Browsing by Issue Date, starting with "2014-09-22"

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交大e-News第171期
(2014-09-22)
Secretariat
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國立交通大學秘書室
Metal-Organic Frameworks for Regeneration of Degraded Liquid Crystals
(2014-09-22)
Lee, Wei
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Huang, Cheng-Ting
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Liao, Kun-Ting
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Hsu, Jy-Shan
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Lin, Chia-Her
This paper is concerned with the dramatic purification effect of porous metal-organic frameworks (MOFs) and regeneration of a degraded liquid crystal (LC) as leftover from a flat-panel production line. By soaking MOFs in the LC, the correlation between the recovery of electrical properties and the water-sorption capacity of MOFs is unambiguously revealed. Experimental evidence from the data of voltage-dependent capacitance, dielectric spectroscopy and voltage holding ratio strongly suggests that the primary contaminant in a LC leftover is moisture. This investigation paves the way for feasible recycling of deteriorated LC materials. The approach reported in this study can be applied to many fluids for purification and regeneration.
Resistive random access memory device and operating method thereof
(2014-09-23)
Liu Po-Tsun
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Hsu Ching-Hui
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Fan Yang-Shun
A resistive random access memory (RRAM) device and operating method are disclosed herein. The RRAM device includes at least one RRAM cell and a control circuit. The RRAM cell includes a bottom electrode, an amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) layer, a Ti layer and a top electrode. The a-IGZO layer is disposed on the bottom layer. The Ti layer is disposed on the a-IGZO layer. The top electrode is disposed on the Ti layer. The control circuit is configured to provide at least one electrical signal to the RRAM cell, so as to change the resistance value of the RRAM cell.
Area-efficiency delta modulator for quantizing an analog signal
(2014-09-23)
Wu Chun-Yu
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Lyu Yuan-Fu
The invention comprises sample-and-hold circuit and digital-to-analog converter into a differentially operational unit. In analog-to-digital conversion unit, on the premise of fixed or non-fixed quantization error, analog-to-digital converter dynamically adjusts number of bits solved or size of quantized step according to the magnitude of differential voltage between sampled input signal and previously quantized input signal, thus this invention can reduce the non-necessary power consumption from redundant code and overload of input signal. Differentially operational unit and analog-to-digital unit share the same capacitor array which has binary-weighted arrangement to reduce circuit complexity and area.
Giant Enhancement of Ferroelectric Retention in BiFeO3 Mixed-Phase Boundary
(2014-09-24)
Huang, Yen-Chin
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Liu, Yunya
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Lin, Yi-Tsu
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Liu, Heng-Jui
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He, Qing
A large enhancement of nanodomain retentionis shown in the mixed-phase region of a strained BiFeO3 epitaxial film. The superior ferroelectric retention is attributed to a lower elastic-energy density at the phase boundaries, which act as periodic pinning centers for the domain wall motion. This study delivers a new pathway of incorporating an elastic-energy term to assist ferroelectric retention.
Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors
(2014-09-24)
Zou, Xuming
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Wang, Jingli
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Chiu, Chung-Hua
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Wu, Yun
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Xiao, Xiangheng
Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 mu A/mu m) of any MoS2 transistor reported to date.
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
(2014-09-25)
LIU Po-Tsun
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TENG Li-Feng
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LO Yuan-Jou
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LEE Yao-Jen
A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps. Firstly, a gate is formed on a substrate. A gate insulating layer is then formed on the gate, and further an active layer is disposed on the gate insulating layer, wherein the active layer is composed of a microwave absorbing material. Source/drain is defined on the active layer to form the semiconductor device, and a microwave annealing process is finally performed thereon.
Human DExD/H RNA helicases: Emerging roles in stress survival regulation
(2014-09-25)
Shih, Jing-Wen
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Lee, Yan-Hwa Wu
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交大名義發表
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生物科技學系
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National Chiao Tung University
Environmental stresses threatening cell homeostasis trigger various cellular responses ranging from the activation of survival pathways to eliciting programmed cell death. Cellular stress response highly depends on the nature and level of the insult as well as the cell type. Notably, the interplay among all these responses will ultimately determine the fate of the stressed cell. Human DExD/H RNA helicases are ubiquitous molecular motors rearranging RNA secondary structure in an ATP-dependent fashion. These highly conserved enzymes participate in nearly all aspects of cellular process involving RNA metabolism. Although numerous functions of DExD/H RNA helicases are well documented, their importance in stress response is only just becoming evident. This review outlines our current knowledge on major mechanistic themes of human DExD/H RNA helicases in response to stressful stimuli, especially on emerging molecular models for the functional roles of these enzymes in the stress survival regulation. (C) 2014 The Authors. Published by Elsevier B.V.
Overview of emerging nonvolatile memory technologies
(2014-09-25)
Meena, Jagan Singh
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Sze, Simon Min
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Chand, Umesh
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Tseng, Tseung-Yuen
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電子工程學系及電子研究所
Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.
TFT-PIN ARRAY SUBSTRATE AND ASSEMBLY STRUCTURE FOR FLAT-PANEL X-RAY DETECTOR
(2014-09-25)
TANG PAO-YUN
;
HO SHU-LIN
;
YANG KEI-HSIUNG
A TFT-PIN array substrate and an assembly structure for a flat-panel x-ray detector are provided to overcome the problem that the conventional scintillator substrate and TFT-PIN array substrate are neither penetrated by UV-light nor assembled by UV curable LOCA. The metal layer of the PIN photodiode of the TFT-PIN array substrate is perforated to have at least one hole, whereby UV-light can pass through the TFT-PIN array substrate to cure UV curable LOCA. Therefore, UV curable LOCA can be used as an adhesive layer in the assembly structure of a scintillator substrate and a TFT-PIN array substrate to promote the detective quantum efficiency and image quality of a flat-panel X-Ray detector.
LINE-CONTACT DRY ELECTRODE
(2014-09-25)
CHAI YUN
A line-contact dry electrode comprises a conductive electrode base and at least one conductive contact member extending from the conductive electrode base. The conductive contact member includes a plurality of elastic conductive branches arranged intermittently to form a comb-like electrode able to comb and push away the testee's hair and contact the testee's skin.
腦力再進化　探究生命本質
(2014-09-28)
陳亞柔
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Department of Communication and Technology
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傳播與科技學系
女主角露西在台灣生活，卻無意間捲入黑道的毒品運送案。黑道將毒品強行縫入運毒者的腹中，露西卻在運送過程中，因意外使腹內毒品滲入體內，導致大腦急速開發......
童話轉型　公主不再被拯救
(2014-09-28)
陳怡均
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Department of Communication and Technology
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傳播與科技學系
童話故事，可反映一定程度的社會真實。而女性意識在各種兒童取向作品中的呈現，也隨著社會價值標準改變。
我是哪國人　移民認同困境
(2014-09-28)
林霈楨
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Department of Communication and Technology
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傳播與科技學系
「我到底是德國人？還是土耳人？」【歡迎來到德國】用孩子的視角看土耳其移民在德國面臨的身分認同困境，以幽默溫馨的風格闡述國際移工問題。
墓穴驚魂　身心靈的獨白
(2014-09-28)
顏晟宇
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Department of Communication and Technology
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傳播與科技學系
2014年暑假，電影【忐忑】以法國首都巴黎底下的地下墓穴為背景，帶領觀眾走入一個神祕未知的世界。
瘋微整　外貌就是資本
(2014-09-28)
陳思寧
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Department of Communication and Technology
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傳播與科技學系
探討現今微整現象，受到時代開放、韓國偶像崇拜等多重影響，過去現在整形觀念的改變，以及人們愛美心理。
柔聲與搖滾
(2014-09-28)
查爾灣.米吉
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Department of Communication and Technology
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傳播與科技學系
貓狗兒女　毛小孩當道
(2014-09-28)
吳建勳
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Department of Communication and Technology
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傳播與科技學系
近年來，人們以「毛小孩」稱呼別人飼養的寵物，飼主對寵物的愛，如愛戴自己的孩子，成為新風潮。
一人公益　萬人響應
(2014-09-28)
黃馨儀
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Department of Communication and Technology
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傳播與科技學系
社群媒體崛起，公益組織的經營方針也深受影響，藉由社群平台號召公益，創造一人公益，萬人響應的效益。
謝式電音　姐姐驚豔全台
(2014-09-28)
謝宜寧
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Department of Communication and Technology
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傳播與科技學系
台語電音女神謝金燕，二○一三年以跳針舞曲〈姐姐〉紅遍全台，成為台灣樂壇的流行象徵。