科技學系
睽違二十年的重金屬搖滾天團槍與玫瑰(Guns N' Roses)即將在二ＯＯ九年十二月十一日於板橋體育場舉辦首場在台演唱會，槍與玫瑰就是要讓台灣樂迷大喊「Rocker」搖滾萬歲！