Browsing by Issue Date, starting with "2010-12-20"

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Alternative method for measuring the full-field refractive index of a gradient-index lens with normal incidence heterodyne interferometry
(2010-12-20)
Chen, Yen-Liang
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Hsieh, Hung-Chih
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Wu, Wang-Tsung
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Chang, Wei-Yao
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Su, Der-Chin
A linearly/circularly polarized heterodyne light beam coming from a heterodyne light source with an electro-optic modulator in turn enters a modified Twyman-Green interferometer to measure the surface plane of a GRIN lens. Two groups of periodic sinusoidal segments recorded by a fast complementary metal-oxide semiconductor camera are modified, and their associated phases are derived with the unique technique. The data are substituted into the special equations derived from the Fresnel equations, and the refractive index can be obtained. When the processes are applied to other pixels, the full-field refractive-index distribution can be obtained similarly. Its validity is demonstrated. (C) 2010 Optical Society of America
交大e-News第085期
(2010-12-20)
Secretariat
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國立交通大學秘書室
21 Gb/s after 100 km OFDM long-reach PON transmission using a cost-effective electro-absorption modulator
(2010-12-20)
Hsu, Dar-Zu
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Wei, Chia-Chien
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Chen, Hsing-Yu
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Chen, Jyehong
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Yuang, Maria C.
We experimentally demonstrate a superior performance of 2.1-Tb/s.km OFDM signal transmission over 100-km long-reach PONs. While the bandwidth of a 100-km SMF transmission system is limited to 4.3 GHz due to positive chirp, we successfully achieve spectrally-efficient 21-Gb/s signaling by using a cost-effective and low-chirp EAM, and adopting the 128-QAM format and adaptive subcarrier pre-emphasis. (C)2010 Optical Society of America
GROWTH OF AZO FILMS ON BUFFER LAYERS BY RF MAGNETRON SPUTTERING
(2010-12-20)
Chen, C. W.
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Tseng, C. H.
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Hsu, C. Y.
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Chou, C. P.
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Hou, K. H.
Al(2)O(3)-doped zinc oxide (in AZO, the Al(2)O(3) contents are approximately 2 wt.%) films have been grown by radio frequency (RF) magnetron sputtering at room temperature under varied sputtering pressures ranging from 3.5-15 mTorr. The electrical resistivity of AZO films is about 2.22 x 10(-3) Omega cm (sheet resistance similar to 89 Omega/square for a thickness similar to 250 nm), and the visible range transmittance is a bout 80% at the argon sputtering pressure of 15 mTorr and a RF power of 100 W. This study analyzes the structural, morphological, electrical and optical properties of AZO thin films grown on soda-lime glass substrate with 2, 5, and 10 nm thick Al buffer layers (and SiO(2) buffer). For the films deposited on the 2 nm thick Al buffer layer, we obtained ac-axis-oriented AZO/Al thin film on glass with the XRD full-width at half maximum (FWHM) of 0.31 and root mean square (RMS) surface roughness of about 3.22 nm. The lowest resistivity of 9.46 x 10(-4) Omega cm (sheet resistance similar to 37.87 Omega/square for a thickness similar to 250 nm) and a high transmittance (80%) were obtained by applying a 2 nm thick Al buffer layer. In contrast, the resistivity was slightly increased by applying the SiO(2) buffer layer.
Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer
(2010-12-20)
Chang, S. P.
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Wang, C. H.
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Chiu, C. H.
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Li, J. C.
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Lu, Y. S.
We have studied the characteristics of efficiency droop in GaN-based light emitting diodes (LEDs) with different kinds of insertion layers (ILs) between the multiple quantum wells (MQWs) layer and n-GaN layer. By using low-temperature (LT) (780 degrees C) n-GaN as IL, the efficiency droop behavior can be alleviated from 54% in reference LED to 36% from the maximum value at low injection current to 200 mA, which is much smaller than that of 49% in LED with InGaN/GaN short-period superlattices layer. The polarization field in MQWs is found to be smallest in LED with InGaN/GaN SPS layer. However, the V-shape defect density, about 5.3 x 10(8) cm(-2), in its MQWs region is much higher than that value of 2.9 x 108 cm(-2) in LED with LT n-GaN layer, which will lead to higher defect-related tunneling leakage of carriers. Therefore, we can mainly assign this alleviation of efficiency droop to the reduction of dislocation density in MQWs region rather than the decrease of polarization field. (C) 2010 American Institute of Physics. [doi:10.1063/1.3531957]
Millijoule-level Yb-doped photonic crystal fiber laser passively Q-switched with AlGaInAs quantum wells
(2010-12-20)
Zhuang, W. Z.
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Huang, W. C.
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Chiang, P. Y.
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Su, K. W.
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Huang, K. F.
We report on a millijoule-level Yb-doped photonic crystal fiber (PCF) laser passively Q-switched with AlGaInAs quantum wells (QWs). Three types of AlGaInAs devices with different QW numbers are fabricated to investigate the performance. With 50 groups of three AlGaInAs QWs as a saturable absorber (SA), the PCF laser generates an average power of 7.1 W with a pulse repetition rate of 6.5 kHz at a pump power of 16 W, corresponding to the pulse energy of 1.1 mJ. The maximum peak power is up to 110 kW. (C) 2010 Optical Society of America
數位轉換器及具有數位轉換器之電子裝置
(2010-12-21)
柯明道
;
顏承正
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廖期聖
;
陳東暘
一種數位轉換器，包括一第一調整單元以及一第一暫態偵測單元。當一靜電放電事件發生於一第一電源線，並且一第二電源線為一互補位準時，第一調整單元調整該靜電放電事件所產生之一ESD脈衝的振幅，以產生一第一調整信號。第一暫態偵測單元根據該第一調整信號，產生一第一數位碼。
漂在密西西比河上，讀《頑童流浪記》
(2010-12-22)
楊台恩
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開放教育推動中心
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Open Education Office
課程首頁本課程是由交通大學新文藝復興閱讀計畫提供。 96 年 8 月當各大學紛紛摩拳擦掌準備迎接新生的同時，交通大學校長吳重雨則因為一則來自於七月份泰晤士報，有關於英國首相布朗公布其夏日讀書清單的新聞中，看到了他對知識的尊重。在這同時，吳重雨校長也思考著，要如何為學生準備追求知識的環境和激發他們對知識的尊重與喜愛。台積電張忠謀董事長曾陳述他 18 歲進入哈佛那一年，博覽文史哲理工經典群籍，至此奠定了他求知的基礎，並借海明威名言，將其改為「哈佛這一年為人生可帶走的盛宴。」吳重雨校長以張董事長的學習為借鏡，認為學生固然能藉由自我閱讀的方式學習到豐沛的知識，但透過名人、大師親臨現場地介紹經典書籍，更能加深學子們對於書籍的認識與興趣，這也是「新文藝復興閱讀計劃」 ( 以下簡稱 : 「經典名著選讀」 ) 活動展開籌劃的緣由。於是，吳重雨校長便積極敦請「交大通識教育委員會」，接手籌備本計劃的相關活動，而該中心也成為實際施行本計畫的策動、開課以及認證單位。至此，期許交大學子藉由閱讀、聽講來提昇人文素養、開拓視野的「新文藝復興閱讀計劃」，就此展開。
GPS TRACKING SYSTEM
(2010-12-23)
WU, BING-FEI
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Chen, Ying-Han
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Chen, Chao-Jung
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Kao, Chih-Chung
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Huang, Po-Chia
The present invention relates a GPS tracking system, comprising a tracking and positioning device, a server, a positioning display unit, and a database. Since the tracking and positioning device only sends an Internet protocol (IP) data and a verification data once when it is connected to the Internet, and sends a positioning data only when a position of the tracking and positioning device is to be shown on the positioning display unit, the bandwidth can be saved.
Sensing element integrating silicon nanowire gated-diodes, manufacturing method and detecting system thereof
(2010-12-23)
Sheu, Jeng-Tzong
;
Chen, Chen-Chia
The invention disclosed a sensing element integrating silicon nanowire gated-diodes with microfluidic channel, a manufacturing method and a detecting system thereof. The sensing element integrating silicon nanowire gated-diodes with a microfluidic channel comprises a silicon nanowire gated-diode, a plurality of reference electrodes, a passivation layer and a microfluidic channel. The reference electrodes are formed on the silicon nanowire gated-diodes, and the passivation layer having a surface decorated with chemical materials is used for covering the silicon nanowire gated-diodes, and the microfluidic channel is connected with the passivation layer. When a detecting sample is connected or absorbed on the surface of the passivation layer, the sensing element integrating silicon nanowire gated-diodes with the microfluidic channel can detect an electrical signal change.
The effect of plasma deposition on the electrical characteristics of Pt/HfO(x)/TiN RRAM device
(2010-12-25)
Liu, Kou-Chen
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Tzeng, Wen-Hsien
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Chang, Kow-Ming
;
Wu, Chi-Hung
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電子工程學系及電子研究所
The electrical characteristics affected by plasma ions during resistive switching are investigated on an HfO(x)/TiN RRAM capacitor device. Experimental fabrications of the Pt electrode by e-beam evaporation, dc sputtering and stacked Pt electrode (evaporated first followed by sputtered deposition) are presented for discussion. The samples exhibit distinct electrical characteristics both under voltage- and current-mode measurement. The sputtered sample clearly demonstrates large-scale dispersion on high resistance values caused by sputtered ionized particle (Ar(+)) damage from the voltage-mode operation. Furthermore, intermediate resistance states and anomalous switching during high- to low-state switching by current-mode indicates that the unstable conducting filamentary paths are randomly formed. This result differs completely from that of the evaporated sample. On the stacked Pt electrode, an evaporated thin Pt layer inserted before sputtering deposition effectively reduces resistance dispersion. The external plasma damage gives clues that unreliable and unstable resistive switching characteristics can result from the sputtered damage during top electrode deposition. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
The effect of plasma deposition on the electrical characteristics of Pt/HfOx/TiN RRAM device
(2010-12-25)
Liu, Kou-Chen
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Tzeng, Wen-Hsien
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Chang, Kow-Ming
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Wu, Chi-Hung
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電子工程學系及電子研究所
The electrical characteristics affected by plasma ions during resistive switching are investigated on an HfOx/TiN RRAM capacitor device. Experimental fabrications of the Pt electrode by e-beam evaporation, dc sputtering and stacked Pt electrode (evaporated first followed by sputtered deposition) are presented for discussion. The samples exhibit distinct electrical characteristics both under voltage- and current-mode measurement. The sputtered sample clearly demonstrates large-scale dispersion on high resistance values caused by sputtered ionized particle (Ar+) damage from the voltage-mode operation. Furthermore, intermediate resistance states and anomalous switching during high- to low-state switching by current-mode indicates that the unstable conducting filamentary paths are randomly formed. This result differs completely from that of the evaporated sample. On the stacked Pt electrode, an evaporated thin Pt layer inserted before sputtering deposition effectively reduces resistance dispersion. The external plasma damage gives clues that unreliable and unstable resistive switching characteristics can result from the sputtered damage during top electrode deposition. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
Characteristics of Ni-Ir and Pt-Ir hard coatings surface treated by pulsed Nd:YAG laser
(2010-12-25)
Tseng, Shih-Feng
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Hsiao, Wen-Tse
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Huang, Kuo-Cheng
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Chen, Ming-Fei
;
Lee, Chao-Te
The subjects of the presented paper are to develop a laser surface treatment technology for the protective coatings of glass-molding dies and to better understand the interaction between laser beam and materials coated on the die surface. A variety of alloy films, including Ir-25 at.% Pt. Ir-50 at.% Pt, Ir-75 at.% Pt. Ir-25 at.% Ni, Ir-50 at.% Ni, and Ir-75 at.% Ni compositions are deposited by the ion source assisted magnetron sputtering system (ISAMSS). A Cr layer that functioned as a buffer layer is deposited between the alloy film and die surface. After an alloy film and the buffer Cr layer were sequentially coated on tungsten carbide (WC) surface, Nd:YAG laser was directly applied in the writing process. The temperature profile of the film stack structure is simulated by ANSYS software. The surface roughness was analyzed by atomic force microscopy (AFM) to compare the coating surface roughness before and after the laser surface treatments. The treated coatings for oxidation prevention test were examined by energy dispersive x-ray spectrometry (EDS). Nanoindentation instrument was performed to evaluate microhardness and reduced modulus of the coatings. The cross-sectional structures between the hard coating layer and buffer layer were also inspected by a scanning electron microscope (SEM). The Pt-Ir and Ni-Ir film coatings are unable to withstand the working temperature over 1500 degrees C, which is considered for quartz molding process and hot embossing process. The films showed high roughness, low microhardness and low reduced modulus because the film oxidation occurred in a high working temperature process. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
陳盈蓁　簡單童趣插畫夢
(2010-12-26)
羅文婕
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Department of Communication and Technology
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傳播與科技學系
很多學生都有過藝術、設計夢，畢竟能做自己喜歡的事，並且讓它有價值，是一件非常理想的人生規劃，但實際上，真正要在未來中從事創作，是需要很大的努力，在陳盈蓁的作品中除了讓我們看到美好的一面之外，背後嚴謹的創作精神與熱情，也如她的作品般美好並帶給我們另一層次的感動。
總有一天再見，愛
(2010-12-26)
黃萱如
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Department of Communication and Technology
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傳播與科技學系
一個人的一生中如果能經歷一段如煙火般短暫卻絢爛的難忘戀曲，將會為他帶來甚麼樣的轉變？這個故事是屬於豐和沓子，一個在錯誤的時間遇見對的人的故事。
校園霸凌　學生的夢魘
(2010-12-26)
張芳瑜
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Department of Communication and Technology
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傳播與科技學系
最近校園霸凌事件引起社會的關注，對於提供學生讀書環境的校園中潛藏各種危機，許多家長也開始擔心起孩子的學習狀況，面對霸凌事件，桃園八德國中爆發轉學潮，面對如此的危機，學生要怎樣去度過呢？
梅花鹿　復育又何用？
(2010-12-26)
沈祐平
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Department of Communication and Technology
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傳播與科技學系
彰化鹿港、嘉義鹿草、台東鹿野、苗栗鹿場、南投鹿谷……這些以鹿為名的地區，大家多有耳聞，但這些「鹿」都到哪兒去了？
動新聞　爭議新趨勢
(2010-12-26)
林映綺
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Department of Communication and Technology
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傳播與科技學系
近年來，網路已經成為現代人獲取資訊的重要來源之一，網路進而發展成公共領域的一環。傳統報紙及電視新聞不只是人們接收訊息的唯一管道，電子報、網路新聞相繼出現，讓越來越多人依賴網路媒體。最近被廣為討論的「動新聞」，也成了新興媒體之一。
我願意　《陪妳到最後》？
(2010-12-26)
周亭羽
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Department of Communication and Technology
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傳播與科技學系
王子和公主從此過著幸福、快樂，但簡短的生活？
醫療配特教　創造新希望
(2010-12-26)
彭婉婷
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Department of Communication and Technology
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傳播與科技學系
世界上每個人都是特別的，然而現今的特殊教育體制通常站在醫學的觀點定義學生的「特殊需要」，忽略了因為社會文化而產生的原因。當家長發現自己的孩子不同於一般人時，往往第一步先接受醫生的評估和治療，但治療個人問題取代了對社會制度以及生活環境的檢討。