Browsing by Issue Date, starting with "2011-04-16"

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擴散光學斷層掃描之影像重建方法、裝置及電腦程式產品
(2011-04-16)
徐源煌
;
方偉騏
;
桑梓賢
一種擴散光學斷層掃描之影像重建方法，包含下述步驟：（a）利用一前算模型求得一權重矩陣；（b）利用奇異分解法得到該權重矩陣的逆矩陣；（c）利用待測物的一子區域取得的接收光線訊號計算一光線強度矩陣，並將光線強度矩陣與權重矩陣之逆矩陣相乘得到組織吸收係數矩陣；（d）運算構成一全區域的各子區域之組織吸收係數矩陣；及（e）整合各子區域的組織吸收係數矩陣並對應不同顏色以得到全區域的擴散光學斷層掃描影像。本發明之功效在於使用子區域用來縮小矩陣而可減少運算量，並使用奇異分解法用於逆求解運算，有利於硬體設計以及可攜式裝置的應用。
利用高速氣流提升微粒充電效率之微粒充電裝置
(2011-04-16)
蔡春進
;
林冠宇
;
陳暉霖
一種利用高速氣流提升微粒充電效率之微粒充電裝置,包含有一外殼以及一放電電極線,外殼具有一充電腔室、一微粒入口、一包覆氣流入口、一出口以及一第一加速通道,該放電電極線是容置於該充電腔室之中,狹窄之第一加速通道係連接於充電腔室與出口之間,可使氣流加速而縮短帶電微粒通過的時間,以便降低帶電微粒之靜電損失,此外,微粒於帶電前是軸向地接近放電電極線,於帶電後是徑向地離開該放電電極線,因此微粒於帶電後可更迅速且均勻地擴散,有助於充電效率之提昇。
遍佈式健康監測站與其健康監測方法
(2011-04-16)
許嘉妤
;
邵家健
;
郭子毅
本發明係揭示一種遍佈式健康監測站與其健康監測方法。其結合使用者認證模組、整合型生理訊號檢測模組、資料處理模組、資料儲存模組，網路通訊模組、人機互動模組以及再生能源供電模組。其中生理訊號檢測模組包含耳溫槍、血壓脈搏計、血氧濃度計或體重計等可加裝或整合的檢測單元。而本發明的主要結構組合方便，殼體方便拆裝，加上以再生能源，例如：太陽能或風力發電，以及使用無線通訊連線，使得本發明可設置於不同場合，讓人們能夠隨時隨地監測個人的健康狀況。因此，本發明不僅有休憩與健康檢測服務，且具由有緊急服務與提供及時資訊等潛在價值。
時間還原方法及應用其之網路擬真系統
(2011-04-16)
王協源
;
黃昱銘
;
周智良
;
林志哲
;
辜博熙
一種應用於一網路擬真系統之各N(N為自然數)個待測設備上之時間還原方法,包括下列之步驟。首先由網路擬真器發出一第一封包。接著將第一封包進入連接導向協定(Connection Oriented Protocol)網路之第一時間記錄為第一時間戳記於第一封包中。然後接收第一封包,以取得第一時間戳記及第一封包離開連接導向協定網路之第二時間之第二時間戳記。接著根據第一及第二時間戳記計算得到第一實際傳輸延遲時間。然後根據最大傳輸延遲時間及第一實際傳輸延遲時間計算得到第一等待時間。之後將第一封包延遲第一等待時間後輸出至各N個待測設備。
文件處理系統及方法
(2011-04-16)
李嘉晃
;
廖贊瑋
本發明提供一種文件處理系統及方法。根據本發明之文件處理方法包含下列步驟:首先,獲得一文件,並將文件分解成多個詞彙並賦予各詞彙相對應之詞性標記。隨後,將該文件分解成多個句子。接著,自該等詞性標記中選擇關鍵詞性標記,並根據關鍵詞性標記將各句子轉換為初步關鍵詞串列。每個初步關鍵詞串列包含與該等關鍵詞性標記所對應之初步關鍵詞彙。進一步,選擇性地將構成該文件之代表句子之初步關鍵詞彙擴展成進階關鍵詞彙。最後,根據初步關鍵詞彙以及進階關鍵詞彙自多個句子中決定至少一核心候選句子組合成該文件之核心摘要。
互動式數位相框裝置
(2011-04-16)
林進燈
;
陳安斌
;
林文源
;
張智宏
;
鍾奇維
本發明係揭露一種互動式數位相框裝置,特別適用於老年人及孩童使用,有關數位相框裝置之複數功能選項內容,係藉由一遠端管理單元透過網路通訊介面設定。數位相框的側邊具有防滑之握持部,可防止滑落及提高操作上的便利性。數位相框上設有顯示模組及操作介面,操作介面具有作為上下鍵之第一控制鍵及作為左右鍵之第二控制鍵,利用第一控制鍵輪播出現每一功能選項於顯示模組中,並利用第二控制鍵輪播對應功能選項之資料,讓使用者簡單快速選擇功能選項之選定。
高分子太陽能電池及其製作方法
(2011-04-16)
陳方中
;
簡上傑
一種高分子太陽能電池的製作方法如下所述。首先，提供一基板。接著，於基板上形成一第一導電層。然後，將一有機半導體主動層材料與一有機修飾材料溶入一有機溶劑中，以形成一混合物。之後，將混合物配置於第一導電層上。接著，移除有機溶劑，以使有機修飾材料與有機半導體主動層材料產生相分離，而形成一有機半導體主動層與一有機修飾層，其中有機半導體主動層位於有機修飾層與第一導電層之間。然後，於有機修飾層上形成一第二導電層。此自形成有機修飾層便能有效地修飾有機主動層和電極金屬之間的介面，進而提高有機太陽能電池效率以及元件操作穩定度。
可供製造高電遷性電晶體之結構、包含此結構的元件及其之製造方法
(2011-04-16)
張翼
;
吳雲驥
;
林岳欽
所揭示者為一種適合做為半導體元件之砷化鎵金氧半導體假型高電遷性電晶體(MOS-PHEMT)的結構，及一種製造此結構的方法。此MOS-PHEMT結構的特徵在於具有一層以原子層沉積方式形成的閘極介電質，且該閘極介電質是由以下任一種材料製成：Al2O3、HfO2、La2O3或ZrO2；使得包含此MOS-PHEMT結構的元件，例如高頻開關元件，具有較低的閘極漏電流、較少的直流電力損耗、較少的衰減損耗以及較佳的隔絕性質。
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
(2011-04-18)
Tang, Shih-Hsuan
;
Chang, Edward Yi
;
Hudait, Mantu
;
Maa, Jer-Shen
;
Liu, Chee-Wee
High-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 10(18)/cm(-3) in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580605]
Solvent Participation in a One-Pot Glycosylation Strategy (SPOG)
(2011-04-18)
Chao, Chin-Sheng
;
Yen, Yu-Fang
;
Hung, Wei-Cheng
;
Mong, Kwok-Kong Tony
;
應用化學系
Solvent participation in a one-pot glycosylation strategy (SPOG) was developed on the basis of the low concentration beta-selective glycosylation method. This strategy enables the production of a beta-glycosidic bond in a one-pot oligosaccharide synthesis without or with minimal use of any C-2 participating function.
Semiconductor device with group III-V channel and group IV source-drain and method for manufacturing the same
(2011-04-19)
Chang
;
Chun-Yen
The present invention is related to a semiconductor device with group III-V channel and group IV source-drain and a method for manufacturing the same. Particularly, the energy level density and doping concentration of group III-V materials are increased by the heteroepitaxy of group III-V and group IV materials and the structural design of elements. The method comprises: preparing a substrate; depositing a dummy gate material layer on the substrate and defining a dummy gate from the dummy gate material layer by photolithography; performing doping by self-aligned ion implantation using the dummy gate as a mask and performing activation at high temperature, so as to form source-drain; removing the dummy gate; forming a recess in the substrate between the source-drain pair by etching; forming a channel-containing stacked element in the recess by epitaxy; and forming a gate on the channel-containing stacked element.
High concentration suspended sediment measurements using time domain reflectometry
(2011-04-20)
Chung, Chih-Chung
;
Lin, Chih-Ping
;
土木工程學系
;
防災與水環境研究中心
;
Department of Civil Engineering
The existing methods of suspended sediment concentration (SSC) monitoring provide a measurement accuracy significantly influenced by the particle size of suspended sediments, function only under limited measurement range and are not cost effective for field maintenance as well as wide spatial coverage. The paper introduces an innovative SSC monitoring methodology based upon time domain reflectometry (TDR), especially emphasizing on optimum TDR measurement accuracy investigated theoretically and experimentally. Pertinent probe design, probe calibration, as well as data reduction procedures were proposed. Ultimately, the approach can achieve the measurement accuracy to adapt the derived hardware resolution and beyond. In addition, the performance evaluation was carried out considering possible influence factors including water salinity, sediment types and particle sizes, and leading cable lengths. TDR SSC measurements indicate insensitive to sediment particle sizes. After proper calibration, the measurements are also insensitive to water electrical conductivity and not affected by leading cable resistances. There are further advantages of the TDR method including high measurement range from 2 to at least 300 g L(-1), easy calibration, robustness, maintainability, and cost-effective multiplexing. (C) 2011 Elsevier B.V. All rights reserved.
交大e-News第092期
(2011-04-20)
Secretariat
;
國立交通大學秘書室
Thermal Decomposition of Ethanol. 4. Ab Initio Chemical Kinetics for Reactions of H Atoms with CH3CH2O and CH3CHOH Radicals
(2011-04-21)
Xu, Z. F.
;
Xu, Kun
;
Lin, M. C.
;
應用化學系
;
Department of Applied Chemistry
The potential energy surfaces of H-atom reactions with CH3CH2O and CH3CHOH, two major radicals in the decomposition and oxidation of ethanol, have been studied at the CCSD-(T)/6-311+G(3df,2p) level of theory with geometric optimization carried out at the BH&HLYP/6-311+G(3df,2p) level. The direct hydrogen abstraction channels and the indirect association/decomposition channels from the chemically activated ethanol molecule have been considered for both reactions. The rate constants for both reactions have been calculated at 100-3000 K and 10(-4) Torr to 10(3) atm Ar pressure by microcanonical VTST/RRKM theory with master equation solution for, all accessible product channels. The results show that the major product channel of the CH3CH2O + H reaction is CH3 + CH2OH under atmospheric pressure conditions. Only at high pressure and low temperature, the rate constant for CH3CH2OH formation by collisonal deactivation becomes dominant. For CH3CHOH + H, there are three major product channels; at high temperatures, CH3+CH2OH production predominates at low pressures (P < 100 Torr), while the formation of CH3CH2OH by collisional deactivation becomes competitive at high pressures and low temperatures (T < 500 K). At high temperatures, the direct hydrogen abstraction reaction producing CH2CHOH + H-2 becomes dominant. Rate constants for all accessible product channels in both systems have been predicted and tabulated for modeling applications. The predicted value for CH3CHOH H at 295 K and 1 Torr pressure agrees;closely with available experimental data. For practical modeling applications, the rate constants for the thermal unimolecular decomposition of ethanol giving key accessible products have been predicted; those for the two major product channels taking place by dehydration and C-C breaking agree closely with available literature data.
Thermal Decomposition of Ethanol. 4. Ab Initio Chemical Kinetics for Reactions of H Atoms with CH(3)CH(2)O and CH(3)CHOH Radicals
(2011-04-21)
Xu, Z. F.
;
Xu, Kun
;
Lin, M. C.
;
應用化學系
;
Department of Applied Chemistry
The potential energy surfaces of H-atom reactions with CH(3)CH(2)O and CH(3)CHOH, two major radicals in the decomposition and oxidation of ethanol, have been studied at the CCSD-(T)/6-311+G(3df,2p) level of theory with geometric optimization carried out at the BH&HLYP/6-311+G(3df,2p) level. The direct hydrogen abstraction channels and the indirect association/decomposition channels from the chemically activated ethanol molecule have been considered for both reactions. The rate constants for both reactions have been calculated at 100-3000 K and 10(-4) Torr to 10(3) atm Ar pressure by microcanonical VTST/RRKM theory with master equation solution for, all accessible product channels. The results show that the major product channel of the CH(3)CH(2)O + H reaction is CH(3) + CH(2)OH under atmospheric pressure conditions. Only at high pressure and low temperature, the rate constant for CH(3)CH(2)OH formation by collisonal deactivation becomes dominant. For CH(3)CHOH + H, there are three major product channels; at high temperatures, CH(3)+CH(2)OH production predominates at low pressures (P < 100 Torr), while the formation of CH(3)CH(2)OH by collisional deactivation becomes competitive at high pressures and low temperatures (T < 500 K). At high temperatures, the direct hydrogen abstraction reaction producing CH(2)CHOH + H(2) becomes dominant. Rate constants for all accessible product channels in both systems have been predicted and tabulated for modeling applications. The predicted value for CH(3)CHOH H at 295 K and 1 Torr pressure agrees;closely with available experimental data. For practical modeling applications, the rate constants for the thermal unimolecular decomposition of ethanol giving key accessible products have been predicted; those for the two major product channels taking place by dehydration and C-C breaking agree closely with available literature data.
NANOPARTICLE AND MAGNETIC RESONANCE IMAGING CONTRAST AGENT
(2011-04-21)
Wang, Yun-Ming
;
Chen, Ting-Jung
A nanoparticle contains a core including superparamagnetic nanoparticles and having an outer surface, and siloxanyl moieties covalently coupled to the outer surface of the core and having Formula (I):In formula (I): X1 and X2 independently represent methylene, ethylene or propylene; R represents an optionally substituted pyridyl group, or —S—R is a group derived from a targeting ligand containing —SH group and effective to bind specifically with a predetermined targeted cell in an object; n and m independently represent an integer ranging from 1 to 3; and p represents an integer ranging from 9 to 45. The nanoparticles are suitable for use as a magnetic resonance imaging contrast agent.
高電子移動度トランジスタの構造、その構造を含んだデバイス及びその製造方法
(2011-04-21)
張翼
;
▲呉▼ 雲驥
;
林岳欽
【課題】ＭＭＩＣのＳＰＤＴスイッチなど、半導体デバイスとして用いるのに適したＭＯＳ－ＰＨＥＭＴの構造及びその製造方法を開示する。【解決手段】ＭＯＳ－ＰＨＥＭＴ構造は、Ａｌ２Ｏ３、ＨｆＯ２、Ｌａ２Ｏ３及びＺｒＯ２からなる群から選ばれる材料からなるゲート誘電体層107を有することを特徴とし、これにより、このＭＯＳ－ＰＨＥＭＴの構造を含む、高周波スイッチデバイスなどの半導体構造が、直流電流の損失及び挿入損失の低下を防ぎ、隔絶性を向上させることができる。【選択図】図１Ｅ
Particle charger with sheath air flow for enhancing charging efficiency
(2011-04-21)
Tsai, Chuen-Jinn
;
Guan-Yu, Lin
;
Hui-Lin, Chen
A particle charger with sheath air flow for enhancing charging efficiency includes a housing and a discharge wire. The housing has a charging chamber for accommodating the discharge wire, a particle inlet, a sheath air inlet, an outlet and an accelerating channel. A clean sheath air is guided through the sheath air inlet into the charging chamber to surround charged particles, reducing deposition of charged particles on the inside wall of the housing. A relatively small annular gap of accelerating channel accelerates the charged particles to exit the particle charger, and therefore minimized the particle electrostatic loss due to depositing on the inner surface of the housing. Additionally, uncharged particles approach the discharge wire axially, and charged particles move away radially. It is helpful for the charged particles to diffuse rapidly and uniformly, thereby enhancing the charging efficiency.
Method for virtual bass synthesis
(2011-04-21)
Bai, Mingsian R.
;
Tseng, Wen-Liang
;
Lin, Wan-Chi
This invention relates to a method for virtual bass synthesis. The low frequency signal is attained by applying a low pass filter to the original. In order to reduce the operations, process of down sampling the low frequency signal, moving the low frequency signal to a series of harmonics whose frequencies are integral times as large as the frequency of low frequency signals, and then up sampling them are provided. By means of psycho-acoustic theory, the weights of harmonics are attained and applied to the harmonics. Finally the weighted harmonics are combined to produce the bass signal. As the result, the virtual bass effect which is almost the same as the low frequency of the original audio signal can be accomplished. Because the harmonic signals are high frequency ones, the virtual effect can be made in the panel speakers or ordinary low-end speakers.
OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
(2011-04-21)
CHANG, Edward Yi
;
KUO, Chien-I
;
CHANG, Chun-Yen
Heavily doped epitaxial SiGe material or epitaxial InxGa1-xAs are used to form the source and drain of III-V semiconductor device to apply stress to the channel of III-V semiconductor device. Therefore, the electron mobility can be increased.