Browsing by Issue Date, starting with "2010-04-05"

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Direct Observation of the Molecular Structural Changes during the Claisen Rearrangement Including the Transition State
(2010-04-05)
Iwakura, Izumi
;
Yabushita, Atushi
;
Kobayashi, Takayoshi
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電子物理學系
;
Department of Electrophysics
The detailed processes in the Claisen rearrangement were observed. The process was vibrationally excited in the electronic ground state by a stimulated Raman process using a 5-fs pulse. The Claisen rearrangement was found to follow a three-step pathway. At first, the C(4)-O bond is weakened to generate a bis-allyl-like intermediate. Next, the formation of a weak C(1)-C(6) bond results in the generation of an aromatic-like intermediate. Finally, C(4)-O breaking and C(1)-C(6) formation occur simultaneously to generate the product.
Regge closed string scattering and its implication on fixed angle closed string scattering
(2010-04-05)
Lee, Jen-Chi
;
Yang, Yi
;
電子物理學系
;
Department of Electrophysics
We calculate the complete closed string high energy scattering amplitudes (HSA) in the Regge regime for arbitrary mass levels. As an application, we deduce the complete ratios among closed string HSA in the fixed angle regime by using Stirling number identities. These results are in contrast with the incomplete set of closed string HSA in the fixed angle regime calculated previously. The complete forms of the fixed angle amplitudes, and hence the ratios, were not calculable previously without the input of zero-norm state calculation. This is mainly due to the lack of saddle point in the fixed angle closed string calculation. (C) 2010 Elsevier By. All rights reserved.
Vertical organic transistor
(2010-04-06)
Meng
;
Hsin-Fei
;
Horng
;
Sheng-Fu
;
Chao
A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
交大e-News第068期
(2010-04-06)
Secretariat
;
國立交通大學秘書室
Joined use of oxazolidinone and desymmetric amino protection: a new strategy for protection of glucosamine
(2010-04-07)
Lin, Shih-Che
;
Chao, Chin-Sheng
;
Chang, Chiu-Ching
;
Mong, Kwok-Kong T.
;
應用化學系
Joined use of N-benzyl oxazolidinone and N-benzyl-N-benzyloxycarbonyl (N-BnCbz) desymmetric amino-protecting function is reported. The new synthetic approach enables the facile preparation of type I and type 2 LacNAc disaccharides in satisfactory yields. One-pot deprotection of N-BnCbz and O-benzyl ether is achieved by hydrogenolysis under mild conditions. (C) 2010 Elsevier Ltd. All rights reserved.
Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing
(2010-04-07)
Lee, Y. J.
;
Lee, C. H.
;
Tung, L. T.
;
Chiang, T. H.
;
Lai, T. Y.
Molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs has been rapidly thermal annealed to 850 degrees C in N-2. The hetero-structure remained intact, with the In0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.
Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3)) passivation on In(0.20)Ga(0.80)As/GaAs-structural intactness with high-temperature annealing
(2010-04-07)
Lee, Y. J.
;
Lee, C. H.
;
Tung, L. T.
;
Chiang, T. H.
;
Lai, T. Y.
Molecular beam epitaxy grown Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3))/In(0.20)Ga(0.80)As/GaAs has been rapidly thermal annealed to 850 degrees C in N(2). The hetero-structure remained intact, with the In(0.20)Ga(0.80)As/GaAs interface being free of misfit dislocation and In(0.20)Ga(0.80)As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga(2)O(3)(Gd(2)O(3)) as a dielectric with an in situ Al(2)O(3) capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.
Highly Efficient and Stable Inverted Polymer Solar Cells Integrated with a Cross-Linked Fullerene Material as an Interlayer
(2010-04-07)
Hsieh, Chao-Hsiang
;
Cheng, Yen-Ju
;
Li, Pei-Jung
;
Chen, Chiu-Hsiang
;
Dubosc, Martin
A novel PCBM-based n-type material, [6,6]-phenyl-C(61)-butyric styryl dendron ester (PCBSD). functionalized with a dendron containing two styryl groups as thermal cross-linkers, has been rationally designed and easily synthesized. In situ cross-linking of PCBSD was carried out by heating at a low temperature of 160 degrees C for 30 min to generate a robust, adhesive, and solvent-resistant thin film. This cross-linked network enables a sequential active layer to be successfully deposited on top of this interlayer to overcome the problem of interfacial erosion and realize a multilayer inverted device by all-solution processing. An inverted solar cell device based on an ITO/ZnO/C-PCBSD/P3HT:PCBM/PEDOT:PSS/Ag configuration not only achieves enhanced device characteristics, with an impressive PCE of 4.4%, but also exhibits an exceptional device lifetime without encapsulation; it greatly outperforms a reference device (PCE = 3.5%) based on an ITO/ZnO/P3HT:PCBM/PEDOT:PSS/Ag configuration without the interlayer. This C-PCBSD interlayer exerts multiple positive effects on both P3HT/C-PCBSD and PCBM/C-PCBSD localized heterojunctions at the interface of the active layer, including improved exciton dissociation efficiency, reduced charge recombination, decreased interface contact resistance, and induction of vertical phase separation to reduce the bulk resistance of the active layer as well as passivation of the local shunts at the ZnO interface. Moreover, this promising approach can be applied to another inverted solar cell, ITO/ZnO/C-PCBSD/PCPDTBT:PC(71)BM/PEDOT:PSS/Ag, using PCPDTBT as the p-type low-band-gap conjugated polymer to achieve an improved PCE of 3.4%. Incorporation of this cross-linked C(60) interlayer could become a standard procedure in the fabrication of highly efficient and stable multilayer inverted solar cells.
Optical touch display device, optical touch sensing device and touch sensing method
(2010-04-08)
Tseng, Ping-Chen
;
Tien, Chung-Hao
The present invention provides an optical touch display device, an optical touch sensing device, and a method for calculating a touch position. The optical touch sensing device can be detachably attached on a display panel using adhesive or other method. The present invention includes a first light source, a second light source, a light sensing element, and a processing unit. When an object blocks the path of light, some light sensing elements will receive some or no light. The processing unit will then compute two line segments based on the positions of light sensing elements receiving some or no light. The two line segments cross each other and their intersection is defined as the position of object or the touch position.
Vibrational Fine Structures Revealed by the Frequency-to-Time Fourier Transform of the Transient Spectrum in Bacteriorhodopsin
(2010-04-08)
Yabushita, Atsushi
;
Kobayashi, Takayoshi
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電子物理學系
;
Department of Electrophysics
A vibrational progression that is hidden in a featureless spectrum of induced absorption and stimulated emission was found in time-resolved absorption change spectra. The ultrahigh time resolution of the pump probe measurement made by using an ultrashort laser pulse localizes the wave packet along the potential multimode hyper surfaces, represented by a vibrational progression. The transition energy of the induced absorption and stimulated emission corresponds to a localized point (space) on the hyper surface, which is visited by the wave packets with fixed phases.
Immersion Lithography Apparatus and Tank Thereof
(2010-04-08)
Hung, Kuo-Yung
;
Tseng, Fan-Gang
A tank for an immersion lithography apparatus provided. The tank has a container with a bottom plate and side plates connected to each, wherein the side plates surround and connect all edges of the bottom plate. The container is filled in at least a liquid having a refractive index thereof from about 1.4 to about 1.8. A platform is located in the container and immersed in the liquid. The platform has an axle fastened on a side thereof parallel to the bottom plate, wherein the axle passes through a bearing hole penetrated through one of the side plates. A roller disposed outside the container connects to the axle to rotate the axle, and furthermore, to incline the platform accordingly.
Electrical conduction mechanisms in natively doped ZnO nanowires (II)
(2010-04-09)
Tsai, Lin-Tzung
;
Chiu, Shao-Pin
;
Lu, Jia Grace
;
Lin, Juhn-Jong
;
電子物理學系
We have measured the intrinsic electrical resistivities, rho(T), of three individual single-crystalline ZnO nanowires (NWs) from 320 down to 1.3 K. The NWs were synthesized via carbon thermal chemical vapor deposition and the four-probe Pt contacting electrodes were made by the focused-ion-beam technique. Analysis of the overall temperature behavior of rho(T) confirms that the charge transport processes in natively doped ZnO NWs are due to a combination of the thermal activation conduction and the nearest-neighbor hopping conduction processes, as proposed and explained in a recent work (Chiu et al 2009 Nanotechnology 20 015203) where the ZnO NWs were grown by a different thermal evaporation method and the four-probe electrodes were made by the electron-beam lithography technique. Taken together, the observations of these two complementary studies firmly establish that the electrical conduction mechanisms in natively doped ZnO NWs are unique and now satisfactorily understood.
Inverted heterojunction solar cells incorporating fullerene/polythiophene composite core/shell nanorod arrays
(2010-04-09)
Wang, Hsu-Shen
;
Chen, Shih-Yung
;
Su, Ming-Hsin
;
Wang, Yuh-Lin
;
Wei, Kung-Hwa
We have fabricated inverted heterojunction solar cell devices incorporating [6,6]-phenyl-C(61)-butyric acid methyl ester/poly(3-hexylthiophene) core/shell nanorod arrays by using an anodic alumina oxide template. The internal quantum efficiencies and external quantum efficiencies of these core/shell nanorod inverted solar cells were higher than those of the corresponding conventional inverted bulk heterojunction device. The optimized nanorod array structure had a high hole mobility that was over one order magnitude greater than that of the conventional bulk heterojunction structure, as determined by fitting the dark J-V curves into the space charge limited current model. The more efficient carrier transport of the device incorporating the core/shell nanorod arrays provided it with both a higher short-circuit current density and power conversion efficiency.
第七十五期總編輯的話
(2010-04-11)
張國鍵
;
Department of Communication and Technology
;
傳播與科技學系
第七十五期的喀報形式主要著重於多媒體的呈現方式，並展現出傳播與科技學系的記者們，理論與實務兼具特色，除了會寫文章之外，更具備影像、Flash、廣播、攝影等多媒體的創作能力。
童星點點　花香不在多
(2010-04-11)
鄭心舜
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Department of Communication and Technology
;
傳播與科技學系
長大後星途黯淡的童星不在少數，但仍舊發光發熱的也並非不在；重要的是如何維護小童星的成長品質，並讓孩子們在可感知的機會裡體驗世界的美好面向。
二十二。
(2010-04-11)
傅如尉
;
Department of Communication and Technology
;
傳播與科技學系
二十二。
創作不設限大膽玩藝術
(2010-04-11)
林穎瑄
;
Department of Communication and Technology
;
傳播與科技學系
「藝術家都要學會忍受孤寂。」結像紀事創意文化有限公司總監─黃中宇如此提到。黃中宇畢業於淡江大學建築系；不過，他並沒有立刻走往建築師道路，反而先前往法國學習攝影，而這一去，也讓他待上了十年。
理性與感性　法律前線論死刑
(2010-04-11)
林乃絹
;
Department of Communication and Technology
;
傳播與科技學系
死刑存廢議題引起軒然大波，儼然成為社會熱烈討論的焦點，許多政要名人紛紛公開表達個人立場，但是，這場台灣司法的風暴，卻少見司法人員表態。這些站在第一線面對死刑爭議的法律人，褪去面對司法案件時的理性外衣，感性地用個人經驗審視死刑存廢的未來發展。
危「基」當前科技發展危機
(2010-04-11)
郭伯宇
;
Department of Communication and Technology
;
傳播與科技學系
基因科技突飛猛進，法律、倫理和人性可能也因此崩潰
臺下的摔角者《力挽狂瀾》
(2010-04-11)
李志豪
;
Department of Communication and Technology
;
傳播與科技學系
在真實世界的摔角幕後，不像電影裡的一團和氣而是存在各種小團體，但是在套招、吃招的流程上一點都馬虎不得。那摔角是假的嗎？可是擂台上的人挨揍是真的、摔在地板上是真的、身上的鮮血也是真的，這個運動對摔角手造成的傷害，短暫甚至永久的傷害，都是真實無法抹滅。