Browsing by Issue Date, starting with "2010-11-22"

Now showing 1 - 20 of 44669

In situ TEM investigation of dynamical changes of nanostructures
(2010-11-22)
Chen, L. J.
;
Wu, W. W.
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In situ investigation of the temperature induced phase transformation, structural and chemical evolution of nanocrystals is important for understanding the structure and stability of nanomaterials. Transmission electron microscopy (TEM), one of the most powerful tools for characterizing nanostructured materials, is essential for the development of nanotechnology. In situ TEM is a technique that allows a direct observation of dynamic properties in nanoscale. Recent development of ultra-high vacuum TEM (UHV-TEM) further enables the investigation on atomic-scale materials systems in a clean environment. The appropriate utilization of the UHV-TEM will be beneficial in studying the fundamental mechanisms of dynamic reactions, formation of transient phase, solid-state amorphization, epitaxial growth, growth kinetics and evolution of defects. In this paper, we present the most recent progress in observing dynamic processes in nanoscale by in situ UHV-TEM. (C) 2010 Elsevier B.V. All rights reserved.
Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention
(2010-11-22)
Tsai, C. Y.
;
Lee, T. H.
;
Cheng, C. H.
;
Chin, Albert
;
Wang, Hong
We have fabricated the TaN-[SiO(2)-LaAlO(3)]-ZrON-[LaAlO(3)-SiO(2)]-Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si(3)N(4)-thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 degrees C, under very fast 100 mu s and low +/- 16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As(+) implantation that was significantly better than those of control device without ion implantation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522890]
In situ TEM investigation of dynamical changes of nanostructures
(2010-11-22)
Chen, L. J.
;
Wu, W. W.
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In situ investigation of the temperature induced phase transformation, structural and chemical evolution of nanocrystals is important for understanding the structure and stability of nanomaterials. Transmission electron microscopy (TEM), one of the most powerful tools for characterizing nanostructured materials, is essential for the development of nanotechnology. In situ TEM is a technique that allows a direct observation of dynamic properties in nanoscale. Recent development of ultra-high vacuum TEM (UHV-TEM) further enables the investigation on atomic-scale materials systems in a clean environment. The appropriate utilization of the UHV-TEM will be beneficial in studying the fundamental mechanisms of dynamic reactions, formation of transient phase, solid-state amorphization, epitaxial growth, growth kinetics and evolution of defects. In this paper, we present the most recent progress in observing dynamic processes in nanoscale by in situ UHV-TEM. (C) 2010 Elsevier B.V. All rights reserved.
NMR evidence for the partially gapped state in CeOs(2)Al(10)
(2010-11-22)
Lue, C. S.
;
Yang, S. H.
;
Su, T. H.
;
Young, Ben-Li
;
電子物理學系
We report the results of a (27)Al nuclear magnetic resonance (NMR) study of CeOs(2)Al(10) at temperatures between 4 and 300 K. This material has been of current interest due to indications of hybridization gap behavior below the transition temperature T(o)similar or equal to 29 K. Five (27)Al NMR resonance lines that are associated with five nonequivalent crystallographic aluminum sites have been resolved. For each individual aluminum site, the low-temperature NMR Knight shift goes over a thermally activated response. The temperature-dependent spin-lattice-relaxation rate exhibits a rapid drop below T(o), indicative of the formation of an energy gap in this material. We interpret the Knight shift and the relaxation-rate data in light of the presence of a pseudogap with residual electronic density of states at the Fermi level. Moreover, the magnitude of the pseudogap of 120 K is extracted from NMR results, in agreement with the value obtained from the inelastic neutron-scattering experiment.
NMR evidence for the partially gapped state in CeOs2Al10
(2010-11-22)
Lue, C. S.
;
Yang, S. H.
;
Su, T. H.
;
Young, Ben-Li
;
電子物理學系
We report the results of a Al-27 nuclear magnetic resonance (NMR) study of CeOs2Al10 at temperatures between 4 and 300 K. This material has been of current interest due to indications of hybridization gap behavior below the transition temperature T-o similar or equal to 29 K. Five Al-27 NMR resonance lines that are associated with five nonequivalent crystallographic aluminum sites have been resolved. For each individual aluminum site, the low-temperature NMR Knight shift goes over a thermally activated response. The temperature-dependent spin-lattice-relaxation rate exhibits a rapid drop below T-o, indicative of the formation of an energy gap in this material. We interpret the Knight shift and the relaxation-rate data in light of the presence of a pseudogap with residual electronic density of states at the Fermi level. Moreover, the magnitude of the pseudogap of 120 K is extracted from NMR results, in agreement with the value obtained from the inelastic neutron-scattering experiment.
交大e-News第083期
(2010-11-22)
Secretariat
;
國立交通大學秘書室
Assistant apparatus for surmounting barrier
(2010-11-23)
Cheng
;
Pi-Ying
;
Wong
;
Kian-Poh
The present invention provides an assistant apparatus for surmounting a barrier, which comprises a carrier body, an assistant mechanism, and a sensing/driving apparatus. The assistant mechanism, disposed at a side of the carrier body, having an assistant block disposed at the end thereof, functions to place the assistant block on the ground between the carrier body and the barrier so that the carrier body is capable of surmounting the barrier through the assistance of the assistant block. The sensing/driving apparatus, coupled to the assistant mechanism, functions to drive the assistant mechanism to generate the adjusting movement according to whether the barrier is detected or not. By means of the design of the present invention, the assistant block is adopted to reduce the height surmounted by the carrier each time so that the carrier is capable of surmounting the barrier section by section.
Circuit and method for implementing frequency tripled I/Q signals
(2010-11-23)
Kuo
;
Chien-Nan
;
Chen
;
Huan-Sheng
A circuit and a method for implementing frequency tripled I/Q signals are proposed, including receiving two input I/Q signals through frequency multipliers so as to generate two frequency multiplied signals and mixing the input I/Q signals and the corresponding frequency multiplied signals through mixers for generating and outputting two I/Q signals with a frequency three times that of the input I/Q signals. The invention eliminates the requirement for high amplitude of the input signals as in the prior art and has lower power consumption and broader bandwidth and can be used as high frequency signal sources in any single chip processes.
葛拉斯戰後小說《錫鼓》（）的杜撰與寫實
(2010-11-24)
鄭芳雄
;
開放教育推動中心
;
Open Education Office
課程首頁本課程是由交通大學新文藝復興閱讀計畫提供。 96 年 8 月當各大學紛紛摩拳擦掌準備迎接新生的同時，交通大學校長吳重雨則因為一則來自於七月份泰晤士報，有關於英國首相布朗公布其夏日讀書清單的新聞中，看到了他對知識的尊重。在這同時，吳重雨校長也思考著，要如何為學生準備追求知識的環境和激發他們對知識的尊重與喜愛。台積電張忠謀董事長曾陳述他 18 歲進入哈佛那一年，博覽文史哲理工經典群籍，至此奠定了他求知的基礎，並借海明威名言，將其改為「哈佛這一年為人生可帶走的盛宴。」吳重雨校長以張董事長的學習為借鏡，認為學生固然能藉由自我閱讀的方式學習到豐沛的知識，但透過名人、大師親臨現場地介紹經典書籍，更能加深學子們對於書籍的認識與興趣，這也是「新文藝復興閱讀計劃」 ( 以下簡稱 : 「經典名著選讀」 ) 活動展開籌劃的緣由。於是，吳重雨校長便積極敦請「交大通識教育委員會」，接手籌備本計劃的相關活動，而該中心也成為實際施行本計畫的策動、開課以及認證單位。至此，期許交大學子藉由閱讀、聽講來提昇人文素養、開拓視野的「新文藝復興閱讀計劃」，就此展開。
The properties and design concepts of photonic directional couplers made of photonic crystal slabs
(2010-11-24)
Huang, Chih-Hsien
;
Wu, Jing-Nuo
;
Lee, Po-Yi
;
Hsieh, Wen-Feng
;
Cheng, Szu-Cheng
The properties and design concepts of air-defect symmetric and asymmetric directional couplers (DCs) made of photonic crystal slabs (PCSs) are investigated by the tight-binding theory. We give criteria in both cases for determining the specific frequency, named as the decoupling point, at which the even (-like) and odd (-like) parities of eigenmodes should switch. Two dispersion curves will cross in symmetric DCs but not in asymmetric DCs because eigenfrequencies of isolated photonic waveguides (PCWs) are different in asymmetric DCs. In the dielectric-rod PCS, the decoupling point of the DC is located almost at the same wave vector as a two-dimensional (2D) DC with only a blue shift in its frequency. Therefore, 2D simulation can give a primary result in designing a dielectric-rod DC. On reducing the radius of the defect rods, the increase in coupling coefficients leads to a faster group velocity and a longer coupling length. On the other hand, the dispersion curves of the air-hole PCS DC are no longer parallel to those of the 2D DC so that performing a 3D simulation is necessary in designing an air-hole PCS DC with enlarged air holes. Moreover, the dispersion curve of the single PCW is no longer located at the centre of the curves of the symmetric DC and the group velocity may become negative which is not observed in the dielectric-rod PCS. The simulation results indicate that the coupling length of an air-defect DC can be achieved as short as 5 lattice constants, which is much smaller than that made of dielectric defects in air-hole PCS DCs.
Using electroless plating Cu technology for TFT-LCD application
(2010-11-25)
Liu, Po-Tsun
;
Chou, Yi-Teh
;
Su, Chih-Yu
;
Chen, Hung-Ming
;
光電工程學系
This study investigates the feasibility of using electroless plating (ELP) technology to manufacture copper (Cu) gate electrodes in thin film transistors (TFTs). The problem of poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus (NiP) layers. Copper pattern formation with a desired taper can be self-aligned subsequently on a NiP layer without any layer etching process. ELP Cu film shows an obvious (111) preferred orientation, which may enhance the electrode's anti-electromigration ability. The electrical characteristics of the ELP Cu gate TFT are also similar to those of the sputter-deposited Cu gate TFT. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
(2010-11-25)
Dai, Chih-Hao
;
Chang, Ting-Chang
;
Chu, Ann-Kuo
;
Kuo, Yuan-Jui
;
Chen, Shih-Ching
The influence of tensile mechanical strain on gate-induced floating-body effect (GIFBE) in advanced partially depleted SOI n-MOSFETs was investigated. Both drain current and mobility enhance after applying strain due to the reduction of average transfer effective mass. However, it was found that the GIFBE becomes serious under the mechanical strain. To explain this phenomenon, we first clarify the mechanism of GIFBE using different operation conditions. The experiment results indicate that the GIFBE can be attributed to the anode hole injection (AHI) rather than the widely accepted mechanism of electron band (EVB) tunneling. Based on the AHI model, the enhanced GIFBE under the mechanical strain is mainly due to the narrowing of band gap induced by the strain in the poly-gate. (C) 2010 Elsevier B.V. All rights reserved.
Phylogenetic diversity measures based on Hill numbers
(2010-11-27)
Chao, Anne
;
Chiu, Chun-Huo
;
Jost, Lou
;
統計學研究所
;
Institute of Statistics
We propose a parametric class of phylogenetic diversity (PD) measures that are sensitive to both species abundance and species taxonomic or phylogenetic distances. This work extends the conventional parametric species-neutral approach (based on 'effective number of species' or Hill numbers) to take into account species relatedness, and also generalizes the traditional phylogenetic approach (based on 'total phylogenetic length') to incorporate species abundances. The proposed measure quantifies 'the mean effective number of species' over any time interval of interest, or the 'effective number of maximally distinct lineages' over that time interval. The product of the measure and the interval length quantifies the 'branch diversity' of the phylogenetic tree during that interval. The new measures generalize and unify many existing measures and lead to a natural definition of taxonomic diversity as a special case. The replication principle (or doubling property), an important requirement for species-neutral diversity, is generalized to PD. The widely used Rao's quadratic entropy and the phylogenetic entropy do not satisfy this essential property, but a simple transformation converts each to our measures, which do satisfy the property. The proposed approach is applied to forest data for interpreting the effects of thinning.
Phylogenetic diversity measures based on Hill numbers
(2010-11-27)
Chao, Anne
;
Chiu, Chun-Huo
;
Jost, Lou
;
統計學研究所
;
Institute of Statistics
We propose a parametric class of phylogenetic diversity (PD) measures that are sensitive to both species abundance and species taxonomic or phylogenetic distances. This work extends the conventional parametric species-neutral approach (based on 'effective number of species' or Hill numbers) to take into account species relatedness, and also generalizes the traditional phylogenetic approach (based on 'total phylogenetic length') to incorporate species abundances. The proposed measure quantifies 'the mean effective number of species' over any time interval of interest, or the 'effective number of maximally distinct lineages' over that time interval. The product of the measure and the interval length quantifies the 'branch diversity' of the phylogenetic tree during that interval. The new measures generalize and unify many existing measures and lead to a natural definition of taxonomic diversity as a special case. The replication principle (or doubling property), an important requirement for species-neutral diversity, is generalized to PD. The widely used Rao's quadratic entropy and the phylogenetic entropy do not satisfy this essential property, but a simple transformation converts each to our measures, which do satisfy the property. The proposed approach is applied to forest data for interpreting the effects of thinning.
國語日報
(2010-11-28)
林書羽
;
Department of Communication and Technology
;
傳播與科技學系
參加的雖然是作文班，但對於寫作的印象近乎沒有。記憶最深刻的是下課後和爸爸的小吃之旅........
小房間衣鋪的故事高子婷
(2010-11-28)
呂靜宜
;
Department of Communication and Technology
;
傳播與科技學系
高子婷沒有踏上那條路口寬敞、平坦，且擠滿人潮的大道，她選擇了一條截然不同的蜿蜒小路。至今已越過了三個年頭，她現在二十一歲，年齡相當於一個大學三年級的學生，但她是個名符其實的服飾店的老闆。
棉花糖邊走邊唱的夢想
(2010-11-28)
陳俐吟
;
Department of Communication and Technology
;
傳播與科技學系
「你還有多少勇氣？你還有什麼夢想？在還有剩餘力量的同時，請把它交給勇氣，實現夢想。」這是棉花糖主唱小球用來鼓勵自己的話。
打破沉默秀出你的行動！
(2010-11-28)
張瑜庭
;
Department of Communication and Technology
;
傳播與科技學系
在台灣，民眾對於社會、公共議題等較為嚴肅的話題，大多不會去主動接觸或者參與；也因此，像是「國際特赦組織」 (Amnesty International) 、「圖博之友會」、「司法改革基金會」等台灣的社運團體，雖已成立多時，但他們的行動卻難以成為社會關注的焦點，更別說是得到大眾的支持。
一鳳　跳出精彩的人生舞曲
(2010-11-28)
鄭家宜
;
Department of Communication and Technology
;
傳播與科技學系
一個單純喜愛音樂的初衷，帶她進入了舞蹈的世界，跳舞對她來說就像呼吸一樣，是一種生活型態。一個「小綠綠」曾經以為會考上師大，念完教育學程後就出來當老師，但是卻意外走上完全不同的路——成為舞蹈老師。當街舞走進生命，她的人生開啟了新的價值與意義。她，是今年二十六歲的蔡怡梵，一鳳。
陳若樺咖啡口味的專注
(2010-11-28)
張宇翔
;
Department of Communication and Technology
;
傳播與科技學系
除了模稜兩可的咖啡符碼與文化風格，咖啡有著她的基本教義派。陳若樺，即是在這個堅持裡奮鬥的咖啡烘焙師，帶我們試圖除去那些天花亂墜的品味修辭，直接進入精品莊園咖啡的堂奧。