Browsing by Issue Date, starting with "2013-02-15"

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Modeling neurogenesis impairment in down syndrome with induced pluripotent stem cells from Trisomy 21 amniotic fluid cells
(2013-02-15)
Lu, Huai-En
;
Yang, Yao-Chen
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Chen, Sheng-Mei
;
Su, Hong-Lin
;
Huang, Pai-Cheng
Down syndrome (DS), or Trisomy 21 (121) syndrome, one of the most common chromosomal abnormalities, is caused by an extra duplication of chromosome 21. In studies of neuron development, experimental models based on human cells are considered to be the most desired and accurate for basic research. The generation of diseased induced pluripotetn stem (iPS) cell is a critical step in understanding the developmental stages of complex neuronal diseases. Here, we generated human DS iPS cell lines from second trimester amniotic fluid (AF) cells with 121 by co-expressing Yamanaka factors through lentiviral delivery and subsequently differentiated them into neuronal progenitor cells (NPCs) for further analyses. 121 AF-iPS cells were characterized for the expression of pluripotent markers and for their ability to differentiate into all three germ layers by forming embryoid bodies in vitro and teratomas in vivo. The 121 AF-iPS cells maintained their unique pattern of chromosomal karyotypes: three pairs of chromosome 21. The level of amyloid precursor protein was significantly increased in NPCs derived from 121 AF-iPS cells compared with NPCs from normal AF-iPS cells. The expression levels of miR-155 and miR-802 in 121 AF-iPS-NPCs were highly elevated in the presence of low expression of MeCP2. We observed that 121 iPS-NPCs generated fewer neurons compared with controls. 121 iPS-NPCs exhibit developmental defects during neurogenesis. Our findings suggest that 121 AF-iPS cells serve as a good source to further elucidate the impairment neurogenesis of DS and the onset of Alzheimer's disease. (C) 2012 Elsevier Inc. All rights reserved.
Development of Ultrafast Spectroscopy and Reaction Mechanisms Studied by the Observation of Ultrashort-Life Species and Transition States
(2013-02-15)
Kobayashi, Takayoshi
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電子物理學系
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Department of Electrophysics
Based on the results of the present study, it is concluded that the first process in the photophysical dynamics in bR is the deformation of retinal configuration which decays within 30 fs near the C=N bond in the protonated Schiff base. It is followed by C=C stretching and then torsional motion of several periods around the C-13=Q(4) bond.
Mode-locked Nd: GdVO4 laser with graphene oxide/polyvinyl alcohol composite material absorber as well as an output coupler
(2013-02-15)
Wang, YongGang
;
Chen, Houren
;
Hsieh, Wenfeng
;
Tsang, YuenHong
;
光電工程學系
Graphene oxide/polyvinyl alcohol (GO/PVA) composite material saturable absorbers were fabricated. Sandwich structured GO/PVA absorber was used as an absorber as well as an output coupler in mode-locked Nd: GdVO4 laser. The laser pulses with the duration of 12 ps, repetition rate of 120 MHz and the maximum average output power of 680 mW were produced. (C) 2012 Elsevier B.V. All rights reserved.
Efficient high-energy passively Q-switched Nd:YLF/Cr4+: YAG UV laser at 351 nm with pulsed pumping in a nearly hemispherical cavity
(2013-02-15)
Huang, Y. J.
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Tang, C. Y.
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Tzeng, Y. S.
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Su, K. W.
;
Chen, Y. F.
We originally utilize a nearly hemispherical cavity to accomplish the energy scale-up for a high-repetition-rate nanosecond pulsed pumped Nd:YLF laser passively Q-switched by the Cr4+:YAG saturable absorber. This compact laser is able to efficiently generate pulse energy as large as 1.38 mJ and pulse width as short as 5 ns under a pulse repetition rate of 100 Hz. Further employing the developed Nd: YLF laser to perform extracavity harmonic generations, the maximum pulse energies of 490 mu J at 527 nm and 360 mu J at 351 nm are achieved with the shortest pulse duration of 4 ns. (C) 2013 Optical Society of America
Using BCl3-Based Plasma to Modify Wet-Etching Pattern Sapphire Substrate for Improving the Growth of GaN-Based LEDs
(2013-02-15)
Lin, Bo-Wen
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Niu, Chen-Yi
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Hsieh, Cheng-Yu
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Wang, Bau-Ming
;
Hsu, Wen-Ching
Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.
Near-infrared properties of Rh-doped Bi12TiO20 crystals for photonic applications
(2013-02-15)
Marinova, Vera
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Liu, Ren Chung
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Lin, Shiuan Huei
;
Chen, Ming-Syuan
;
Lin, Yi Hsin
The effect of Rh doping in Bi12TiO20 (BTO) crystals on the photosensitivity and recording speed at 1064 nm is reported. Response time of 0.1 s is measured during real-time holographic recording without any preliminary treatments. Once the crystal is pre-excited with a green light, the detected response time becomes 0.02 s. A possibility to implement BTO:Rh crystal plate with liquid crystals into a hybrid organic/inorganic device is demonstrated, which opens perspectives for further near-infrared applications. (c) 2013 Optical Society of America
Hypochlorous Acid Turn-on Fluorescent Probe Based on Oxidation of Diphenyl Selenide
(2013-02-15)
Liu, Shi-Rong
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Wu, Shu-Pao
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應用化學系
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Department of Applied Chemistry
A BODIPY-based fluorescent probe, HCSe, has been successfully developed for the rapid detection of hypochlorous acid based on the specific HOCl-promoted oxidation of diphenyl selenide in response to the amount of HOCl. Confocal fluorescence microscopy imaging using RAW264.7 cells showed that the new probe HCSe could be used as an effective fluorescent probe for detecting HOCl in living cells.
Engineering Fungal Nonreducing Polyketide Synthase by Heterologous Expression and Domain Swapping
(2013-02-15)
Yeh, Hsu-Hua
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Chang, Shu-Lin
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Chiang, Yi-Ming
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Bruno, Kenneth S.
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Oakley, Berl R.
We reannotated the A. niger NR-PKS gene, e_gw1_19.204, and its downstream R domain gene, est_GWPlus_C_190476, as a single gene which we named dtbA. Heterologous expression of dtbA In A. nidulans demonstrated that DtbA protein produces two polyketides, 2,4-dihydroxy-3,5,6-trimethylbenzaldehyde (1) and 6-ethyl-2,4-dihydroxy-3,5-dimethylbenzaldehyde (2). Generation of DtbA Delta R+TE chimeric PKSs by swapping the DtbA R domain with the AusA (austinol biosynthesis) or ANID_06448 TE domain enabled the production of two metabolites with carboxylic acids replacing the corresponding aldehydes.
A case of rapid rock riverbed incision in a coseismic uplift reach and its implications
(2013-02-15)
Huang, Ming-Wan
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Pan, Yii-Wen
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Liao, Jyh-Jong
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土木工程學系
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Department of Civil Engineering
During the 1999 Chi-Chi earthquake (M-w = 7.6) in Taiwan, the coseismic displacement induced fault scarps and a pop-up structure in the Taan River. The fault scarps across the river experienced maximum vertical slip of 10 m, which disturbed the dynamic equilibrium of the fluvial system. As a result, rapid incision in the weak bedrock, with a maximum depth of 20 m, was activated within a decade after its armor layer was removed. This case provides an excellent opportunity for closely tracking and recording the progressive evolution of river morphology that is subjected to coseismic uplift. Based on multistaged orthophotographs and digital elevation model (DEM) data, the process of morphology evolution in the uplift reach was divided into four consecutive stages. Plucking is the dominant mechanism of bedrock erosion associated with channel incision and knickpoint migration. The astonishingly high rate of knickpoint retreat (KPR), as rapid as a few hundred meters per year, may be responsible for the rapid incision in the main channel. The reasons for the high rate of KPR are discussed in depth. The total length of the river affected by the coseismic uplift is 5 km: 1 km in the uplift reach and 4 km in the downstream reach. The downstream reach was affected by a reduction in sediment supply and increase in stream power. The KPR cut through the uplift reach within roughly a decade; further significant flooding in the future will mainly cause widening instead of deepening of the channel. (C) 2012 Elsevier B.V. All rights reserved.
具有環狀排列微生物載體之廢水處理方法與裝置
(2013-02-16)
黎德明
;
江明桂
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陳金得
;
宋耿全
;
林志高
一種廢水處理方法與裝置，是於一反應槽中設置多數環狀排列之載體供微生物附著生長，反應槽中可分成一上反應區、一通道區以及一下反應區，通道區是被這些載體所圍繞，而且連通上、下反應區，微生物包含有自營性脫硝菌，而可產生Anammox反應將廢水中之NH4 + 以及NO2 - 轉換成氮氣，從而達到去除水中總氮之目的；由於載體能夠避免過多微生物隨著放流水排出反應槽，而將微生物儘可能地保留於反應槽內部，故此一廢水處理方法與裝置具較佳之處理效率。
多濾紙ＰＭ１０－ＰＭ２．５採樣器
(2013-02-16)
蔡春進
;
劉俊男
一種多濾紙PM 10-PM 2.5採樣器，可同時進行四組PM 10微粒樣本以及四組PM 2.5微粒樣本的採集，採樣器是使用一PM 10慣性衝擊器作為入口，採樣氣流通過PM 10慣性衝擊器後是被一分歧管分成兩等分，一部分之氣流被導入四組PM 10濾紙匣之中，而一部分之氣流則是在通過一PM 2.5慣性衝擊器之後，再被導入四組PM 2.5濾紙匣；為確保氣流均均地通過這些濾紙匣，每一組濾紙匣後端都設置一流孔板，以便提高每一採樣通道之壓損，從而使每一採樣通道之流量接近相同。
延遲元件及數位控制振盪器
(2013-02-16)
李鎮宜
;
余建螢
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游佳融
一種延遲元件包含第一反相電晶體對、第二反相電晶體對以及複數個延遲單元。第一反相電晶體對用以接收輸入信號。第二反相電晶體對交錯耦接第一反相電晶體對，並由第一反相電晶體對交錯控制。延遲單元分別疊接於第一反相電晶體對之間以及第二反相電晶體對之間，用以提供連續之複數個信號傳遞延遲，其中輸入信號藉由第一反相電晶體對、第二反相電晶體對與延遲單元依序操作而延遲預設時間，以產生相對應預設時間之輸出信號。一種數位控制振盪器亦於此揭露。
腹式呼吸特徵萃取方法及使用此方法的腹式呼吸特徵萃取系統
(2013-02-16)
蕭子健
;
徐如欣
本發明揭露一種無需使用一腹式呼吸標準模型，且一受測者亦無需接受一學習程序，便可萃取出此受測者之腹式呼吸特徵的腹式呼吸特徵萃取方法。藉由運算出對應至其所讀取之腹式呼吸訊號的複數個內在模式函數的方式，本發明之腹式呼吸特徵萃取方法接續運算出各內在模式函數的一尤拉角函數及一瞬時頻率函數。隨後，這些瞬時頻率函數便依序與一預先設定之零點臨界值範圍互相比較，且依據比較所得之結果，本發明之腹式呼吸特徵萃取方法萃取出其中一個瞬時頻率函數作為一腹式呼吸特徵函數。如此，此受測者之腹式呼吸特徵被可被萃取出來。
移動預測方法
(2013-02-16)
林一平
;
皇甫建君
本發明係揭露一種移動預測方法，其係利用在複數基地台所涵蓋之複數相鄰之通訊細胞間移動與通訊之至少一通訊電話，於一預測時段內，對使用通訊電話之人口移動進行預測。首先，擷取在一天中，通訊電話於每一通訊細胞產生之一話務量，與通訊電話在通訊細胞交遞移動所產生之一交遞資訊。接著，計算話務量及交遞資訊，以得到一天內在不同之時段中，人口在通訊細胞間移動之移動機率，及人口在每一通訊細胞涵蓋之區域之一平均停駐時間。最後，依據求得之資料，預測在預測時段之時間終點時，人口出現在每一區域之一出現機率，進而達到人口移動預測。
電校式輻射計
(2013-02-16)
侯冠州
;
歐陽盟
;
邱俊誠
一種電校式熱輻射計，包含具有凹槽的基底、藉自基底延伸的支臂使片狀懸浮體對應位於凹槽上方的懸浮單元，及第一、二熱量測單元，其中，第一、二熱量測單元分別具有由熱敏材料且彼此相間隔地形成在懸浮體中的第一、二熱膜層，和二分別自第一、二熱膜層延伸並供電訊號輸入及輸出的第一、二電訊號臂，本發明藉自第一電訊號臂輸入已知電訊號令第一熱膜層相對第二熱膜層作為背景熱環境，即令第二熱膜層感受熱源溫度變化，並自第二電訊號臂傳輸的電訊號得知熱源溫度變化，藉此降低環境溫度造成的感測誤差，量得更精確的熱源絕對溫度變化。
時間至數位轉換器及數位控制時脈產生器及全數位時脈產生器
(2013-02-16)
許騰尹
;
廖原德
;
蘇楷書
一種全數位時脈產生器包括一數位控制時脈產生器和一處理單元。該數位控制時脈產生器響應一致能訊號和一數位訊號而產生一時脈訊號。該處理單元具有一頻率乘數和一參考訊號，該參考訊號具有一週期，該處理單元數位化該週期來產生一量化訊號，根據該量化訊號和該頻率乘數而產生該數位訊號，且根據該參考訊號、該時脈訊號和該頻率乘數而產生該致能訊號。
用於減緩介金屬化合物成長之方法
(2013-02-16)
陳智
;
杜經寧
;
蕭翔耀
本發明係有關於一種用於減緩介金屬化合物成長之方法，步驟包含：(i)製備一基板元件，包括在一基板上電鍍至少一金屬墊層，接著在該金屬墊層上電鍍至少一很薄的一薄銲料，進行適當的熱處理製程；(ii)在該基板元件上再鍍上適當厚度的銲料；其中，該薄銲料經過適當的熱處理後，會與金屬墊之金屬反應形成一薄的介金屬化合物，因此可以在之後的迴銲製程抑制介金屬化合物的生成速率之效果，藉以減緩微小接點銲料與金屬墊上的金屬反應變成介金屬化合物。一旦介金屬化合物成長速率能被減緩，錫晶鬚(Sn whisker)的成長也可以被抑制。
Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
(2013-02-18)
Tsai, Jyun-Yu
;
Chang, Ting-Chang
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Lo, Wen-Hung
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Chen, Ching-En
;
Ho, Szu-Han
This work finds a significant difference in degradation under hot carrier stress (HCS) due to additional hole injection in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. A comparison performed on degradation of input/output (I/O) and standard performance (SP) devices showed that performance degradation of the I/O device is worse than the SP device under HCS. For the SP device, both channel-electrons and hot holes can inject into gate dielectric, in which hole acts to diminish the stress field. However, I/O device shows only electron injection. The proposed model is confirmed by gate induced drain leakage current and simulation tool. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791676]
Walking assistive system
(2013-02-19)
Song Kai-Tai
;
Jiang Sin-Yi
;
Huang Ko-Tung
The present invention discloses a walking assistive system comprising a motion module, a current detecting module and a central control module. Each motion module includes omni-directional wheels, motors, shaft encoders and servo controllers. The omni-directional wheels are connected to and driven by the motors. The motors are connected to the shaft encoders, and the rotation speed values are generated corresponds to the rotation speed of the motors by the shaft coder. The servo controllers connected to the shaft encoders and the motors receive the rotation speed values and control the motors. The current detecting modules connected to the motors detect the current of the motors and generate current values correspondingly. The central control module connected to the motion control module and the current detecting module controls the platform compliant motion control modules according to the rotation speed values and the current values.
ESD protection circuitry with multi-finger SCRS
(2013-02-19)
Ker Ming-Dou
;
Lin Chun-Yu
;
Wang Chang-Tzu
Self-triggered Multi-finger SCRs used in ESD protection circuitry capable of turning on all SCR fingers of the multi-finger SCRs include a first source, a second source, N SCR units, (N−1) diodes, and N resistors. Each of the N SCR units includes a first node, a second node coupled to the second source, and a trigger node. An nth diode of the (N−1) diodes is coupled between a first node of an nth SCR unit and a trigger node of an (n+1)th SCR unit. An nth resistor is coupled between the first node of the nth SCR unit and the first source, wherein n and N are integers. The (N−1) diodes can be replaced by directly coupled the first node of the nth SCR unit to the trigger node of the (n+1)th SCR unit when a trigger pulse is applied at the trigger node of a first SCR unit.