Browsing by Issue Date, starting with "2012-09-11"

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Dual positive-feedbacks voltage controlled oscillator
(2012-09-11)
Huang Zue-Der
;
Wu Chung-Yu
A dual positive-feedbacks voltage controlled oscillator includes an oscillation circuit and a cross coupled pair circuit. The oscillation circuit includes a first transistor, a second transistor, an inductor and a plurality of capacitors. The gates of the first and second transistors are opposite to each other and coupled to two points of the inductor. The inductor and the capacitors are formed as a LC tank. The cross coupled pair circuit includes a third transistor and a fourth transistor. The gates of the third and fourth transistors are cross coupled to two points of the inductor. Thereby, the gate of the third transistor is coupled to the gate of the second transistor; the gate of the fourth transistor is coupled to the gate of the first transistor; the drain of the third transistor is coupled to the source of the first transistor; and the drain of the fourth transistor is coupled to the source of the second transistor.
入侵者偵測系統及方法
(2012-09-11)
宋開泰
;
林嘉豪
;
林志昇
;
楊舒涵
本發明為一結合無線感測網路與保全機器人之入侵者偵測系統。於環境中佈建之無線感測模組，可以多重感測型式偵測各節點附近是否有入侵者或異常狀況，並透過網狀無線網路傳送給保全監控中心及保全機器人。機器人具有在環境中自主運動的能力，在偵測到異狀或警報觸發時前往問題發生點察看，並透過無線網路即時將影像資訊傳送到保全人員及主人之行動裝置上，可以及時得知現場狀況，達到保全之功效。
Hollow sphere from amphiphilic chitosan derivatives and method of preparing amiphiphilic chitosan derivative complex for medical use
(2012-09-11)
Chen San-Yuan
;
Liu Kun-Ho
;
Liu Dean-Mo
A hollow sphere from amphiphilic chitosan derivatives and a method of preparing an amphiphilic chitosan derivative complex for medical use are disclosed, and the hollow sphere from amphiphilic chitosan derivatives comprises: chitosan derivatives represented by the following formula (I), which self-assemble and form a hollow sphere in a solvent;wherein, each R1 is independently hydrogen, C1˜C4 alkyl, C1˜C6 carboxyl, sulfate group, or phosphate group, each R2 is independently hydrogen, C1˜C12 alkyl, C1˜C6 carboxyl, or C2˜C12 acyl group, and m is an integer of 100-2000.
以介電泳為基礎的微流體系統
(2012-09-11)
范士岡
一種以介電泳為基礎的微流體系統，包括：一第一電極平板，其具有一第一基板及一電極層，電極層設置於第一基板的一側面；一第二電極平板，其具有一第二基板及多數個電極，該些電極設置於第二基板的一側面，並且與電極層相對，該些電極依據一微流道圖案排列；以及一分隔結構，其設置於第一電極平板與第二電極平板之間，使得第一電極平板與第二電極平板之間形成一空間。藉此，使用者可將微流體注入至空間中，然後對不同的電極施加電壓，即可驅動微流體往不同處流動。
利用斜向沈積形成之奈米結構薄膜及其方法
(2012-09-11)
張家華
;
楊勁生
;
邱清華
;
余沛慈
;
郭浩中
本發明提出了一種利用斜向沈積技術形成之透明導電氧化物奈米結構及其方法。該方法使用電子槍來蒸鍍靶材，其蒸鍍基板設置在多個可轉動傾斜的平板上，並具有氣體控制閥控制氣體的通入，及一加熱源控制腔體內溫度，並於蒸鍍後進行退火製程，以改善薄膜結構與光電性質。
Multilayer substrate having gallium nitride layer and method for forming the same
(2012-09-11)
Chang Edward Yi
;
Hsiao Yu-Lin
;
Lu Jung-Chi
The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.
升降壓式電源轉換器及其控制方法
(2012-09-11)
陳科宏
;
吳緯權
;
何心欣
一種升降壓式電源轉換器及其控制方法，其在該電源轉換器的輸入電壓接近輸出電壓時延長開關的切換週期並使用新的開關順序來改善切換損失及導通損失，並且考慮負載電流對責任週期的影響使其可在正確點切換模式，因此該輸出電壓不會因為改變模式而受影響。
STATIC RANDOM ACCESS MEMORY CELL AND METHOD OF OPERATING THE SAME
(2012-09-13)
Chiu Yi-Te
;
Chang Ming-Hung
;
Yang Hao-I
;
Hwang Wei
A static random access memory cell includes a latch unit. The latch unit includes a bi-inverting circuit and a switching circuit. The bi-inverting circuit has a first terminal and a second terminal. The switching circuit is electrically connected between the first terminal and the second terminal, wherein when the switching circuit is turned on, the switching circuit forms a feedback between the first terminal and the second terminal for latching the latch unit; and when the switching circuit is turned off, the feedback is removed to cause the SRAM cell to write a data bit to the latch unit.
THREE-DIMENSIONAL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE
(2012-09-13)
Chen Kuan-Neng
;
Chang Yao-Jen
A three-dimensional complementary metal oxide semiconductor device comprises a bottom wafer having a first-type strained MOS transistor; a top wafer stacked on the bottom wafer face to face or face to back, having a second-type strained MOS transistor arranged opposite to the first-type strained MOS transistor, and having a plurality of metal pads and a plurality of TSVs connected to the metal pads; and a hybrid bonding layer arranged between the bottom wafer and the top wafer, having metallic-bonding areas connecting the first-type and second-type MOS transistors to TSVs and a non-metallic bonding area filled in all space except the metallic bonding areas, so as to bond the bottom and top wafers.
METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS
(2012-09-13)
Wu YewChung Sermon
;
Wang Bau-Ming
;
Hsiao Feng-Ching
The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
N-BIT DIGITAL-TO-ANALOG CONVERTING DEVICE
(2012-09-13)
Tseng Wei-Hsin
;
Wu Jieh-Tsorng
An N-bit digital-to-analog converting device includes: a decoder for converting an N-bit binary digital signal into a multi-bit thermometer code during each cycle of a clock signal alternating between first and second states, N being an integer not less than two; a random number generator for generating a reset signal having at least one high logic level bit and at least one low logic level bit that are equal in number and that have a random, time-varying arrangement; and a converting module coupled electrically to the decoder and the random number generator, and configured to convert the thermometer code into an analog voltage corresponding to the digital signal when the clock signal is in the first state, and to reset the analog voltage to a reset value according to the reset signal when the clock signal is in the second state.
柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ＬＥＤ）の発光効率を引き上げる方法
(2012-09-14)
黄泓文
;
盧廷昌
;
邱清華
;
郭浩中
;
王興宗
The partial solutions consideration based self-adaptive evolutionary algorithm: A learning structure of neuro-fuzzy networks
(2012-09-15)
Hung, Pei-Chia
;
Lin, Sheng-Fuu
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Evolutionary computation has become a popular research field due to its global searching ability. Therefore, it raises a challenge to develop an efficient and robustness evolutionary algorithm to not only reduce the evolution process but also increase the chances to meet the global solution. To this end, this study aims to provide a novel evolutionary algorithm named the partial solutions consideration based self-adaptive evolutionary algorithm (PSC-SEA) to address this issue; the proposed algorithm is applied to adjust the parameters of the neuro-fuzzy networks. More specifically, different from the existing evolution algorithms, the partial solutions consideration (PSC) tends to consider both the specializations and complementary relationships of the partial solutions from the complete solution to prevent converging to suboptimal solution. Moreover, a self-adaptive evolutionary algorithm (SEA) is proposed to dynamically adjust the searching space according to the performance. By doing so, the proposed evolutionary algorithm can consider the influence of partial solutions and provide a suitable searching space to increase the chances to meet the global solution. As shown in the results, the proposed evolutionary algorithm obtains better performance and smoother learning curves than other existing evolutionary algorithms. In other words, the proposed evolutionary algorithm can efficient tune the parameters of the neuro-fuzzy networks to meet the global solution. Base on the results, a framework is proposed to build a benchmark for developing the evolutionary algorithms that can not only consider the influence of partial solutions but also provide a suitable searching space. (C) 2012 Elsevier Ltd. All rights reserved.
Directed assembly of nano-scale phase variants in highly strained BiFeO3 thin films
(2012-09-15)
Zhou, Jian
;
Trassin, Morgan
;
He, Qing
;
Tamura, Nobumichi
;
Kunz, Martin
The delicate balance between elastic energy and electrostatic energy in highly strained BiFeO3 (BFO) thin films results in complex mixed-phase patterns, which poses significant challenges for theoretical understanding and complicates the realization of its full potential in magnetoelectric, electromechanical, and photovoltaic devices. In this letter, we explore in-plane electric field induced phase transition in strain engineered BFO thin films and elucidate the mechanism behind the assembly behavior of complex nano-scale phase domains. Our approach enables deterministic control of phase variants with well-defined structures and orientation, paving the way for designing novel data storage devices based on mixed phase BFO. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752395]
Design, synthesis, photophysical, and electrochemical properties of DCM-based conjugated polymers for light-emitting devices
(2012-09-15)
Vanjinathan, Mahalingam
;
Lin, Hong-Cheu
;
Nasar, A. Sultan
;
材料科學與工程學系
;
Department of Materials Science and Engineering
A series of conjugated hyperbranched polymers, hyperbranched copolymers, and linear polymers containing 2-pyran-4-ylidenemalononitrile (acceptor) and triphenylamine/fluorene (donor) units were synthesized and characterized by FTIR, 1H NMR, thermogravimetric analyses, differential scanning calorimetry, gel permeation chromatography, UVvisible, photoluminescence, and cyclic voltammetry measurements. All the polymers show red-light emission in the range of 566656 nm both in solution and in solid state. The quantum efficiency of the polymers was in the range of 5682%. Among the six polymers synthesized, only polymers containing fluorene units show Tg and polymers based on triphenylamine not exhibit Tg. The band gap of these polymers were found to be reasonably low; hyperbranched copolymer containing fluorene unit shows lowest band gap of 2.18 eV due to the stabilization of LUMO energy level by the electron withdrawing ?CN groups. The thermal and solubility behavior of the polymers were found to be good. All the EL spectra of the devices (indium-tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/polymer/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline/tris(8-hydroxyquinoline)aluminum)/LiF/Al) show red-light emission, and the device fabricated with P3 and P4 shows maximum luminance and luminous efficiency of 4104 cd m-2 and 0.55 cd angstrom-1 and 3696 cd m-2 and 0.47 cd angstrom-1, respectively, indicates that they had the best carrier balance. (c) 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012
Reallocating multiple inputs and outputs of units to improve overall performance
(2012-09-15)
Liu, Fuh-Hwa Franklin
;
Tsai, Ling-Chuan
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
All decision-making units (DMUs) in the private or public sector are provided with a set of inputs of different values by their governing decision maker (GDM), and are required to generate a set of outputs. The GDM is able to reallocate the inputs/outputs among the DMUs to estimate the maximum absolute decision making efficiency of the sector. Serial models are presented to manage the interaction between two decision-making levels, GDM and DMUs, to provide the reallocated targets of inputs/outputs for DMUs in the next operating period. The 25 branches of a commercial bank in Taiwan are used as an illustration. (c) 2012 Elsevier Inc. All rights reserved.
生化物質感測器及其製造方法
(2012-09-16)
冉曉雯
;
蔡娟娟
;
孟心飛
;
葉雋正
;
戴銘志
本發明係揭露一種生化物質感測器及其製造方法，而生化物質感測器係包含一基板、一閘極、一閘極絕緣層、一主動層、一源/汲極及一生化物質感測層。其中，閘極係設於基板之一面，閘極絕緣層係設於閘極背對基板之一面，主動層係設於閘極絕緣層背對閘極之一面，源/汲極係設於主動層背對閘極絕緣層之一面，而生化物質感測層則設於主動層背對閘極絕緣層之一面，並位於源/汲極之間。
三維互補式金屬氧化物半導體元件
(2012-09-16)
陳冠能
;
張耀仁
本發明提供一種三維互補式金屬氧化物半導體元件,其包含有一底部晶圓,其上形成含有一應力製程的第一型金屬氧化物半導體(MOS);一採面對面或背對面堆疊於底部晶圓上方之頂部晶圓,其上形成一含有應力製程且正對第一型MOS的第二型MOS與數個金屬襯墊,頂部晶圓內形成有數個連接至金屬襯墊的TSV;以及一混合式接合層,其位於底部晶圓與頂部晶圓間且包含有金屬接合區與非金屬接合區,金屬接合區是用以電性連接第一與第二型MOS至TSV,非金屬接合區是填充於金屬接合區外的剩餘空間,以接合底部晶圓與頂部晶圓。
用於次臨界／近臨界動態電壓與頻率調節系統之可程式化時脈產生器
(2012-09-16)
謝忠穎
;
張銘宏
;
黃威
一種可程式化時脈產生器,係適用於次臨界/近臨界之動態電壓與頻率調節系統,其包含:第一脈衝產生單元以及脈衝乘法器。第一計數單元係產生第一計數訊號,以控制相位偵測單元比較第一脈衝訊號與第二脈衝訊號之相位差,控制單元係根據相位差訊號以傳送第一控制訊號,並控制鎖相延遲單元調整第二脈衝訊號之相位,以使第二脈衝訊號與第一脈衝訊號相差一預定相位,藉此,可程式化時脈產生器可補償在低壓狀況下,關於製程、電壓以及溫度之變異,使得可程式化時脈產生器在低壓下仍可產生預期的頻率。
靜態隨機存取記憶體胞元及其操作方法
(2012-09-16)
邱議德
;
張銘宏
;
楊皓義
;
黃威
一種靜態隨機存取記憶體胞元包括一閂鎖單元。該閂鎖單元包括一雙反相電路和一開關電路。該雙反相電路具有一第一端和一第二端。該開關電路電連接在該第一端和該第二端之間,其中當該開關電路接通時,該開關電路在該第一端和該第二端之間形成一回授以閂鎖該閂鎖單元,且當該開關電路關斷時,解除該回授以使該靜態隨機存取記憶體胞元將一資料位元寫到該閂鎖單元。